01/99 b-65 U290, u291 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 30 v continuous forward gate current 100 ma continuous device power dissipation 500 mw power derating 4 mw/c toe52 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case at 25c free air temperature: U290 u291 process nj1800d static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 30 C 30 v i g = C 1 a, v ds = ? v gate reverse current i gss C 1 C 1 na v gs = C 15 v, v ds = ? a C 1 C 1 a v gs = C 15 v, v ds = ? a t a = 150c gate source cutoff voltage v gs(off) C 4 C 10 C 1.5 C 4.5 v v ds = 15 v, i d = 3 na drain saturation current (pulsed) i dss 500 200 ma v ds = 10 v, v gs = ?v drain cutoff current i d(off) 11nav ds = 5 v, v gs = C 10 v 11av ds = 5 v, v gs = C 10 v t a = 150c drain source on voltage v ds(on) 30 70 mv v gs = ? v, i d = 10 ma static drain source on resistance r ds(on) 1327 v gs = ? v, i d = 10 ma dynamic electrical characteristics drain source on resistance r ds(on) 1327 v gs = ? v, i d = ? f = 1 khz drain gate off capacitance c dgo 30 30 pf v dg = 15 v, i s = ?v f = 1 mhz source gate off capacitance c sgo 30 30 pf v dg = 15 v, i s = ?v f = 1 mhz source gate plus drain gate c iss 160 160 pf v dg = ?v, v gs = ? v f = 1 mhz switching characteristics v dd = 1.5 v, i d(on) = 30 ma turn on delay time td (on) 15 15 ns r l = 50 rise time t r 20 20 ns v gs(on) = ?v turn off delay time td (off) 15 15 ns (U290) v gs(off) = C 12 v fall time t f 20 20 ns (u291) v gs(off) = C 7 v choppers low on resistance switches 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-65
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