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? 2004-2016 microchip technology inc. ds20001889f-page 1 mcp111/112 features ? ultra-low supply current: 1.75 a (max.) ? precision monito ring options of: - 1.90v, 2.32v, 2.63v, 2.90v, 2.93v, 3.08v, 4.38v and 4.63v ? resets microcontroller in a power-loss event ? active-low v out pin: - mcp111 active-low, open-drain - mcp112 active-low, push-pull ? available in sot23-3, to-92, sc-70 and sot-89-3 packages ? temperature range: - extended: -40c to +125c ( except mcp1xx-195 ) - industrial: -40c to +85c ( mcp1xx-195 only ) ? pb-free devices applications ? critical microcontrol ler and microprocessor power-monitoring applications ? computers ? intelligent instruments ? portable battery-powered equipment general description the mcp111/112 are voltage-detecting devices designed to keep a microcontroller in reset until the system voltage has stabilized at the appropriate level for reliable system operat ion. these devices also operate as protection from brown-out conditions when the system supply voltage drops below the specified threshold voltage level. eight different trip voltages are available. package types block diagram 3-pin sot23-3/sc-70 v dd v out mcp111/112 1 2 3 v ss v ss v out 3-pin to-92 v dd 1 3 2 v dd v ss v out 3-pin sot-89 v dd mcp111/112 v dd comparator + ? output driver v out band gap reference v ss device features device output reset delay (typ.) sot-23/sc70 package pin out (pin # 1, 2, 3) comment type pull-up resistor mcp111 open-drain external no v out , v ss , v dd mcp112 push-pull no no v out , v ss , v dd mcp102 push-pull no 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds20001906) mcp103 push-pull no 120 ms v ss , rst , v dd see mcp102/103/121/131 data sheet (ds20001906) mcp121 open-drain external 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds20001906) mcp131 open-drain internal (~95 k ? ) 120 ms rst , v dd , v ss see mcp102/103/121/131 data sheet (ds20001906) micropower voltage detector
mcp111/112 ds20001889f-page 2 ? 2004-2016 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings? v dd ...................................................................................7.0v input current (v dd ) .......................................................10 ma output current (rst ) ....................................................10 ma rated rise time of v dd .............................................100v/s all inputs and outputs (except rst ) w.r.t. v ss .............................................................. -0.6v to (v dd + 1.0v) rst output w.r.t. v ss ....................................... -0.6v to 13.5v storage temperature .....................................65c to + 150c ambient temp. with power applied ...............-40c to + 125c maximum junction temp. with power applied ............... 150c esd protection on all pins ???????????????????????????????????????????????????? 2kv ? notice: stresses above those listed under ?maximum ratings? may cause permanent dam age to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? (only mcp111 ), t a = -40c to +125c. parameters symbol min. typ. max. units conditions operating voltage range v dd 1.0 ? 5.5 v specified v dd value to v out low v dd 1.0 ? v i rst = 10 a, v rst < 0.2v operating current i dd ? < 1 1.75 a v dd trip point mcp1xx-195 v trip 1.872 1.900 1.929 v t a = +25c ( note 1 ) 1.853 1.900 1.948 v t a = -40c to +85c ( note 2 ) mcp1xx-240 2.285 2.320 2.355 v t a = +25c ( note 1 ) 2.262 2.320 2.378 v note 2 mcp1xx-270 2.591 2.630 2.670 v t a = +25c ( note 1 ) 2.564 2.630 2.696 v note 2 mcp1xx-290 2.857 2.900 2.944 v t a = +25c ( note 1 ) 2.828 2.900 2.973 v note 2 mcp1xx-300 2.886 2.930 2.974 v t a = +25c ( note 1 ) 2.857 2.930 3.003 v note 2 mcp1xx-315 3.034 3.080 3.126 v t a = +25c ( note 1 ) 3.003 3.080 3.157 v note 2 mcp1xx-450 4.314 4.380 4.446 v t a = +25c ( note 1 ) 4.271 4.380 4.490 v note 2 mcp1xx-475 4.561 4.630 4.700 v t a = +25c ( note 1 ) 4.514 4.630 4.746 v note 2 v dd trip point tempco t tpco ? 