BSW67A; bsw68a npn switching transistors features ? high current (max. 1 a) ? high voltage (max. 150 v). applications ? general purpose switching and amplification ? industrial applications. description npn transistor in a to-39 metal package. pinning pin 1 2 3 description emitter base collector, connected to case fig.1 simplified outline (to-39) and symbol. quick reference data symbol vcbo vceo ic ptot hfe h toff parameter collector-base voltage bsw66a BSW67A bsw68a collector-emitter voltage bsw66a BSW67A bsw68a collector current (dc) total power dissipation dc current gain transition frequency turn-off time conditions open emitter open base tcase < 25 c lc = 10ma;vce = 5v lc = 500 ma; vce = 5 v lc = 100 ma; vce = 20 v; f = 100 mhz icon = 500 ma; lbon = 50 ma; lboff = -50 ma min. - - - - - - - - 30 30 - - typ. - - - - - - - - - - 130 900 max. 100 120 150 100 120 150 1 5 1 - - - - unit v v v v v v a w mhz ns nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn switching transistors limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic icm ibm plot tstg tj ' amb parameter collector-base voltage bsw66a BSW67A bsw68a collector-emitter voltage bsw66a BSW67A bsw68a emitter-base voltage collector current (dc) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature conditions open emitter open base open collector tp < 20 ms tamb < 25 c tcase ? 25 c min. - - - - - - - - - - - - -65 - -65 max. 100 120 150 100 120 150 6 1 2 200 800 5 +150 200 +150 unit v v v v v v v a a ma mw w c c c thermal characteristics symbol rth j-a rth j-c parameter thermal resistance from junction to ambient thermal resistance from junction to case conditions free air value 220 35 unit k/w k/w
npn switching transistors characteristics tj = 25 c unless otherwise specified. symbol icbo icbo icbo iebo hfe vcesat vbessi cc ce fl parameter collector cut-off current bsw66a collector cut-off current BSW67A collector cut-off current bsw68a emitter cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency conditions ie = 0; vcb = 50 v le = 0;vcb = 50v;tj = 150c ie = 0; vcb = 100v ie = 0; vcb = 60 v le = 0;vcb = 60v;tj = 150c ie = 0; vcb = 120v ie = 0; vcb = 75 v le = 0;vcb = 75v;tj = 150c ie = 0; vcb = 150v lc = 0; veb = 3 v ic = 0; veb = 6 v vce = 5 v lc=10ma lc = 100ma lc = 500 ma lc = 1 a lc = 100 ma; ib = 10 ma lc = 500 ma; ib = 50 ma lc = 1 a; ib = 150ma lc = 100ma; ib = 10ma lc = 500 ma; ib = 50 ma lc=1 a; ib = 150ma le = ie = 0;vcb=10v;f=1 mhz lc = ic = 0;veb = 0;f=1 mhz lc = 100 ma; vce = 20 v; f = 100 mhz min. _ - - - - - - - - 30 40 30 10 - - - - - - - - - typ. _ - - - - - - - - - - - - - - - - - 130 max. 100 50 100 100 50 100 100 50 100 100 100 - 150 400 1 900 1.1 1.4 20 300 - unit na ha ha na ha ha na ha ha na ha mv mv v mv v v pf pf mhz switching times (between 10% and 90% levels) ton toff turn-on time turn-off time icon - 500 ma; lbon = 50 ma; ifioff = -50 ma - - 500 900 - - ns ns
to-39 metal can package a -b- t o c 8 ?o 3 dim a b c d e f g h j k l min 8.50 7.74 6.09 0.40 ? 2.41 4.82 0.71 0.73 12.70 42 dec max 9.39 8.50 6.60 0.53 0.88 2,66 5.33 0.86 1.02 _ 48deg \, pin configuration 1. emitter 2. base 3. collector packing detail package to-39 standard pack details 500 pcs/polybaj net weight/qty inner carton box || outer carton box s2s 540 gm/500 pcs || 3" x 7.5" x 7.5" qty _|| size 20k || 17" x 15" x 13.5" qty 32k grwt 40kgs
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