jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 5 - http://www.jjwdz.com acjt 1 series 1 a triac s rev. 3 .0 description: acjt1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. they are especially recommended for use on inductive load and serious electromagnetic interference place. main features symbol value unit i t( rms ) 1 a v drm /v rrm 1000 v i gt 5 or 10 ma absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage ( t j =25 ) v drm 100 0 v repetitive peak reverse voltage ( t j =25 ) v rrm 100 0 v non repetitive surge peak off - state voltage v dsm v drm +1 00 v non repetitive peak reverse voltage v rsm v r rm +1 00 v rms on - state current sot - 89/ sot - 223 (t c = 70 ) i t( rms ) 1 a to - 92 (t c = 57 ) non repetitive surge peak on - state current ( full cycle, f=50hz ) i tsm 1 0 a i 2 t value for fusing ( tp= 10 m s ) i 2 t 1.12 a 2 s rate of rise of on - state current ( i g = 2 i gt ) di t /dt 50 a/ s peak gate current i gm 1 a average gate power dissipation p g(av) 0. 2 w t1(1) g(3) t2(2) sot-89 sot-223 to-92 1 3 2 1 1 2 2 3 3
acjt 1 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 5 - http://www.jjwdz.com peak gate power p gm 1 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition quadrant value unit acjt105 acjt110 i gt v d =12v r l =33 - - max 5 10 ma v gt - - max 1. 4 1. 5 v v gd v d =v drm t j =125 r l = 3.3 k - - min 0.2 v i l i g = 1.2 i g t - max 15 25 ma 2 5 3 5 i h i t = 100m a max 10 2 0 ma dv/dt v d =2/3v drm gate ope n t j = 125 min 4 00 600 v / s static characteristics symbol parameter value(max) unit v tm i t m = 1.4 a tp= 380 s t j =25 1. 5 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j =1 25 0.5 ma thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 92 60 /w sot - 223 31 sot - 89 44
acjt 1 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 5 - http://www.jjwdz.com ordering information package mechanical data a c j t 1 0 5 - 1 0 u a c s w i t c h i t ( r m s ) : 1 a 0 5 : i g t 1 - 3 5 m a 1 0 : i g t 1 - 3 1 0 m a v : s o t - 2 2 3 u : t o - 9 2 n : s o t - 8 9 j i e j i e m i c r o e l e c t r o n i c s c o . , l t d t r i a c s 1 0 : v d r m / v r r m 1 0 0 0 v
acjt 1 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 5 - http://www.jjwdz.com package mechanical data k g b max 1.5mm h a f c n n e p v d j dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c d e f g h j k n p v 4.45 4.32 3.18 0.407 5.20 5.33 4.19 0.533 0.175 0.170 0.125 0.016 0.205 0.210 0.165 0.021 0.60 0.80 1.1 0.043 - 1.27 - 0.050 - - - 2.30 - 0.091 - - 0.36 0.50 0.014 0.020 15.0 12.70 0.500 0.591 2.04 2.66 0.080 0.105 1.86 2.06 0.073 0.081 4.3 0.169 - - 0.024 0.031 - - - - to-92 fig.3: surge peak on-state current versus number of cycles fig.1 maximum power dissipation versus rms on-state current fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) sot-89/ sot-223 p(w) 0 0.2 0.4 0.6 0.8 1.0 0 0.5 i t(rms) (a) tc ( ) 0 1.0 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 2 4 i tsm (a) i tm (a) v tm (v) 0 0.5 1.0 1.5 2.0 2.5 0 1.5 0.5 1.0 1.5 2.0 tj=25 0.5 1.5 6 8 10 12 14 tj=125 1.0 =180 t=20ms one cycle to-92
acjt 1 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 5 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangsu jiejie as sumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the third version which is made in 2 2 - june - 201 5 . this document supersedes and replaces all infor mation previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.6: relative variations of holding current, latching curretn versus junction temperature -40 -20 0 20 40 60 80 100 120 140 i h ,i l (tj) /i h ,i l (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 tj ( ) fig.5: relative variations of gate trigger current versus junction temperature -40 -20 0 20 40 60 80 100 120 140 i gt (tj) /i gt (tj=25 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i gt1 &i gt2 tj ( ) i h i l i gt3
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