100 ? ppm/ c note 1: trip point is 1.5% from typical value. 2: trip point is 2.5% from typical value. 3: this specification allows th is device to be used in pic ? microcontroller applic ations that require the in-circuit serial programming? (icsp?) feature (see device-specific prog ramming specifications for voltage requirements). this specification does not allow a c ontinuous high voltage to be present on the open-drain output pin (v out ). the total time that the v out pin can be above the maximum device operational vo ltage (5.5v) is 100 sec. current into the v out pin should be limited to 2 ma. it is recommended that th e device operational temperature be maintained between 0c to 70c (+25c preferred). for additional information, please refer to figure 2-28 . 4: this parameter is established by characterization and is not 100% tested. ? 2004-2016 microchip technology inc. ds20001889f-page 3 mcp111/112 threshold hysteresis ? min. = 1%, max = 6%) mcp1xx-195 v hys 0.019 ? 0.114 v t a = +25c mcp1xx-240 0.023 ? 0.139 v mcp1xx-270 0.026 ? 0.158 v mcp1xx-290 0.029 ? 0.174 v mcp1xx-300 0.029 ? 0.176 v mcp1xx-315 0.031 ? 0.185 v mcp1xx-450 0.044 ? 0.263 v mcp1xx-475 0.046 ? 0.278 v v out low-level output voltage v ol ??0.4vi ol = 500 a, v dd = v trip(min) v out high-level output voltage v oh v dd ? 0.6 ? ? v i oh = 1 ma, for only mcp112 (push-pull output) open-drain high voltage on output v odh ? ? 13.5 (3) v mcp111 only, v dd = 3.0v, time voltage > 5.5v applied ? 100s, current into pin limited to 2 ma, +25c operation recommended note 3 , note 4 open-drain output leakage current ( mcp111 only) i od ?0.1?a dc characteristics (continued) electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? (only mcp111 ), t a = -40c to +125c. parameters symbol min. typ. max. units conditions note 1: trip point is 1.5% from typical value. 2: trip point is 2.5% from typical value. 3: this specification allows th is device to be used in pic ? microcontroller applic ations that require the in-circuit serial programming? (icsp?) feature (see device-specific prog ramming specifications for voltage requirements). this specification does not allow a continuous high vo ltage to be present on the open-drain output pin (v out ). the total time that the v out pin can be above the maximum device operational vo ltage (5.5v) is 100 sec. current into the v out pin should be limited to 2 ma. it is recommended that th e device operational temperature be maintained between 0c to 70c (+25c preferred). for additional information, please refer to figure 2-28 . 4: this parameter is established by characterization and is not 100% tested. mcp111/112 ds20001889f-page 4 ? 2004-2016 microchip technology inc. figure 1-1: timing diagram. ac characteristics electrical specifications: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? (only mcp111 ), t a = -40c to +125c. parameters symbol min. typ. max. units conditions v dd detect to v out inactive t rpu ?90 ? s figure 1-1 and c l = 50 pf ( note 1 ) v dd detect to v out active t rpd ?130 ? s v dd ramped from v trip(max) + 250 mv down to v trip(min) ? 250 mv, per figure 1-1 , c l = 50 pf ( note 1 ) v out rise time after v out active t rt ?5 ? s for v out 10% to 90% of final value per figure 1-1 , c l = 50 pf ( note 1 ) note 1: these parameters are for design guidance only and are not 100% tested. temperature characteristics electrical specifications: unless otherwise noted, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? ( mcp111 only), t a = -40c to +125c. parameters symbol min. typ. max. units conditions temperature ranges specified temperature range t a -40 ? +85 c mcp1xx-195 specified temperature range t a -40 ? +125 c except mcp1xx-195 maximum junction temperature t j ? ? +150 c storage temperature range t a -65 ? +150 c package thermal resistances thermal resistance, 3l-sot23 ? ja ?336 ?c/w thermal resistance, 3l-sc-70 ? ja ?340 ?c/w thermal resistance, 3l-to-92 ? ja ? 