q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V bv dss = 600 v r ds(on) typ
i d = 7 a features absolute maximum ratings t c =25 e unless otherwise specified HCS60R750V 600v n-channel super junction mosfet symbol parameter value units v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 7* a drain current ? continuous (t c = 100 e ) 4.4* a i dm drain current ? pulsed (note 1) 21* a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 90 mj i ar avalanche current (note 1) 4a e ar repetitive avalanche energy (note 1) 0.5 mj p d power dissipation (t c = 25 e ) - derate above 25 e 32 w 0.26 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.9 e /w r ja junction-to-ambient -- 60.5 november 2014 1.gate 2. drain 3. source 2 1 3 to-220f * drain current limited by maximum junction temperature ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 14 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V electrical characteristics t c =25 q c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source-drain diode forward current -- -- 7 a i sm pulsed source-drain diode forward current -- -- 21 v sd source-drain diode forward voltage i s = 7 a, v gs = 0 v -- -- 1.2 v trr reverse recovery time i s = 7 a, v gs = 0 v di f /dt = 100 a/ v -- 300 -- qrr reverse recovery charge -- 2.4 -- & on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 3 v ds = 480 v, t c = 125 e -- -- 100 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 710 920 ? c oss output capacitance -- 200 260 ? c rss reverse transfer capacitance -- 3.5 4.6 ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 0.5 -- ? dynamic characteristics t d(on) turn-on time v ds = 300 v, i d = 7 a, r g = 25 ? -- 20 50 t r turn-on rise time -- 25 60 t d(off) turn-off delay time -- 60 130 t f turn-off fall time -- 25 60 q g total gate charge v ds = 480 v, i d = 7 a v gs = 10 v -- 14 18.5 nc q gs gate-source charge -- 4 -- nc q gd gate-drain charge -- 5 -- nc switching characteristics source-drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 3.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.4 a -- 0.67 0.75 ? g fs forward transconductance v ds = 10, i d = 4.4 a -- 5 -- s notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. i as =4a, v dd =50v, r g =25 : , starting t j =25 q c
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0
note : 1. v gs = 10 v 2. i d = 4.4 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] t 2 t 1 p dm 25 50 75 100 125 150 0 1 2 3 4 5 6 7 i d , drain current [a] t c , case temperature [ o c] 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 3.9 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]q?????qcabeq HCS60R750V package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g
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