sot223 npn silicon planar medium power darlington transistors issue 3 - october 1995 features * guaranteed h fe specified up to 2a * fast switching partmarking detail - device type in full complementary types - FZT604 - fzt704 fzt605 - fzt705 absolute maximum ratings. parameter symbol FZT604 fzt605 unit collector-base voltage v cbo 120 140 v collector-emitter voltage v ceo 100 120 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 1.5 a power dissipation p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. collector-base breakdown voltage FZT604 fzt605 v (br)cbo 120 140 v v i c =100 m a i c =100 m a collector-emitter breakdown voltage FZT604 fzt605 v (br)ceo 100 120 vi c =10ma* i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a collector cut-off current FZT604 i cbo 0.01 10 m a m a v cb =100v v cb =100v, t amb =100c fzt605 0.01 10 m a m a v cb =120v v cb =120v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =8v collector-emitter cut-off current FZT604 i ces 10 m a v ces =100v fzt605 10 m a v ces =120v collector-emittersaturation voltage v ce(sat) 1.0, 1.5 v v i c =250ma, i b =0.25ma* i c =1a, i b =1ma* base-emitter saturation voltage v be(sat) 1.8 v i c =1a, i b =1ma* base-emitter turn-on voltage v be(on) 1.7 v i c =1a, v ce =5v* static forward current transfer ratio h fe 2k 5k 2k 0.5k 100k i c =50ma, v ce =5v i c =500ma, v ce =5v* i c =1a, v ce =5v* i c =2a, v ce =5v* c c e b FZT604 fzt605 3 - 202
parameter symbol min. max. unit conditions transition frequency f t 150 mhz i c =100ma,v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =500mv, f=1mhz output capacitance c obo 15 typical pf v cb =10v, f=1mhz switching times t on 0.5 typical pf i c =500ma, v ce =10v i b1 = i b2 = 0.5ma t off 1.6 typical pf * measured under pulsed conditions. pulse width = 300 m s. duty cycle 2% spice parameter data is available upon request for these devices. FZT604 fzt605 FZT604 fzt605 3 - 203 3 - 204 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) 0 0.4 0.01 0.1 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c - collector current (amps) v - (v ol t s) 0.6 0.01 10 0.1 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h - ga i n n or m ali sed to 1 am p 0.001 0.01 10 0.1 1 0.5 1.0 1.5 2.0 2.5 v ce =5v i c - collector current (amps) v - (vol t s) 0.6 1.0 1.4 1.8 0.01 0.1 110 v ce =5v -55c +25c +100c 0.4 0.8 1.2 1.6 2.2 0.2 -55c +25c +100c +175c -55c +25c +100c +175c 0.4 -55c +25c +100c 2.2 2.0 v be(sat) v i c v be(on) v i c i c -collector current (a) FZT604 safe operating area v ce - collector emitter voltage (v) 1 0.1 10 100 1 0.01 1000 10 1s dc 100ms 10ms 100 m s 1ms i c -collector current (a) fzt605 safe operating area v ce - collector emitter voltage (v) 1000 1 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 10
parameter symbol min. max. unit conditions transition frequency f t 150 mhz i c =100ma,v ce =10v f=20mhz input capacitance c ibo 90 typical pf v eb =500mv, f=1mhz output capacitance c obo 15 typical pf v cb =10v, f=1mhz switching times t on 0.5 typical pf i c =500ma, v ce =10v i b1 = i b2 = 0.5ma t off 1.6 typical pf * measured under pulsed conditions. pulse width = 300 m s. duty cycle 2% spice parameter data is available upon request for these devices. FZT604 fzt605 FZT604 fzt605 3 - 203 3 - 204 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v olts) 0 0.4 0.01 0.1 10 1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i c - collector current (amps) v - (v ol t s) 0.6 0.01 10 0.1 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c /i b =100 i c /i b =100 i c - collector current (amps) h fe v i c h - ga i n n or m ali sed to 1 am p 0.001 0.01 10 0.1 1 0.5 1.0 1.5 2.0 2.5 v ce =5v i c - collector current (amps) v - (vol t s) 0.6 1.0 1.4 1.8 0.01 0.1 110 v ce =5v -55c +25c +100c 0.4 0.8 1.2 1.6 2.2 0.2 -55c +25c +100c +175c -55c +25c +100c +175c 0.4 -55c +25c +100c 2.2 2.0 v be(sat) v i c v be(on) v i c i c -collector current (a) FZT604 safe operating area v ce - collector emitter voltage (v) 1 0.1 10 100 1 0.01 1000 10 1s dc 100ms 10ms 100 m s 1ms i c -collector current (a) fzt605 safe operating area v ce - collector emitter voltage (v) 1000 1 0.1 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 10
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