131.9 ? c/w thermal resistance, 3l-sot-89 ? ja ?110 ?c/w 1v 1v v trip v dd v out t rpu v oh t rt t rpd v ol ? 2004-2016 microchip technology inc. ds20001889f-page 5 mcp111/112 2.0 typical performance curves note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? (only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-1: i dd vs. temperature ( mcp111-195 ). figure 2-2: i dd vs. temperature ( mcp112-300 ). figure 2-3: i dd vs. temperature ( mcp112-475 ). figure 2-4: i dd vs. v dd ( mcp111-195 ). figure 2-5: i dd vs. v dd ( mcp112-300 ). figure 2-6: i dd vs. v dd ( mcp112-475 ). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or ta bles, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v 5.5v mcp111-195 0 0.2 0.4 0.6 0.8 1 1.2 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v mcp112-300 5.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -40 -20 0 20 40 60 80 100 120 140 temperature (c) i dd (ua) 1.7v 1.0v 2.1v 2.8v 4.0v 5.0v 5.5v mcp112-475 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i dd (ua) -40c +25c +85c +125c mcp111-195 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.02.03.04.05.06.0 v dd (v) i dd (ua) mcp112-300 -40c +25c +85c +125c 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i dd (ua) mcp112-475 -40c +25c +85c +125c mcp111/112 ds20001889f-page 6 ? 2004-2016 microchip technology inc. note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? (only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-7: v trip and v hyst vs. temperature ( mcp111-195 ). figure 2-8: v trip and v hyst vs. temperature ( mcp112-300 ). figure 2-9: v trip and v hyst vs. temperature ( mcp112-475 ). figure 2-10: v ol vs. i ol ( mcp111-195 @v dd = 1.7v). figure 2-11: v ol vs. i ol ( mcp112-300 @v dd = 2.7v). figure 2-12: v ol vs. i ol ( mcp112-475 @v dd = 4.4v). 1.895 1.900 1.905 1.910 1.915 1.920 1.925 1.930 1.935 1.940 1.945 1.950 -60 -10 40 90 140 temperature (c) v trip (v) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 hyst (v) v trip , v decreasing v trip , v increasing v hys , hysteresis mcp111-195 max temp is +85c 2.900 2.920 2.940 2.960 2.980 3.000 3.020 3.040 -60 -10 40 90 140 temperature (c) v trip (v) 0.082 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.098 0.100 hyst (v) mcp112-300 v trip , v decreasing v trip , v increasing v hys , hysteresis 4.580 4.600 4.620 4.640 4.660 4.680 4.700 4.720 4.740 4.760 4.780 4.800 -60 -20 20 60 100 140 temperature (c) v trip (v) 0.100 0.110 0.120 0.130 0.140 0.150 0.160 0.170 0.180 hyst (v) mcp112-475 v trip , v decreasing v trip , v increasing v hys , hysteresis 0.000 0.020 0.040 0.060 0.080 0.100 0.120 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) -40c +25c +85c +125c mcp111-195 v dd = 1.7v 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) mcp112-300 v dd = 2.7v -40c +25c +85c +125c 0.000 0.010 0.020 0.030 0.040 0.050 0.00 0.25 0.50 0.75 1.00 i ol (ma) v ol (v) mcp112-475 v dd = 4.4v -40c +25c +85c +125c ? 2004-2016 microchip technology inc. ds20001889f-page 7 mcp111/112 note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-13: v ol vs. temperature ( mcp111-195 @ v dd = 1.7v). figure 2-14: v ol vs. temperature ( mcp112-300 @ v dd = 2.7v). figure 2-15: v ol vs. temperature ( mcp112-475 @ v dd = 4.4v). figure 2-16: v oh vs. i oh ( mcp112-300 @ v dd = 3.1v). figure 2-17: v oh vs. i oh ( mcp112-475 @ v dd = 4.8v). figure 2-18: typical transient response (25 c). 0.000 0.020 0.040 0.060 0.080 0.100 0.120 -40 0 40 80 120 temperature (c) v ol (v) i ol = 0.00 ma mcp111-195 v dd = 1.7 v i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma 0.000 0.010 0.020 0.030 0.040 0.050 0.060 0.070 0.080 -40 0 40 80 120 temperature (c) v ol (v) mcp112-300 v dd = 2.7v i ol = 0.00 ma i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma 0.000 0.010 0.020 0.030 0.040 0.050 -40 0 40 80 120 temperature (c) v ol (v) i ol = 0.00 ma i ol = 0.25 ma i ol = 0.50 ma i ol = 0.75 ma i ol = 1.00 ma mcp112-475 v dd = 4.4v 2.900 2.950 3.000 3.050 3.100 3.150 0.00 0.25 0.50 0.75 1.00 i ol (ma) v oh (v) -40 c +25 c +85 c +125 c mcp112-300 v dd = 3.1v 4.680 4.700 4.720 4.740 4.760 4.780 4.800 4.820 0.00 0.25 0.50 0.75 1.00 i ol (ma) v oh (v) mcp112-475 v dd = 4.8v -40 c +25 c +85 c +125 c 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 v trip (min) - v dd transient duration (s) mcp111-195 mcp112-475 mcp112-300 mcp111/112 ds20001889f-page 8 ? 