unisonic technologies co., ltd 2n6099 preliminary p o w e r transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r205-006.a complementary silicon transistors ? description the utc 2n6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. these device can be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverts. ? features * complement characterized for linear operation * high dc current gain and low saturation voltage h fe > 15(-8a, -4v) v ce(sat) <-1.4v(i c =-8a, i b =-0.8a) * for low distortion complementary designs to-3 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n6099l-t30-y 2N6099G-T30-Y to-3 b e c tray ? marking information
2n6099 preliminary p o w e r transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r205-006.a ? absolute maximum rating (t a =25c, unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -7 v collector-emitter voltage v cex -160 v power dissipation t c =25c p d 150 w dertate above 25c 0.855 w/c collector current continuous i c -16 a peak -30 a base current continuous i b -4 a peak -15 a junction temperature t j 150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse test: p w <=5ms, duty cycle<=10% ? thermal data parameter symbol ratings unit junction to case jc 1.17 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =-0.2a, i b =0 -160 v collector-emitter sustaining voltage bv cex i c =-0.1a,v be ( off ) =-1.5v, r be =-100 ? -160 v collector-emitter sustaining voltage bv cer i c =-0.1a, r be =-100 ? -150 v collector cut-off current i cbo v cb =-140v, i e =0 -2 ma emitter cut-off current i ebo v be =-7v, i c =0 -5 ma collector cut-off current i cex v ce =-140v,v be ( off ) =-1.5v -2 ma v ce =-140v,v be ( off ) =-1.5v,t c =150c -10 ma on characteristics dc current gain (note) h fe1 v ce =-4v, i c =-8a 15 60 h fe2 v ce =-4v, i c =-16a 5 collector-emitter satu ration voltage v ce(sat) i c =-8a, i b =-800ma -1.4 v i c =-16a, i b =-3.2a -4 v base-emitter satura tion voltage v be ( on ) i c =-8a, v ce =-4v -2.2 v dynamic characteristics small signal current gain h fe i c =-1a, v ce =-4v, f=1khz 40 magnitade of commom-emitter small signal, short circuit forward current transfer ratio |h fe | i c =-1a, f=50khz 4 second breakdown collector with base forward biased i s /b t=1s(non-repetive), v ce =-100v -1.5 a note: pulse test: p w <=300 s, duty cycle<=2%
2n6099 preliminary p o w e r transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r205-006.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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