si pin photodiodes s10783 s10784 high-speed detectors with plastic package www.hamamatsu.com 1 the s10783 and s10784 are high-speed apc (auto power control) detectors developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. the s10783 is designed for surface mount and the s10784 is a plastic package with 3 mm lens. high-speed response 300 mhz typ. ( =650 nm, v r =2.5 v) 250 mhz typ. ( =780 nm, v r =2.5 v) high sensitivity s10783: 0.46 a/w typ. ( =650 nm) s10784: 0.45 a/w typ. ( =650 nm) laser diode monitors of optical disk unit (high-speed apc) sensors for red laser diode structure absolute maximum ratings parameter symbol s10783 s10784 unit photosensitive area size - 0.8 3.0 mm effective photosensitive area - 0.5 7.0 mm 2 package - surface mount type plastic plastic with lens - parameter symbol s10783 s10784 unit reverse voltage v r max 20 v power dissipation p 50 mw operating temperature topr -25 to +85 c storage temperature tstg -40 to +100 c note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum r atings. features applications this product does not support lead-free soldering. for details on re ow soldering conditions for surface-mount conponents, please contact our sales of ce.
si pin photodiodes s10783, s10784 electrical and optical characteristics (ta=25 c) parameter symbol condition s10783 s10784 unit min. typ. max. min. typ. max. spectral response range 330 to 1040 340 to 1040 nm peak sensitivity wavelength p - 760 - - 760 - nm photosensitivity s =660 nm 0.41 0.46 - 0.40 0.45 - a/w =780 nm 0.47 0.52 - 0.46 0.51 - dark current i d v r =2.5 v - 0.01 1.0 - 0.01 1.0 na temperature coef cient of i d t cid - 1.15 - - 1.15 - times/c cutoff frequency fc v r =2.5 v r l =50 =660 nm 150 300 - 150 300 - mhz =780 nm 125 250 - 125 250 - terminal capacitance ct v r =2.5 v, f=1 mhz - 4.5 9 - 4.5 9 pf noise equivalent power nep v r =2.5 v - 3.5 10 -15 -- 3.5 10 -15 - w/hz 1/2 2 0 0.1 0.2 0.3 0.4 200 400 600 800 1000 1200 wavelength (nm) photosensitivity (a/w) (typ. ta=25 c) 0.5 0.6 s10783 s10784 illuminance (lx) short circuit current 10 pa 100 pa 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 110 0.01 0.1 100 1000 1000 0 (typ. ta=25 c, v r =0 v, 2856 k) s10784 s10783 kpinb0355ea kpinb0396ea spectral response linearity
si pin photodiodes s10783, s10784 3 1 pf 0.1 1 10 100 reverse voltage (v) terminal capacitance (typ. ta=25 c, f=1 mhz) 10 pf kpinb0358ea terminal capacitance vs. reverse voltage -0.5 0 +0.5 400 600 800 1000 500 700 900 1100 (typ.) wavelength (nm) temperature coefficient (%/c) +1.0 10 -7 10 -16 -20 -10 0 10 20 30 ambient temperature (c) dark current (a) 40 50 60 70 80 10 -15 10 -14 10 -13 10 -12 10 -11 10 -10 10 -9 10 -8 (typ. v r =2.5 v) kpinb0357ea kpinb0363ea photosensitivity temperature characteristics dark current vs. ambient temperature kpinb0356ea 0.01 100 fa 1 na 100 pa 10 pa 1 pa 0.1 1 10 100 reverse voltage (v) dark current (typ. ta=25 c) dark current vs. reverse voltage
si pin photodiodes s10783, s10784 4 directivity frequency characteristics s10783 =660 nm s10784 =780 nm 90 80 70 60 50 30 relative sensitivity 40 20 10 0 10 20 90 80 70 60 50 30 40 (typ. ta=25 c) 80% 20% 40% 60% 100% 90 80 70 60 50 30 relative sensitivity 40 20 10 0 10 20 90 80 70 60 50 30 40 80% 20% 40% 60% (typ. ta=25 c) 100% kpinb0362ea kpinb0359ea -10 100 khz 1 mhz 10 mhz 1 ghz 100 mhz frequency relative output (db) (typ. ta=25 c, v r =2.5 v, r l =50 ) +5 0 -3 -5 -10 100 khz 1 mhz 10 mhz 1 ghz 100 mhz frequency relative output (db) (typ. ta=25 c, v r =2.5 v, r l =50 ) +5 0 -3 -5 kpinb0360ea kpinb0361ea
si pin photodiodes s10783, s10784 tolerance unless otherwise noted: 0.1 position accuracy of photosensitive area center with respect to the package dimensions marked * x, y?0.2 ??2 lead surface finish: silver plating standard packing: polyethylene pack [anti-static type] (500 pcs/pack) 6 8 4.2 max. (including burr) 3.8* 5.2 max. (including burr) 1.9 2.9 (1.3) (0.8) 4.8* 9.2 1.0 1.2 0.45 2.54 0.45 8 6 0.7 2.2 0.15 4.0 0.2 r1.5 lens 3.0 center of lens s10784 kpina0032ec 5 dimensional outlines (unit: mm) s10783 5.0 0.2 (including burr) 4.7* 10 4.8* 5 0.4 0.6 2.54 1.5 0.4 1.5 0.4 1.8 0.8 nc cathode anode cathode tolerance unless otherwise noted: 0.1 position accuracy of photosensitive area center with respect to the package dimensions marked * x, y ?0.2 ?2 lead surface finish: silver plating standard packing: stick (50 pcs/stick) 10 5 7.0 0.3 0.7 0.3 0.7 0.3 0.25 0.1 0.1 photosensitive surface 4.0* 4.1 0.2 (including burr) photosensitive area ( 0.8) kpina0105eb
cat. no. kpin1079e03 may 2013 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of may, 2013. si pin photodiodes s10783, s10784 6
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