2004-2016 microchip technology inc. note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-19: t rpd vs. temperature ( mcp111-195 ). figure 2-20: t rpd vs. temperature ( mcp112-300 ). figure 2-21: t rpd vs. temperature ( mcp112-475 ). figure 2-22: t rpu vs. temperature ( mcp111-195 ). figure 2-23: t rpu vs. temperature ( mcp112-300 ). figure 2-24: t rpu vs. temperature ( mcp112-475 ). 0 50 100 150 200 250 300 350 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 1.7v v dd decreasing from: 5v - 0v mcp111-195 0 20 40 60 80 100 120 140 160 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 2.7v v dd decreasing from: 5v - 0v mcp112-300 0 50 100 150 200 250 -40 -15 10 35 60 85 110 temperature (c) t rpd (s) v dd decreasing from: v trip(max) + 0.25v to v trip(min) - 0.25v v dd decreasing from: 5v - 4.4v v dd decreasing from: 5v - 0v mcp112-475 0 50 100 150 200 250 300 350 400 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 2.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 2.8v v dd increasing from: 0v - 4.0v mcp111-195 0 20 40 60 80 100 120 140 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 3.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 3.3v v dd increasing from: 0v - 4.0v mcp112-300 0 50 100 150 200 250 -40 -15 10 35 60 85 110 temperature (c) t rpu (s) v dd increasing from: 0v - 4.9v v dd increasing from: 0v - 5.0v v dd increasing from: 0v - 5.5v mcp112-475 ? 2004-2016 microchip technology inc. ds20001889f-page 9 mcp111/112 note: unless otherwise indicated, all limits are specified for v dd = 1v to 5.5v, r pu = 100 k ? ( only mcp111 ; see figure 4-1 ), t a = -40c to +125c. figure 2-25: t rt vs. temperature ( mcp111-195 ). figure 2-26: t rt vs. temperature ( mcp112-300 ). figure 2-27: t rt vs. temperature ( mcp112-475 ). figure 2-28: open-drain leakage current vs. voltage applied to v out pin ( mcp111-195 ). 20 25 30 35 40 45 50 55 60 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 2.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 2.8v v dd increasing from: 0v - 4.0v mcp111-195 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 3.1v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 3.3v v dd increasing from: 0v - 4.0v mcp112-300 0.0800 0.0900 0.1000 0.1100 0.1200 0.1300 0.1400 0.1500 -40 -15 10 35 60 85 110 temperature (c) t rt (s) v dd increasing from: 0v - 4.8v v dd increasing from: 0v - 5.5v v dd increasing from: 0v - 4.9v v dd increasing from: 0v - 5.0v mcp112-475 1.e-13 1.e-12 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 01234567891011121314 pull-up voltage (v) open-drain leakage (a) 125c 25c - 40c 10m 100 1m 10 1 10n 100n 1n 100p 1p 10p 100f mcp111/112 ds20001889f-page 10 ? 2004-2016 microchip technology inc. 3.0 pin description the descriptions of the pins are listed in table 3-1 . table 3-1: pin function table pin number symbol function sot-23-3 sc-70 sot-89-3 t0-92 111v out output state v dd falling: h = v dd > v trip l = v dd < v trip v dd rising: h = v dd > v trip + v hys l = v dd < v trip + v hys 233v ss ground reference 322v dd positive power supply ?4?v dd positive power supply ? 2004-2016 microchip technology inc. ds20001889f-page 11 mcp111/112 4.0 application information for many of today?s microcontroller applications, care must be taken to prevent low-power conditions that can cause many different system problems. the most common causes is a brown-out condition, where the system supply drops below the operating level momen- tarily. the second most comm on cause is when a slowly decaying power supply caus es the microcontroller to begin executing instructions without sufficient voltage to sustain sram, thus producing indeterminate results. figure 4-1 shows a typical application circuit. figure 4-1: typical application circuit. 