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11/24/09 IRLML0100trpbf hexfet power mosfet pd - 97157 www.irf.com 1 ordering information:see detailed ordering and shipping information on the last page of this data sheet. notes through are on page 10 application(s) micro3 tm (sot-23) IRLML0100trpbf d s g 3 1 2 ? load/ system switch features and benefits features benefits industry-standard pinout multi-vendor compatibilit y compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1 increased reliability v ds 100 v v gs max 16 v r ds(on) max (@v gs = 10v) 220 m r ds(on) max (@v gs = 4.5v) 235 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient CCC 100 r ja junction-to-ambient (t<10s) CCC 99 w c/w a max. 1.6 1.3 -55 to + 150 16 0.01 100 1.3 0.8 7.0 downloaded from: http:///

2 www.irf.com electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.10 CCC v/c CCC 190 235 CCC 178 220 v gs(th) gate threshold voltage 1.0 CCC 2.5 v i dss CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 r g internal gate resistance CCC 1.3 CCC gfs forward transconductance 5.7 CCC CCC s q g total gate charge CCC 2.5 CCC q gs gate-to-source charge CCC 0.5 CCC q gd gate-to-drain ("miller") charge CCC 1.2 CCC t d(on) turn-on delay time CCC 2.2 CCC t r rise time CCC 2.1 CCC t d(off) turn-off delay time CCC 9.0 CCC t f fall time CCC 3.6 CCC c iss input capacitance CCC 290 CCC c oss output capacitance CCC 27 CCC c rss reverse transfer capacitance CCC 13 CCC source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 20 30 ns q rr reverse recovery charge CCC 13 20 nc CCC CCC CCC CCC pf a 1.1 7.0 v dd =50v na nc ns v ds = v gs , i d = 25a v ds =100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c r ds(on) v gs = 10v, i d = 1.6a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 1.3a mosfet symbol showing the v ds =50v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v di/dt = 100a/s v gs = 16v v gs = -16v t j = 25c, i s = 1.1a, v gs = 0v integral reverse p-n junction diode. v ds = 50v, i d = 1.6a i d = 1.6a i d = 1.0a t j = 25c, v r = 50v, i f =1.1a downloaded from: http:///

www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 1.6a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v 60s p ulse width tj = 25c 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s p ulse width tj = 150c 2.25v vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v downloaded from: http:///

4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 01234567 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 1.6a 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///

www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit
1 0.1 % + - 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform 1k vcc dut 0 l s d g 20k vds vgs i d vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 v gs, gate -to -source voltage (v) 150 200 250 300 350 400 450 500 550 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 1.6a t j = 25c t j = 125c 0 2 4 6 8 i d , drain current (a) 170 190 210 230 250 270 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v vgs = 4.5v downloaded from: http:///

www.irf.com 7 fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25ua i d = 250ua 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w ) downloaded from: http:///

8 www.irf.com micro3 (sot-23/to-236ab) part marking information

e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 notes: b a1 3x a a2 abc m 0.20 [0.008] 0.10 [0.004] c c 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions doe s not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2 bsc ref

inches 8 0
0.0004 min max
dimensions 0.972 1.900 recommended footprint 0.802 0.950 2.742 3x l c l2 h 4 l1 7 f = irlml6401 a 2001 a 27 notes : t his part marking information applies to devices p roduced after 02/26/2001 code lot w = we e k y = ye ar part number e = irlml6402 part number code ref ere nce : d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if precede d by las t digit of cale ndar year w = (27-52) if precede d by a let te r y8 2008 3 2003 1 2001 year 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 year y c 03 wor k we e k 0102 a wb 04 d 24 26 25 xz y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 2830 c bd 50 x 52 z note: a l i ne above the wor k week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = IRLML0100 n = irlml2060 downloaded from: http:///

www.irf.com 9 ?

2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

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10 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2009 qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. surface mounted on 1 in square cu board refer to application note #an-994. ms l 1 (per ipc/je de c j-s t d-020d ??? ) rohs compliant yes micro3 qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines ) note form quantity IRLML0100trpbf micro3 tape and reel 3000 orderable part number package type standard pack downloaded from: http:///

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