unisonic technologies co., ltd uf640v power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2013 unisonic technologies co., ltd qw-r502-916, a 18 a , 200v, 0.18ohm, n-channel power mosfet ? description these kinds of n-channel power mo sfet field effect transistor have low conduction power loss, high input impedance, and high switching speed, linear transfer characteristics, so can be use in a variety of power conversion applications. the uf640v suitable for resonant and pwm converter topologies. ? features * r ds(on) =0.18 ? @v gs = 10v. * ultra low gate charge (typical 43nc) * low reverse transfer capacitance (c rss = typical 100 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen-free 1 2 3 UF640VL-T3P-T uf640vg-t3p-t to-3p g d s tube uf640vl-ta3-t uf640vg-ta3-t to-220 g d s tube
uf640v power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-916, a absolute maximum rating (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 200 v drain-gate voltage (r gs =20k ? ) v dgr 200 v gate-source voltage v gss 20 v continuous drain current i d 18 a pulsed drain current (note 2) i dm 72 a single pulse avalanche energy rating (note 2) e as 580 mj maximum power dissipation to-3p p d 150 w to-220 123 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyond wh ich the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. l=3.37mh, v dd =50v, r g =25 ? , peak i as =18a, starting t j =25c. pulse width limited by t j ( max ) ? thermal data parameter symbol ratings unit junction to ambient to-3p ja 50 c/w to-220 62.5 junction to case to-3p jc 0.833 c/w to-220 1.01
uf640v power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-916, a ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250 a, v gs =0v 200 v drain-source leakage current i dss v ds = rated bv dss , v gs = 0v 25 a gate-source leakage current i gss v gs = 20v 100 na on characteristics gate threshold voltage v gs ( th ) v gs =v ds , i d =250 a 1.0 2.5 v drain-source on resistance r ds ( on ) i d =10a, v gs =10v 0.14 0.18 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1mhz 1275 pf output capacitance c oss 400 pf reverse transfer capacitance c rss 100 pf switching parameters turn-on delay time t d ( on ) v dd =100v,i d 18a, r g =9.1 ? ,r l =5.4 ? , mosfet switching times are essentially independent of operating temperature 13 21 ns turn-on rise time t r 50 77 ns turn-off delay time t d ( off ) 46 68 ns turn-off fall-time t f 35 54 ns total gate charge q g ( tot ) v gs =10v, i d 18a, v ds =0.8 x rated bv dss gate charge is essentially independent of operating temperature i g ( ref ) = 1.5ma 43 64 nc gate source charge q gs 8 nc gate drain charge q gd 22 nc source to drain diode specifications diode forward voltage (note) v sd t j =25c, i s =18a, v gs =0v, 2.0 v continuous source current (body diode) i s integral reverse p-n junction diode in the mosfet gate sourse drain 18 a pulse source current (body diode) (note) i sm 72 a reverse recovery time t r r t j =25c, i s =18a, di s /dt=100a/ s 120 240 530 ns reverse recovery charge q rr t j =25c, i s =18a, di s /dt=100a/ s 1.3 2.8 5.6 c note: pulse test: pulse width 300 s, duty cycle 2%.
uf640v power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-916, a ? test circuit fig.3 switching time test circuit t d(off) t f 90% 50% 50% v gs 0 0 v ds t d(on) 90% t r 10% 10% fig.4 resistive switching waveforms d.u.t. r g v gs r l v dd t on pulse width t off
uf640v power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-916, a ? typical characteristics 0 1.0 2.0 5.0 0 6 12 18 24 30 saturation characteristics drain to source voltage, v ds (v) 3.0 4.0 pulse duration = 80s duty cycle = 0.5% max v gs =6v 01530 75 0 0.3 0.6 0.8 1.2 1.5 drain to source on resistance vs. gate voltage and drain current drain current, i d (a) 45 60 v gs =10v pulse duration = 80s duty cycle = 0.5% max utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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