4.1 v trip operation the voltage trip point (v trip ) is determined on the falling edge of v dd . the actual voltage trip point (v tripac ) will be between the minimum trip point (v tripmin ) and the maximum trip point (v tripmax ). there is a hysteresis on this trip point to remove any ?jitter? that would occur on the v out pin when the device v dd is at the trip point. figure 4-2 shows the state of the v out pin as determined by the v dd voltage. the v trip specification is for falling v dd voltages. when the v dd voltage is rising, the v out pin will not be driven high until v dd is at v trip + v hys . figure 4-2: v out operation as determined by the v trip and v hys . 4.2 negative going v dd transients the minimum pulse width (time) required to cause a reset may be an important criteria in the implementa- tion of a power-on reset (por) circuit. this time is referred to as transient duration, defined as the amount of time needed for these supervisory devices to respond to a drop in v dd . the transient duration time is dependent on the magnitude of v trip ? v dd . generally speaking, the transient duration decreases with increases in v trip ? v dd . figure 4-3 shows a typical transient duration vs. reset comparator overdrive for which the mcp111/112 will not generate a reset pulse. it shows that the farther below the trip point the transient pulse goes, the duration of the pulse required to cause a reset gets shorter. figure 2-18 shows the transient response characteristics for the mcp111/112. a 0.1 f bypass capacitor, mounted as close as possible to the v dd pin, provides additional transient immunity (refer to figure 4-1 ). 2 mcp11x v dd v dd v dd v out mclr (reset input) v ss gnd pic ? microcontroller 3 1 r pu note 1: r pu may be required with the mcp111 due to the open-drain output. resistor r pu is not required with the mcp112. 0.1 f (1) v dd v tripmax v tripmin v tripac v tripac v tripac + v hysac v out 1v < 1 v is outside the device specifications mcp111/112 ds20001889f-page 12 ? 2004-2016 microchip technology inc. figure 4-3: example of typical transient duration waveform. 4.3 effect of temperature on time-out period (t rpu ) the time-out period (t rpu ) determines how long the device remains in the reset condition. this is affected by both v dd and temperature. the graph shown in figures 2-22 , 2-23 and 2-24 show the typical response for different v dd values and temperatures. 4.4 using in pic ? microcontroller icsp? applications (mcp111 only) figure 4-4 shows the typical application circuit for using the mcp111 for voltage supervisory function when the pic microcontroller will be programmed via the in-cir- cuit serial programming? (icsp) feature. additional information is available in tb087, ?using voltage supervisors with pic ? microcontroller systems which implement in-circuit serial programming?? , ds91087. figure 4-4: typical application circuit for pic ? microcontroller with the icsp? feature. time (s) 0v supply voltage 5v v trip(min) - v dd t trans v trip(max) v trip(min) note: it is recommended that the current into the rst pin be current limited by a 1 k ? resistor. v dd /v pp v dd mclr (reset input) (active-low) v ss pic ? mcu r pu 0.1 f 1k ? mcp111 v dd rst v ss ? 2004-2016 microchip technology inc. ds20001889f-page 13 mcp111/112 5.0 packaging information 5.1 package marking information 3-lead sot-23 3-lead to-92 example: device code mcp111t-195i/tt mpnn mcp111t-240ett mqnn mcp111t-270e/tt mgnn mcp111t-290e/tt nhnn mcp111t-300e/tt mjnn mcp111t-315e/tt mknn mcp111t-450e/tt mlnn mcp111t-475e/tt mmnn mcp112t-195i/tt mrnn mcp112t-240ett msnn mcp112t-270e/tt mann mcp112t-290e/tt mbnn mcp112t-300e/tt mcnn mcp112t-315e/tt mdnn mcp112t-450e/tt menn mcp112t-475e/tt mfnn example: legend: xx...x customer-specific information y year code (last digit of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e ywwnnn xxxxxx xxxxxx xxxxxx mcp111 240e to^^ 626256 3 e device code mcp111-240e/to 240e mcp111-270e/to 270e mcp111-290e/to 290e mcp111-300e/to 300e mcp111-315e/to 315e mcp111-450e/to 450e mcp111-475e/to 475e mcp111-195i/to 195i xxnn mp25 mcp111/112 ds20001889f-page 14 ? 