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t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 1 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers product features ? frequency: dc to 6 ghz ? output power (p 3db ): 10 w at 3.3 ghz ? linear gain: >17 db at 3.3 ghz ? operating voltage: 28 v ? low thermal resistance package functional block diagram pin configuration pin no. label 1 v d / rf out 2 v g / rf in flange source general description the triquint t2g6000528-q3 is a 10w (p 3db ) discrete gan on sic hemt which operates from dc to 6 ghz. the device is constructed with triquint?s proven tqgan25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request. ordering information part eccn description t2g6000528-q3 ear99 packaged part flangeless t2g6000528-q3- evb3 ear99 3.0-3.5 ghz evaluation board t2g6000528-q3- evb5 ear99 3.8-4.2 ghz evaluation board t2g6000528-q3- evb6 ear99 5.8 ghz evaluation board t2g6000528-q3- evb1 ear99 1.9 ? 2.7 ghz evaluation board 2 1 2 1
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 2 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com absolute maximum ratings parameter value breakdown voltage (bv dg ) 100 v (min.) drain gate voltage (v dg ) 40 v gate voltage range (v g ) -10 to 0 v drain current (i d ) 2.5 a gate current (i g ) -2.5 to 7 ma power dissipation (p d ) 15 w rf input power, cw, t = 25c (p in ) 34 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 320 c storage temperature -40 to 150 c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation of th e device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 28 v (typ.) drain quiescent current (i dq ) 50 ma (typ.) peak drain current ( i d ) 650 ma (typ.) gate voltage (v g ) -3.0 v (typ.) channel temperature (t ch ) 225 c (max) power dissipation, cw (p d ) 11 w (max) power dissipation, pulse (p d ) 12.5 w (max) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommen ded operating conditions. rf characterization ? load pull performance at 6.0 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 50 ma symbol parameter min typical max units g lin linear gain 15.0 db p 3db output power at 3 db gain compression 9.3 w de 3db drain efficiency at 3 db gain compression 63.0 % pae 3db power-added efficiency at 3 db gain compression 59.0 % g 3db gain at 3 db compression 12.0 db notes: 1. v ds = 28 v, i dq = 50 ma; pulse: 100s, 20% rf characterization ? load pull performance at 3.0 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 50 ma symbol parameter min typical max units g lin linear gain 18.5 db p 3db output power at 3 db gain compression 9.2 w de 3db drain efficiency at 3 db gain compression 57.5 % pae 3db power-added efficiency at 3 db gain compression 55.9 % g 3db gain at 3 db compression 15.5 db notes: 1. v ds = 28 v, i dq = 50 ma; pulse: 100s, 20%
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 3 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com rf characterization ? performance at 3.3 ghz (1, 2) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 50 ma symbol parameter min typical max units g lin linear gain 15.5 17.4 db p 3db output power at 3 db gain compression 8.9 9.7 w de 3db drain efficiency at 3 db gain compression 50.0 53.0 % pae 3db power-added efficiency at 3 db gain compression 45.0 49.7 % g 3db gain at 3 db compression 12.5 14.4 db notes: 1. performance at 3.3 ghz in the 3.0 to 3.5 ghz eva luation board 2. v ds = 28 v, i dq = 50 ma; pulse: 100s, 20% rf characterization ? narrow band performance at 3. 50 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 28 v, i dq = 50 ma symbol parameter typical vswr impedance mismatch ruggedness 10:1 notes: 1. v ds = 28 v, i dq = 50 ma, cw at p 1db
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 4 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) dc at 85 c case 12.4 oc/w channel temperature (t ch ) 225 c notes: thermal resistance measured to bottom of package, c w. median lifetime maximum channel temperature t base = 85c, p d = 12.5 w 120.0 140.0 160.0 180.0 200.0 220.0 240.0 260.0 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 maximum channel temperature (oc) pulse width (sec) max. channel temperature vs. pulse width 5% duty cycle 10% duty cycle 25% duty cycle 50% duty cycle
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 5 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com load pull smith charts (1, 2) rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances p resented to the device via an rf circuit or load- pull system. the impedances listed follow an optimized trajectory to maintain h igh power and high efficiency. notes: 1. test conditions: v ds = 28 v, i dq = 50 ma 2. test signal: pulse width = 100 sec, duty cycle = 20%
