april 2011 doc id 16863 rev 3 1/9 9 LET9060F rf power transistor from the ldmost family of n-channel enhancemen t-mode lateral mosfets features excellent thermal stability common source configuration p out (@ 28 v)= 60 w with 18 db gain @ 945 mhz p out (@ 36 v)= 90 w with 18 db gain @ 945 mhz beo free package in compliance with the 2002/95/ec european directive description the LET9060F is a common source n-channel enhancement-mode lateral field-effect rf power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 ghz. the LET9060F is designed for high gain and broadband performance operating in common source mode at 28 v. it is ideal for base station applications requiring high linearity. figure 1. pin out m250 epoxy sealed 1 3 2 1. dr a in 2. g a te 3 . s o u rce table 1. device summary order code package branding LET9060F m250 LET9060F www.st.com
maximum ratings LET9060F 2/9 doc id 16863 rev 3 1 maximum ratings table 2. absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 80 v v gs gate-source voltage -0.5 to +15 v i d drain current 12 a p diss power dissipation (@ t c = 70 c) 130 w t j max. operating junction temperature 200 c t stg storage temperature -65 to +150 c table 3. thermal data symbol parameter value unit r th(jc) junction-case thermal resistance 1.0 c/w
LET9060F electrical characteristics doc id 16863 rev 3 3/9 2 electrical characteristics t c = 25 c table 4. static symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v; i ds = 10 ma 80 v i dss v gs = 0 v; v ds = 28 v 1 a i gss v gs = 5 v; v ds = 0 v 1 a v gs(q) v ds = 28 v; i d = 100 ma 2.0 5.0 v v ds(on) v gs = 10 v; i d = 3 a 0.8 1.2 v g fs v ds = 10 v; i d = 3 a 2.5 mho c iss v gs = 0 v; v ds = 28 v; f = 1 mhz 77 pf c oss v gs = 0 v; v ds = 28 v; f = 1 mhz 39 pf c rss v gs = 0 v; v ds = 28 v; f = 1 mhz 1.2 pf table 5. dynamic symbol test conditions min. typ. max. unit p out v dd = 28 v; i dq = 400 ma; p in = 1.5 w; f = 945 mhz 60 75 - w g ps v dd = 28 v; i dq = 400 ma; p out = 60 w; f = 945 mhz 16 18 - db h d v dd = 28 v; i dq = 400 ma; p in = 1.5 w; f = 945 mhz 60 70 - % load mismatch v dd = 35 v; i dq = 400 ma; p out = 100 w; f = 945 mhz all phase angles 20:1 vswr
impedance data LET9060F 4/9 doc id 16863 rev 3 3 impedance data figure 2. impedance data table 6. impedance data frequency z in ( ? )z dl ( ? ) 945 0.34 - j 0.31 2.78 + j 0.66 typical drain load ty p i c a l input g zin z dl d s
LET9060F typical performances doc id 16863 rev 3 5/9 4 typical performances figure 3. gain vs output power freq = 945 mhz, vdd = 28 v figure 4. gain and efficiency vs output power, freq = 945 mhz, vdd = 28 v, idq = 0.4 a table 7. gain vs output power, freq = 945 mhz, idq = 0.4 a figure 5. gain and efficiency vs output power, freq = 945 mhz, vdd = 35 v, idq = 0.4 a ' a i n d " 0 o u t 7 ) d q ! ) d q ! ) d q ! ! - v % f f i c i e n c y ' a i n d " 0 o u t 7 ' a i n % f f i c i e n c y ! - v ' a i n d " 0 o u t 7 6 d d 6 6 d d 6 6 d d 6 6 d d 6 6 d d 6 ! - v % f f i c i e n c y ' a i n d " 0 o u t 7 ' a i n % f f i c i e n c y ! - v
typical performances LET9060F 6/9 doc id 16863 rev 3 table 8. output power vs supply voltage freq = 945 mhz, idq = 0.4 a figure 6. gain and efficiency vs output power, freq = 1850 mhz, vdd = 28 v, idq = 0.4 a 0 o u t 7 6 d d 6 0 i n 7 0 i n 7 0 i n 7 0 i n 7 ! - v % f f i c i e n c y ' a i n d " 0 o u t 7 ' a i n % f f i c i e n c y ! - v
LET9060F package mechanical data doc id 16863 rev 3 7/9 5 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 7. m250 package dimensions table 9. m250 (.230 x .360 2l n/herm w/flg) mechanical data dim. mm. inch min typ max min typ max a 5.21 5.71 0.205 0.225 b 2.16 2.92 0.085 0.115 c 5.59 6.09 0.220 0.240 d 8.89 9.40 0.350 0.370 e 9.40 9.91 0.370 0.390 f 0.11 0.15 0.004 0.006 g 0.89 1.14 0.035 0.045 h 1.45 1.70 0.057 0.067 i 2.67 3.94 0.105 0.155
revision history LET9060F 8/9 doc id 16863 rev 3 6 revision history table 10. document revision history date revision changes 03-dec-2009 1 initial release. 11-feb-2010 2 changed test condition for v (br)dss in table 4: static . 04-apr-2011 3 updated features on cover page.
LET9060F doc id 16863 rev 3 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
