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1. product profile 1.1 general description 100 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2300 mhz to 2400 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (90 mhz typical) ? designed for broadband operation (2300 mhz to 2400 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier a pplications in the 2300 mhz to 2400 mhz frequency range blf8g24ls-100v; BLF8G24LS-100GV power ldmos transistor rev. 2 ? 28 february 2014 objective data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2300 to 2400 900 28 25 18 30 ? 30 [1]
blf8g24ls-100v_24ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 2 ? 28 february 2014 2 of 17 nxp semiconductors blf8g24ls-100(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf8g24ls-100v (sot1244b) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . BLF8G24LS-100GV (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . d d d d d d table 3. ordering information type number package name description version blf8g24ls-100v - earless flanged ceramic package; 6 leads sot1244b BLF8G24LS-100GV - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c blf8g24ls-100v_24ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 2 ? 28 february 2014 3 of 17 nxp semiconductors blf8g24ls-100(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g24ls-100v and BLF8G24LS-100GV are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28 v; i dq =900ma; p l = 100 w; f = 2300 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 48 w 0.29 k/w table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 153 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 900 ma 1.6 2 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -29-a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d =153ma - 1.27 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =5.35a -0.1- ? table 7. rf characteristics test signal: 2-carrier w-cdma; 3gpp test model 1; 64 dpch; par = 7.2 db at 0.01 % probability on the ccdf; f 1 = 2302.5 mhz; f 2 = 2307.5 mhz; f 3 = 2392.5 mhz; f 4 = 2397.5 mhz; rf performance at v ds =28v; i dq = 900 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 25 w blf8g24ls-100v_24ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 2 ? 28 february 2014 4 of 17 nxp semiconductors blf8g24ls-100(g)v power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . table 8. typical impedance measured load-pull data; i dq = 900 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) blf8g24ls-100v 2300 1.52 ? j4.32 1.96 ? j2.21 2400 2.54 ? j5.05 1.83 ? j2.03 2500 4.83 ? j5.28 1.76 ? j2.23 BLF8G24LS-100GV 2300 1.60 ? j5.88 1.96 ? j4.12 2400 2.53 ? j6.66 1.81 ? j4.12 2500 4.53 ? j7.28 1.74 ? j4.33 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h blf8g24ls-100v_24ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 2 ? 28 february 2014 5 of 17 nxp semiconductors blf8g24ls-100(g)v power ldmos transistor 7.3 vbw in a class-ab operation the blf8g24ls-100v shows 90 mhz (typic al) video bandwidth (imd third-order intermodulation inflection point) in a class-ab test circuit in the 2.3 ghz to 2.4 ghz band at v ds = 28 v and i dq =0.9a. v ds = 28 v; i dq = 900 ma; f c = 2350 mhz. (1) low (2) high fig 2. vbw capacity in class-ab test circuit d d d f d u u l h u v s d f l q j 0 + ] , 0 ' , 0 ' , 0 ' g % f g % f g % f , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' , 0 ' blf8g24ls-100v_24ls-100gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 2 ? 28 february 2014 6 of 17 nxp semiconductors blf8g24ls-100(g)v power ldmos transistor 7.4 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] murata or capacitor of same quality. printed-circuit board (pcb): rogers 4350b with a thickness of 0.76 mm. see ta b l e 9 for a list of components. fig 3. component layout table 9. list of components see figure 3 for component layout. component description value remarks c1 multilayer ceramic chip capacitor 1.0 pf [1] atc 800b c2 multilayer cerami c chip capacitor 1 ? f [2] murata c3 multilayer ceramic chip capacitor 100 nf [2] murata c4, c5, c9, c12 multilayer ce ramic chip capacitor 24 pf [1] atc 800b c6, c11 multilayer ceramic chip capacitor 220 nf [2] murata c7, c10, c13, c14 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v [2] murata c8 electrolytic capacitor > 470 ? f, 6 3 v r1 chip resistor 4.7 ? , 1%tolerance smd 0805 t1 transistor - nxp blf8g24ls-100v d d d & |