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 6 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance performance is based on compromised impedance point and measured at dut reference plane. 33 34 35 36 37 38 39 16 17 18 19 20 21 22 23 24 33 34 35 36 37 38 39 0 10 20 30 40 50 60 70 80 33 34 35 36 37 38 39 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 1000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 9.14 + j14.83 z l = 29.07 + j5.48 33 34 35 36 37 38 39 40 16 17 18 19 20 21 22 23 24 33 34 35 36 37 38 39 40 0 10 20 30 40 50 60 70 80 33 34 35 36 37 38 39 40 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 2000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 3.21 + j6.81 z l = 22.54 + j6.93 31 32 33 34 35 36 37 38 39 40 41 12 13 14 15 16 17 18 19 20 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 3000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 4.86 - j1.97 z l = 19.81 + j11.00 31 32 33 34 35 36 37 38 39 40 41 10 11 12 13 14 15 16 17 18 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 4000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 6.35 - j10.23 z l = 17.38 + j9.39 31 32 33 34 35 36 37 38 39 40 41 10 11 12 13 14 15 16 17 18 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 5000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 9.03 - j11.85 z l = 10.57 + j2.84 31 32 33 34 35 36 37 38 39 40 41 10 11 12 13 14 15 16 17 18 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 31 32 33 34 35 36 37 38 39 40 41 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] dreff. & pae [%] t2g6000528-q3 gain dreff. and pae vs. pout 6000 mhz, 100 usec 20%, vds = 28v, idq = 50 ma gain dreff. pae z s = 11.46 - j17.67 z l = 13.23 - j3.01
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 7 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com performance over temperature (1, 2) performance measured in triquint?s 3.0 ghz to 3.5 g hz evaluation board at 3 db compression. notes: 1. test conditions: v ds = 28 v, i dq = 50 ma 2. test signal: pulse width = 100 s, duty cycle = 20%
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 8 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com bias-up procedure bias-down procedure 1. v g set to -5 v. 2. v d set to 28 v. 3. adjust v g more positive until quiescent i d is 50 ma. 4. apply rf signal. 1. turn off rf signal. 2. turn off v d and wait 1 second to allow drain capacitor dissipation. 3. turn off v g . evaluation board performance (1, 2) performance at 3 db compression notes: 1. test conditions: v ds = 28 v, i dq = 50 ma 2. test signal: pulse width = 100 s, duty cycle = 20 % application circuit
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 9 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com evaluation board layout top rf layer is 0.025? thick rogers ro3210, ? r = 10.2. the pad pattern shown has been developed a nd tested for optimized assembly at triquint semiconductor. the pcb land pa ttern has been developed to accommodate lead and pa ckage tolerances. bill of materials reference design value qty manufacturer part number c1, c7 22 uf 2 sprague t491d c2, c8 1 uf 2 kemet 1812c105kat2a c3, c9 0.1 uf 2 kemet c1206c104krac7800 c4, c10 0.01 uf 2 kemet c1206c103krac7800 c5, c11 100 pf 2 atc 100b101 c6, c12 2400 pf 2 dli c08bl242c5unc0b c13, c14 27 pf 2 atc 600l270jt200 r1 1000 ohm 1 vishay dale crcw0805100f100 r2 12 ohm 1 vishay dale rm73b2b120j l1, l2 9.85 nh 2 coilcraft 16069jlb
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 10 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com pin layout note: the t2g6000528-q3 will be marked with the ?05282? d esignator and a lot code marked below the part desi gnator. the ?yy? represents the last two digits of the calendar year the part was manufactured, the ?ww? is the work we ek of the assembly lot start, and the ?mxxx? is the production lot number. pin description pin symbol description 1 v d / rf out drain voltage / rf output matched to 50 ohms; see ev b layout on page 9 as an example. 2 v g / rf in gate voltage / rf input matched to 50 ohms; see evb layout on page 9 as an example. 3 flange source connected to ground; see evb layout on page 9 as an example. notes: thermal resistance measured to bottom of package
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 11 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com mechanical information all dimensions are in millimeters. unless specified otherwise, tolerances are 0.127. note: this package is lead-free/rohs-compliant. the plati ng material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (m aximum 245c reflow temperature) soldering processe s.
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 12 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: class 1a value: passes 250 v to < 500 v max. test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std- 020, lead free solder, 260 c rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 3 at +260 c convection reflow the part is rated moisture sensitivity level 3 at 260c p er jedec standard ipc/jedec j-std-020. eccn us department of commerce ear99 recommended soldering temperature profile
t2g6000528-q3 10w, 28v dc ? 6 ghz, gan rf power transistor datasheet: rev c 11-14-14 - 13 of 13 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com contact information for the latest specifications, additional product informat ion, worldwide sales and distribution locations, and informa tion about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information: email: info-products@triquint.com important notice the information contained herein is believed to be reliab le. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever fo r the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such info rmation is entirely with the user. all information contained herein is subject to change with out notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information containe d herein or any use of such information does not grant, explicitly or implicitly, to any party any paten t rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such informat ion. triquint products are not warranted or authorized fo r use as critical components in medical, life-saving, or li fe- sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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