single phase glass passivated bridge rectifiers voltage range - 1000 volts current - 1.6/2.0 ampere case : molded plastic body terminals : plated leads solderable per mil-std-750, method 2026 polarity : polarity symbols marked on case mounting position : any features mechanical data maximum ratings and electrical characteristics 1000 700 1000 1.6 2.0 ideal for printed circuit board reliable low cost construction utilizing molded plastic technique high temperature soldering guaranteed: 260 / 10 seconds at 5 lbs., (2.3kg) tension small size, simple installation high surge current capability ratings at 25 ambient temperature unless otherwise specified. single phase half-wave 60hz,resistive or inductive load, for capacitive load derate current by 20%. volts volts volts symbols units amps amps volts v rrm v rms v dc i f(av) i fsm maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current on glass-epoxy p.c.b.(note1) on aluminum substrate(note2) peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum instantaneous forward voltage drop per leg at 0.8a maximum dc reverse current t a =25 at rated dc blocking voltage t a =1 00 i r v f ua ua 0.95 60 5 1 0 0 ABS210 -55 to +150 -55 to +150 notes:1.on glass epoxy p.c.b. mounted on 0.05x0.05''(1.3x1.3mm) pads 2.on aluminum substrate p.c.b. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05x0.05''(1.3x1.3mm) solder pad operating temperature range storage temperature range t j t stg glass passivated chip junction dimensions in inches and (millimeters) abs ? ABS210 pb free plating product ABS210 pb 2.0 ampere surface mount miniature bridge rectifier ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 rev.05
ratings and characteristic curves ABS210 instantaneous forward current, (a) average forward rectified fig.2 forward derating curve ambient temperature, (c ) fig.4 peak forward surge current number of cycles at 60h z peak f orward surge current, fig.3 typical reverse characteristics percent of rated peak reverse voltage, % instantaneous reverse leakage fig.1 typical forward characteristics instantaneous forward voltage, ( v ) current, (a) current, ( a ) (a) resistive or inductive load 0 25 50 125 10075 150 0 0.50 0.10 1.50 2.0 glass epoxy p.c.b aluminum substrate 1.5 0.8 2.0 0.2 0.02 1.41.3 1.2 1.1 1.0 0.9 0.80.7 100000 12010080 4020 10000 1000 100 10 1.0 60 140 0 c t a =100 c t a =25 70 60 50 40 30 20 10 0 10 100 1 ? dk48n18 pb free plating product dk48n18 pb 70v,158a n-channel trench process power mosfet ? dk48n18 pb free plating product dk48n18 pb 70v,158a n-channel trench process power mosfet ? ABS210 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 rev.05
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