Part Number Hot Search : 
AD7538AQ 500A1 ON2031 RM155 3LC46 1N4729 78MXX LH1549HB
Product Description
Full Text Search
 

To Download IRLML0100 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  11/24/09 IRLML0100trpbf hexfet   power mosfet pd - 97157 www.irf.com 1 ordering information:see detailed ordering and shipping information on the last page of this data sheet. notes   through  are on page 10 application(s) micro3 tm (sot-23) IRLML0100trpbf d s g 3 1 2 ? load/ system switch features and benefits features benefits industry-standard pinout multi-vendor compatibilit y compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1 increased reliability v ds 100 v v gs max 16 v r ds(on) max (@v gs = 10v) 220 m r ds(on) max (@v gs = 4.5v) 235 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient CCC 100 r ja junction-to-ambient (t<10s)  CCC 99 w c/w a max. 1.6 1.3 -55 to + 150 16 0.01 100 1.3 0.8 7.0 downloaded from: http:///

2 www.irf.com electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.10 CCC v/c CCC 190 235 CCC 178 220 v gs(th) gate threshold voltage 1.0 CCC 2.5 v i dss CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 r g internal gate resistance CCC 1.3 CCC gfs forward transconductance 5.7 CCC CCC s q g total gate charge CCC 2.5 CCC q gs gate-to-source charge CCC 0.5 CCC q gd gate-to-drain ("miller") charge CCC 1.2 CCC t d(on) turn-on delay time CCC 2.2 CCC t r rise time CCC 2.1 CCC t d(off) turn-off delay time CCC 9.0 CCC t f fall time CCC 3.6 CCC c iss input capacitance CCC 290 CCC c oss output capacitance CCC 27 CCC c rss reverse transfer capacitance CCC 13 CCC source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode)  v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 20 30 ns q rr reverse recovery charge CCC 13 20 nc CCC CCC CCC CCC pf a 1.1 7.0 v dd =50v  na nc ns v ds = v gs , i d = 25a v ds =100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c r ds(on) v gs = 10v, i d = 1.6a  static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 1.3a  mosfet symbol showing the v ds =50v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v  di/dt = 100a/s  v gs = 16v v gs = -16v t j = 25c, i s = 1.1a, v gs = 0v  integral reverse p-n junction diode. v ds = 50v, i d = 1.6a i d = 1.6a i d = 1.0a t j = 25c, v r = 50v, i f =1.1a downloaded from: http:///

www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 1.6a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v 60s p ulse width tj = 25c 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s p ulse width tj = 150c 2.25v vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v downloaded from: http:///

4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 01234567 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 1.6a 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///

www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit   
 1      0.1 %          + -   25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform 1k vcc dut 0 l s d g 20k vds vgs i d vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 v gs, gate -to -source voltage (v) 150 200 250 300 350 400 450 500 550 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 1.6a t j = 25c t j = 125c 0 2 4 6 8 i d , drain current (a) 170 190 210 230 250 270 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v vgs = 4.5v downloaded from: http:///

www.irf.com 7 fig 15. typical threshold voltage vs. junction temperature   typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25ua i d = 250ua 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w ) downloaded from: http:///

8 www.irf.com micro3 (sot-23/to-236ab) part marking information 
   
  
     
          
     e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 notes: b a1 3x a a2 abc m 0.20 [0.008] 0.10 [0.004] c c 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions doe s not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2  bsc  ref  
 
inches 8 0     
          0.0004 min max  
dimensions 0.972 1.900 recommended footprint 0.802 0.950 2.742 3x l c l2 h 4 l1 7 f = irlml6401 a 2001 a 27 notes : t his part marking information applies to devices p roduced after 02/26/2001 code lot w = we e k y = ye ar part number e = irlml6402 part number code ref ere nce : d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if precede d by las t digit of cale ndar year w = (27-52) if precede d by a let te r y8 2008 3 2003 1 2001 year 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 year y c 03 wor k we e k 0102 a wb 04 d 24 26 25 xz y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 2830 c bd 50 x 52 z note: a l i ne above the wor k week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = IRLML0100 n = irlml2060 downloaded from: http:///

www.irf.com 9  ?   
  
    2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.  
          
     downloaded from: http:///

10 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2009  qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability  higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/  applicable version of jedec standard at the time of product release.  
           
        repetitive rating; pulse width limited by max. junction temperature.    pulse width 400s; duty cycle 2%.    surface mounted on 1 in square cu board   refer to application note #an-994. ms l 1 (per ipc/je de c j-s t d-020d ??? ) rohs compliant yes micro3 qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines ) note form quantity IRLML0100trpbf micro3 tape and reel 3000 orderable part number package type standard pack downloaded from: http:///


▲Up To Search▲   

 
Price & Availability of IRLML0100

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X