2004-2016 microchip technology inc. package marking information (continued) 3-lead sc-70 example: device code mcp111t-195i/lb epnn mcp111t-240e/lb eqnn mcp111t-270e/lb egnn mcp111t-290e/lb ehnn mcp111t-300e/lb ejnn mcp111t-315e/lb eknn mcp111t-450e/lb elnn mcp111t-475e/lb emnn mcp112t-195i/lb ernn mcp112t-240e/lb esnn mcp112t-270e/lb eann mcp112t-290e/lb ebnn mcp112t-300e/lb ecnn mcp112t-315e/lb ednn mcp112t-450e/lb eenn mcp112t-475e/lb efnn 3-lead sot-89 example: ep25 nnn mp1626 256 device code mcp111t-195i/mb mp mcp111t-240emb mq mcp111t-270e/mb mg mcp111t-290e/mb nh mcp111t-300e/mb mj mcp111t-315e/mb mk mcp111t-450e/mb ml mcp111t-475e/mb mm mcp112t-195i/mb mr mcp112t-240emb ms mcp112t-270e/mb ma mcp112t-290e/mb mb mcp112t-300e/mb mc mcp112t-315e/mb md mcp112t-450e/mb me mcp112t-475e/mb mf ? 2004-2016 microchip technology inc. ds20001889f-page 15 mcp111/112 ! "# $ " # $ " # "% &' " !(& )*+ ) "%",# --" #"" . " "# "/ -0" 1/$" " " ""+22--- 2/ 3" 4*5! 6" 4 7 4#8 $1 4 9 1" &)* ) "" " 1/." & :& ;, < " ! & & ;, 6" 1/ # = & " "1 6 & > 6 / 6 < " 8 e a n 1 l b e c r d 1 2 3 - *) mcp111/112 ds20001889f-page 16 ? 2004-2016 microchip technology inc. ! "# $ " # $ " # "% & " !(& )*+ ) "%",# --" #"" . " "# "/ -0" 1/$" " " ""+22--- 2/ 3" 66! ! 6" 4 4; 7 4#8 $1 4 9 6 1" &)* ;#" 6 1" )* ;, 5" = > 1/ / & " $$ > ;, < " ! > : 1/< " ! : 9 ;, 6" : 9& . "6" 6 9 & : . " ? > ? 6 / = > 6 < " 8 9 > & b n e e1 2 1 e e1 d a a1 a2 c l - *) ? 2004-2016 microchip technology inc. ds20001889f-page 17 mcp111/112 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging mcp111/112 ds20001889f-page 18 ? 2004-2016 microchip technology inc. 0.15 c 0.15 c 0.10 c a b c seating plane 1 2 n 2x top view side view microchip technology drawing c04-060c sheet 1 of 2 2x for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: 3-lead plastic small outline transistor (lb) [sc70] d e e1 e e 3x b a a1 a2 0.30 c 3x tips end view c l b a ? 2004-2016 microchip technology inc. ds20001889f-page 19 mcp111/112 microchip technology drawing c04-060c sheet 2 of 2 number of pins overall height terminal width overall width terminal length exposed pad width molded package thickness pitch standoff units dimension limits a1 a b e1 a2 e l e n 0.65 bsc 0.10 0.15 0.80 0.00 - 0.20 1.25 bsc - - 2.10 bsc millimeters min nom 3 0.46 0.40 1.10 0.10 max c - 0.20 0.26 lead thickness 3-lead plastic small outline transistor (lb) [sc70] for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: overall length exposed pad length d d2 2.50 2.00 bsc 2.60 2.70 0.80 - 1.00 ref: reference dimension, usually without tolerance, for information purposes only. bsc: basic dimension. theoretically exact value shown without tolerances. notes: 1. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 0.15mm per side. 2. dimensioning and tolerancing per asme y14.5m mcp111/112 ds20001889f-page 20 ? 2004-2016 microchip technology inc. recommended land pattern microchip technology drawing no. c04-2060b 3-lead plastic small outline transistor (lb) [sc70] bsc: basic dimension. theoretically exact value shown without tolerances. notes: dimensioning and tolerancing per asme y14.5m 1. for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: dimension limits units c contact pad spacing contact pitch millimeters 0.65 bsc min e max 2.20 contact pad length contact pad width y x 0.85 0.50 nom distance between pads g 1.25 c e x y g silk screen 1 2 3 ? 2004-2016 microchip technology inc. ds20001889f-page 21 mcp111/112 % $ 0 l f u r f k l s 7 h f k q r o r j \ ' u d z l q j & |