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notes through are on page 8 symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 40 v v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 9.0 i d @ t a = 70c continuous drain current, v gs @ 10v 7.3 a i dm pulsed drain current 73 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0. 02 mw/c t j , t stg junction and storage temperature range -55 to + 150 c so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a
hexfet power mosfet v ds 40 v r ds(on) max (@v gs = 10v) 17 r ds(on) max (@v gs = 4.5v) 21 q g (typical) 15 nc i d (@t a = 25c) 9.0 a m features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 irf7469pbf-1 tape and reel 4000 irf7469trpbf-1 package type standard pack orderable part number irf7469pbf-1 so-8 base part number

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symbol parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? s v ds = 20v, i d = 7.2a q g total gate charge ??? 15 23 i d = 7.2a q gs gate-to-source charge ??? 7.0 11 nc v ds = 20v q gd gate-to-drain ("miller") charge ??? 5.0 8.0 v gs = 4.5v q oss output gate charge ??? 16 24 v gs = 0v, v ds = 16v t d(on) turn-on delay time ??? 11 ??? v dd = 20v t r rise time ??? 2.2 ??? i d = 7.2a t d(off) turn-off delay time ??? 14 ??? r g = 1.8 t f fall time ??? 3.5 ??? v gs = 4.5v c iss input capacitance ??? 2000 ??? v gs = 0v c oss output capacitance ??? 480 ??? v ds = 20v c rss reverse transfer capacitance ??? 28 ??? pf ? = 1.0mhz symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.80 1.3 v t j = 25c, i s = 7.2a, v gs = 0v ??? 0.65 ??? t j = 125c, i s = 7.2a, v gs = 0v t rr reverse recovery time ??? 47 71 ns t j = 25c, i f = 7.2a, v r =15v q rr reverse recovery charge ??? 91 140 nc di/dt = 100a/ s t rr reverse recovery time ??? 77 120 ns t j = 125c, i f = 7.2a, v r =20v q rr reverse recovery charge ??? 150 230 nc di/dt = 100a/ s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 210 mj i ar avalanche current ??? 7.2 a avalanche characteristics s d g diode characteristics 2.3 73 " v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.04 ??? v/c reference to 25c, i d = 1ma ??? 12 17 v gs = 10v, i d = 9.0a ??? 15.5 21 v gs = 4.5v, i d = 7.2a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250 a ??? ??? 20 a v ds = 32v, v gs = 0v ??? ??? 100 v ds = 32v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m

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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 10v 8.0v 7.0v 5.0v 4.5v 4.0v 3.7v 3.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.5v 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 10v 8.0v 7.0v 5.0v 4.5v 4.0v 3.7v 3.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.5v 10 100 3.5 4.0 4.5 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 9.0a

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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 7.2a v = 20v ds v = 32v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
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fig 10. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms $
1 0.1 % $ %& #$ + - $ 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d
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fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.2a 5.8a 7.2a 0 20406080 i d , drain current (a) 0.01 0.02 0.03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 9.0a
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 8.1mh, r g = 25 , i as = 7.2a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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