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s mhop microelectronics c orp. a 8 80 c/w thermal characteristics c/w absolute maximum ratings ( t c =25 c unless otherwise noted ) thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja ver 1.0 www.samhop.com.tw apr,23,2010 1 STB458D green product d1/d2 s1 g1 s2 g2 d1/d2 dual enhancement mode field effect transistor (n and p chann el) n-ch p -ch g 1 d 1 s 1 g 2 d 2 s 2 product summary (n-channel) v dss i d r ds(on) (m ) max 40v 30a 14 @ vgs=4.5v 10.5 @ vgs=10v product summary (p-channel) v dss i d r ds(on) (m ) max -40v -24a 24 @ vgs=-4.5v 17 @ vgs=-10v symbolv ds v gs i dm e as w a p d c 15.6 -55 to 150 i d units parameter 40 30 68 vv 20 t c =25 c gate-source voltage drain-source voltage mj n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg t c =25 c -40 -24 -60 20 p-channel t c =70 c a 23.7 -19 10 w t c =70 c 210 170 stb series to-263 5l
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v 8.5 g fs 65 s v sd c iss 1500 pf c oss 250 pf c rss 170 pf q g 25 nc 30 nc q gs 65 nc q gd 40 t d(on) 25 ns t r 2.6 ns t d(off) 7 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delaytime v ds =20v,i d =15a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =15a v ds =10v , i d =15a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =13a 10.5 10.5 14 m ohm c f=1.0mhz c v ds =20v,i d =15a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =6a 0.8 1.3 v STB458D ver 1.0 www.samhop.com.tw apr,23,2010 2 1.9 nc 12.5 v ds =20v,i d =15a,v gs =4.5v n-channel electrical characteristics ( t c =25 c unless otherwise noted )
4 symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1 v 13.5 g fs 29 s v sd c iss 2480 pf c oss 350 pf c rss 260 pf q g 39 nc 70 nc q gs 320 nc q gd 120 t d(on) 61 ns t r 5 ns t d(off) 17 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-12a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-12a v ds =-10v , i d =-12a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-10a 17 18 24 m ohm c f=1.0mhz c v ds =-20v,i d =-12a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-5a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ STB458D www.samhop.com.tw apr,23,2010 3 nc v ds =-20v,i d =-12a,v gs =-4.5v 31 _ -1.6 ver 1.0
i d , drain current(a) i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage STB458D www.samhop.com.tw apr,23,2010 4 t j( c ) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current (a) figure 3. on-resistance vs. drain current and gate voltage tj, junction temperature ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temperature ver 1.0 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 3v v g s = 3.5 v v g s = 4 v v g s = 10 v n-channel v g s = 4.5v 35 28 21 14 7 0 0 0.7 4.2 3.5 2.8 2.1 1.4 t j=125 c 25 c -55 c 24 20 16 12 8 4 1 1 20 40 60 80 100 v g s =10v v g s =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =10v i d =15a v g s =4.5v i d =13a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua
STB458D ver 1.0 www.samhop.com.tw apr,23,2010 5 v gs , gate-source voltage (v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current v ds , drain-to source voltage (v) figure 9. capacitance qg, total gate charge (nc) figure 10. gate charge rg, gate resistance ( ) figure 11. switching characteristics v ds , gate-source voltage (v) figure 12. maximum safe operating area ciss coss crss 2400 2000 1600 1200 800 400 0 10 15 20 25 30 0 5 0.1 1 10 40 10 1 0.1 1000 100 v gs =10v single pulse t a =25 c 30 25 20 15 10 5 0 2 4 6 8 10 0 i d =15a 25 c 75 c 125 c 10 1 60 0 0.3 0.6 0.9 1.2 1.5 25 c 125 c 75 c 10 86 4 2 0 0 4 8 12 16 20 24 28 32 v ds =20v i d =15a 1 10 100 1 10 100 300 vds=20v,id=1a vgs=10v td(on) tr td(off ) tf r ds (o n) l i mit 1m s d c 1 0 0 us 1 0 us r ds(on) (m ) is, source-drain current(a) c, capacitance(pf) v gs , gate to source voltage(v) switching time(ns) i d , drain current(a)
