dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 1 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 complementary pair enhancement mode mosfet product summary device v (br)dss r ds( on ) max i d max t a = + 25 c q1 n - channel 30v 460m ? @ v gs = 4.5 v 1.1 a 560m ? @ v gs = 2.5 v 0. 9 a q2 p - channel - 30v 1000 m ? @ v gs = - 4.5 v - 0. 7 a 1500 m ? @ v gs = - 2 .5 v - 0.5a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor c ontrol ? power management functions ? backlighting features and benefits ? footprint of j ust 1.3 mm 2 ? ultra low profile package C 0. 35 mm p rofile ? low gate threshold voltage ? fast switching speed ? ultra - small surface mount package ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: x2 - dfn1310 - 6 (type b) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? t erminals: finish C nipdau a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0. 0 02 grams ( a pproximate) ordering information (note 4 ) part number reel size (inches) tape width (mm) quantity per reel dm c3730ufl3 - 7 7 8 3 , 000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information top view pin - out equivalent circuit 730 = product type marking code q1 n - channel q2 p - channel bottom view x2 - dfn1310 - 6 (type b) e4 esd protected d1 s1 g1 g ate protection diode d 1 g 2 s 2 s 1 g 1 d 2 730 d2 s2 g2 g ate protection diode
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 2 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol q1 q2 unit drain - source voltage v dss 3 0 - 3 0 v gate - source voltage v gss 8 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 1.1 0. 8 - 0. 7 - 0. 6 a thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit total power dissipation (note 5 ) t a = + 25c p d 0. 39 w thermal resistance, junction to ambient (note 5 ) s teady s tate r ja 330 c/w total power dissipation (note 6 ) t a = + 25c p d 0.81 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 156 c/w thermal resistance, junction to case (note 6 ) r j c 51 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( n - channel q1 ) ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 3 0 gs = 0v, i d = 250a j = + 25 c i dss ds = 3 0 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0.45 0.72 0.95 v v ds = v gs , i d = 250 a ds(on) ? gs = 4.5v, i d = 200ma 335 560 v gs = 2 .5v, i d = 1 00ma 398 730 v gs = 1.8 v, i d = 75 ma diode forward voltage v sd gs = 0v, i s = 300m a dynamic characteristics (note 8 ) input capacitance c iss ds = 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ds = 15 v, v gs = 4.5 v , i d = 1 a gate - source charge q gs gd d( on ) gs = 4.5 v , v ds = 10 v , r g = 6 ? d = 1 a turn - on rise time t r d( off ) f notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 3 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 electrical characteristics ( p - channel q2 ) ( @t a = +25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 3 0 gs = 0v, i d = - 250a j = + 25c i dss ds = - 3 0 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 0.5 - 0.78 - 1.1 v v ds = v gs , i d = - 250 a ds(on) ? gs = - 4.5 v, i d = - 400m a 769 1 , 500 v gs = - 2.5 v, i d = - 200m a 949 2 , 000 v gs = - 1 . 8 v, i d = - 100m a diode forward voltage v sd gs = 0v, i s = - 300m a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 3 0 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? ds = - 15 v, v gs = - 4.5 v , i d = - 1 a gate - source charge q gs ? ? gd ? ? d( on ) ? ? gs = - 4.5 v , v ds = - 1 0 v , r g = 6 ? d = - 1 a turn - on rise time t r ? ? d( off ) ? ? f ? ? notes: 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 4 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 typical characteristics ( n - channel) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage(v) fig ure 1. typical output characteristic v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.0v v gs = 2.5v v gs = 3.0v v gs = 4.5v v gs = 8.0v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5 v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.2 0.4 0.6 0.8 1 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs = 4.5v v gs = 2.5v v gs = 1.8v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 200ma i d = 75ma i d = 100ma 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs drain current and junction temperature v gs = 4.5v t a = - 55 o c t a =25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 1.8v, i d = 75ma v gs = 4.5v, i d = 200ma v gs = 2.5v, i d = 100ma
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 5 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 typical characteristics ( n - channel) ( c ont inued ) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - r esistance ( ? j , junction temperature ( gs = 1.8v, i d = 75ma v gs = 2.5v, i d = 100ma v gs = 4.5v, i d = 200ma 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 1ma i d = 250 a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs = 0v t j = - 55 o c t j = 25 o c t j = 85 o c t j = 125 o c t j = 150 o c 1 10 100 1000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v gs (v) q g (nc) figure 11. gate charge v ds = 15v, i d = 1a 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j (max) =150 c =25 gs = 4.5 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 6 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 typical characteristics ( p - channel ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 13. typical output characteristic v gs = - 1.2v v gs = - 1.5v v gs = - 1.8v v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 4.5v v gs = - 8.0v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 14. typical transfer characteristic v ds = - 5 v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 0.2 0.4 0.6 0.8 1 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 15. typical on - resistance vs drain current and gate voltage v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 16. typical transfer characteristic i d = - 400ma i d = - 200ma i d = - 100ma 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 17. typical on - resistance vs drain current and junction temperature v gs = - 4.5v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 1.8v, i d = - 100ma v gs = - 2.5v, i d = - 200ma v gs = - 4.5v, i d = - 400ma
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 7 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 typical characteristics ( p - channel ) (cont inued ) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 1.8v, i d = - 100ma v gs = - 2.5v, i d = - 200ma v gs = - 4.5v, i d = - 400ma 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 21. diode forward voltage vs. current v gs = 0v t j = - 55 o c t j = 25 o c t j = 85 o c t j = 125 o c t j = 150 o c 1 10 100 1000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 22. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v gs (v) q g (nc) figure 23. gate charge v ds = - 15v, i d = - 1a 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24. soa, safe operation area t j (max) =150 c =25 gs = - 4.5 v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 8 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 0.001 0.01 0.1 1 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 25. transient thermal resistance r ja (t)=r(t) * r ja r ja =329
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 9 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. x2 - dfn1310 - 6 (type b) x2 - dfn1310 - 6 (type b) dim min max typ a 0.25 0.35 0.30 a1 0 0.05 0.02 a3 C C b 0.10 0.20 0.15 d 1.25 1.35 1.30 d2 0.30 0.50 0.40 e 0.95 1.05 1.00 e2 0.30 0.50 0.40 e C C k 0.15 C C l 0.20 0.30 0.25 z C C z1 C C z2 C C all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. x2 - dfn1310 - 6 (type b) dimensions value (in mm) c 0. 350 g 0.17 g1 0.16 g2 0.09 g3 0.06 x 0.20 x1 0.52 y 0.375 y1 0.52 d2 e2 k k z(2x) z2(2x) z1(2x) l e2 d2 a a1 seating plane a3 e b d e x y g3 g2 g x1 y1 g1 c
dm c3730ufl3 datasheet n umber: ds 38571 rev. 3 - 2 10 of 10 www.diodes.com april 2016 ? diodes incorporated dm c3730u fl 3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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