b-66 01/99 U308, u309 n-channel silicon junction field-effect transistor mixers oscillators vhf/uhf amplifiers absolute maximum ratings at t a = 25?c. reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 20 ma continuous device power dissipation 500 mw power derating 4 mw/c toe52 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case surface mount smpj308/j309 at 25c free air temperature: U308 u309 process nj72 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v v gs = C 1a, v ds = ? v gate reverse current i gss C 150 C 150 pa v gs = C 15 v, v ds = ? v C 150 C 150 na v gs = C 15 v, v ds = ? v t a = +125c gate source cutoff voltage v gs(off) C 1C 6C 1C 4vv ds = 10 v, i d = 1 na gate source forward voltage v gs(f) 11vv ds = ? v, i g = 10 ma drain saturation current (pulsed) i dss 12 60 12 30 ma v ds = 10 v, v gs = ? v dynamic electrical characteristics common gate forward 10 17 10 17 ms v ds = 10 v, i d = 10 ma f = 1 khz g fs 15 15 ms v ds = 10 v, i d = 10 ma f = 105 mhz transconductance 14 14 ms v ds = 10 v, i d = 10 ma f = 450 mhz 250 250 s v ds = 10 v, i d = 10 ma f = 1 khz common gate output conductance g og 0.18 0.18 s v ds = 10 v, i d = 10 ma f = 105 mhz 0.32 0.32 s v ds = 10 v, i d = 10 ma f = 450 mhz drain gate capacitance c dg 2.5 2.5 pf v ds = 10 v, v gs = C 10 v f = 1 mhz gate source capacitance c gs 55pfv ds = 10 v, v gs = C 10 v f = 1 mhz equivalent short circuit e n 10 10 nv/ hz v ds = 10 v, i d = 10 ma f = 100 khz input noise voltage common gate power gain g pg 14 16 14 16 db v ds = 10 v, i d = 10 ma f = 105 mhz 10 11 10 11 db v ds = 10 v, i d = 10 ma f = 450 mhz noise figure nf 1.5 2 1.5 2 db v ds = 10 v, i d = 10 ma f = 105 mhz 2.7 3.5 2.7 3.5 db v ds = 10 v, i d = 10 ma f = 450 mhz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-66
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