t p v ( br )d ss i a s STB458D ver 1.0 www.samhop.com.tw apr,23,2010 6 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v normalized transient thermal resistance 21 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 d=0.5 0.1 0.01 s ingle p uls e 0.05 p dm t 1 t 2 1. r ? j a (t)=r (t) * r ? j a 2. r ? j a =s ee datas heet 3. t j m- t a = p dm * r ? j a (t) 4. duty c ycle, d=t 1 /t 2
STB458D www.samhop.com.tw apr,23,2010 7 t j( c ) -v ds , drain-to-source voltage(v) figure 1. output characteristics figure 2. transfer characteristics -i d , drain current (a) figure 3. on-resistance vs. drain current and gate voltage tj, junction temperature ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temperature 80 64 48 32 16 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = -4 v v g s = -3 .5v v g s = -4.5v v g s = -1 0 v 35 28 21 14 7 0 0 0.7 4.2 3.5 2.8 2.1 1.4 t j=125 c 25 c -55 c 36 30 24 18 12 6 1 v g s =-10v v g s =-4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v g s =-4.5v i d =-10a v g s =-10v i d =-12a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua ver 1.0 p-channel v g s = - 3v v g s = -5 v 1 16 32 48 64 80 v ds =v g s i d =-250ua -i d , drain current(a) -v gs , gate-to-source voltage(v) -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -vth, normalized gate-source threshold voltage -bvdss, normalized drain-source breakdown voltage
48 40 32 24 16 0 2 4 6 8 10 0 i d =-12a 8 25 c 75 c 125 c 10 15 20 25 30 3000 2500 2000 1500 1000 500 0 ciss coss crss STB458D ver 1.0 www.samhop.com.tw apr,23,2010 8 v gs , gate-source voltage (v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage (v) figure 8. body diode forward voltage variation with source current v ds , drain-to source voltage (v) figure 9. capacitance qg, total gate charge (nc) figure 10. gate charge rg, gate resistance ( ) figure 11. switching characteristics v ds , gate-source voltage (v) figure 12. maximum safe operating area 10 86 4 2 0 30 40 50 60 70 80 v ds =-20v i d =-12a 20 10 0 100 10 0.1 1 1 10 100 r ds (o n ) l i m i t 1 10 100 1 10 100 vds=-20v,id=-1a vgs=-10v td(on) td(off ) tf 6 60 10 1 60 0 0.3 0.6 1.2 0.9 1.5 125 c 25 c 75 c 0 5 1000 tr v g s =-10v s ingle p uls e t c=25 c 100u s 1ms 1 0ms d c 10 us r ds(on) (m ) -is, source-drain current(a) c, capacitance(pf) -v gs , gate to source voltage(v) switching time(ns) -i d , drain current(a)
t p v ( br )d ss i a s STB458D ver 1.0 www.samhop.com.tw apr,23,2010 9 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v normalized transient thermal resistance 21 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 d=0.5 0.1 0.01 s ingle p uls e 0.05 p dm t 1 t 2 1. r ? j a (t)=r (t) * r ? j a 2. r ? j a =s ee datas heet 3. t j m- t a = p dm * r ? j a (t) 4. duty c ycle, d=t 1 /t 2
STB458D ver 1.0 www.samhop.com.tw apr,23,2010 10 ?? ? ?? ?? ? e ? ? ? 4.40 0.66 0.00 0.36 1.50 r e f . 2.29 9.80 1.25 8.60 14.6 4.80 0.91 0.30 0.50 2.79 10.4 1.45 9.00 15.8 min max millimeters ref. a b l4 c l3 l1 e c2 l2 d e l 1.27 r e f . 1.70 r e f . dimensions 0 8
to-263 carrier tape STB458D www.samhop.com.tw apr,23,2010 11 to-263 tape data ver1.0 unit: @ symbol spec a0 b0 k0 10.80 16.13 5.21 p0 p1 p2 t 4.00 2 0.10 16.0 2 0.10 2.00 2 0.10 0.356 2 0.13 2 0.10 2 0.10 2 0.10 e f 24.0 +0.3 - 0.1 d1 1.50 2 0.25 w 1.75 2 0.10 11.50 2 0.10 1.55 2 0.05 d0 10p0 40.0 2 0.20

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