GSD63034 fast recovery stud diode ul-certified insulating sleeve voltage up to 3000 v average current 340 a surge current 4.5 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 3000 v v rsm non-repetitive peak reverse voltage 3100 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 50 ma forward characteristics i f(av) average forward current sine wave,180 conduction, tc = 85 c 340 a i f(rms) r.m.s. forward current sine wave,180 conduction, tc = 85 c 534 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 4.5 ka i2t i2 t for fusing coordination 101 ka2s v f(to) threshold voltage t j = t jmax 0.84 v r f forward slope resistance t j = t jmax 1.53 m ? v fm peak forward voltage, max forward current i f = 780 a, tj = 25c 1.8 v switching characteristics t rr rverse recovery time, typ s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0.12 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0.05 c/w t jmax max operating junction temperature 160 c t stg storage temperature -40 / 160 c m mounting torque 50 nm mass 250 g ordering information cathode on stud anode on stud GSD63034-vv gsdr63034-vv vv=v rrm /100 example GSD63034-28 2800 v cathode on stud document GSD63034t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
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