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| 2001. 7. 25 1/2 semiconductor technical data kdr331v schottky barrier type diode revision no : 0 high speed switching. features low forward voltage : v f =0.25(typ.) @i f =5ma very small package : vsm. maximum rating (ta=25 ) dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. anode 1 2. anode 2 3. cathode + _ + _ + _ + _ + _ + _ + _ + _ 3 2 1 electrical characteristics (ta=25 ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 10 v maximum (peak) forward current i fm 100 * ma average forward current i o 50 * ma surge current (10ms) i fsm 1 * a power dissipation p d 100 mw junction temperature t j 125 storage temperature range t stg -55 125 operating temperature range t opr -40 100 characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.21 - v v f(2) i f =5ma - 0.25 0.30 v f(3) i f =50ma - 0.35 0.50 reverse current i r v r =10v - - 20 a total capacitance c t v r =0v, f=1mhz - 13 40 pf * : unit rating. total rating=unit rating 1.5 type name marking uw
2001. 7. 25 2/2 kdr331v revision no : 0 reverse current i r (a) reverse voltage v r (v) i r - v r 0 0 p - ta power dissipation p (mw) 20 forward current i f (ma) forward voltage v f (mv) i f - v f reverse voltage v r (v) total capacitance c t (pf) 0.01 0.1 c t - v r 11020 0 2 25 50 75 100 125 40 60 80 100 120 0 0.01 0.1 24 1 8 610 10 0 0.01 0.1 1 ta=23 c 100 200 300 400 500 12 4 6 8 10 12 14 ta=23 c ambient temperature ta ( c) |
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