unisonic technologies co., ltd 1n90 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-496.e 1 a mps, 900 volts n-channel power mosfet ? description the utc 1n90 is an n-channel mode power mosfet, using utc?s advanced technology to provide costomers planar stripe and dmos technology. this technology specializes in allowing a minimum on-state resistance, superior swit ching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 1n90 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) < 16 ? @ v gs =10v, i d = 0.5a * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol
1n90 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-496.e ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 1n90l-ta3-t 1n90g-ta3-t to-220 g d s tube 1n90l-tf3-t 1n90g-tf3-t to-220f g d s tube 1n90l-tf1-t 1n90g-tf1-t to-220f1 g d s tube 1n90l-tf2-t 1n90g-tf2-t to-220f2 g d s tube 1n90l-tf3-t 1n90g-tf3-t to-220f3 g d s tube 1n90l-tm3-t 1n90g-tm3-t to-251 g d s tube 1n90l-tms-t 1n90g-tms-t to-251s g d s tube 1N90L-TMS2-T 1n90g-tms2-t to-251s2 g d s tube 1n90l-tms4-t 1n90g-tms4-t to-251s4 g d s tube 1n90l-tn3-r 1n90g-tn3-r to-252 g d s tape reel 1n90l-tnd-r 1n90g-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking
1n90 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-496.e ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v drain current continuous i d 1.0 a pulsed (note 2) i dm 4.0 a avalanche current (note 2) i ar 1.0 a avalanche energy single pulsed (note 3) e as 90 mj repetitive (note 2) e ar 4.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-220 p d 40 w to-220f/to-220f1 to-220f3 23 w to-220f2 24 w to-251/to-251s to-251s2/to-251s4 to-252/to-252d 28 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature. 3. l=170mh, i as =1.0a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 1.0a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-220f/to-220f1 to-220f2/to-220f3 62.5 c/w to-251/to-251s to-251s2/to-251s4 to-252/to-252d 110 c/w junction to case to-220 jc 3.13 c/w to-220f/to-220f1 to-220f3 5.35 c/w to-220f2 5.3 c/w to-251/to-251s to-251s2/to-251s4 to-252/to-252d 4.53 c/w
1n90 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-496.e ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25c 1.0 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 a gate-source leakage current forward i gss v ds =0v ,v gs =30v 100 na reverse v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =0.5a 12 16 ? forward transconductance g fs v ds =50v, i d =0.5a (note 1) 0.75 s dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 200 250 pf output capacitance c oss 22 26 pf reverse transfer capacitance c rss 5 7 pf switching parameters turn-on delay time t d ( on ) v dd =30v, i d =1.0a, r g =25 ? (note 1,2) 37 45 ns turn-on rise time t r 10 40 ns turn-off delay time t d ( off ) 50 60 ns turn-off fall time t f 26 60 ns total gate charge q g v ds =120v, v gs =10v, i d =1.0a (note 1,2) 25 35 nc gate-source charge q gs 3 nc gate-drain charge q gd 4 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s 1.0 a maximum body-diode pulsed current i sm 4.0 a drain-source diode forward voltage v sd i s =1.0a, v gs =0v 1.4 v body diode reverse recovery time t rr v gs =0v, i s =1.0a, di f /dt=100a/ s (note 1) 300 ns body diode reverse recovery charge q rr 0.6 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature.
1n90 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-496.e ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
1n90 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-496.b ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
1n90 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-496.e ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 1 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 23 5 4 0 50 100 150 200 250 300 0 200 800 1000 1200 400 0 50 100 150 200 250 300 600 drain current, i d (a) body-diode continuous current, i s (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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