hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 1 features ? broad bandwidth specified 2 - 18 ghz ? usable up to 26 ghz ? integrated bias network ? lower insertion loss / higher isolation ? fully monolithic, glass encapsulated chip ? up to +33 dbm cw power handling @ +25c ? rohs* compliant description the ma4sw210b - 1 (sp2t) and ma4sw310b - 1 (sp3t) broadband switches with an integrated bias networks utilizing macoms hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. by using small spacing between circuit elements, this combination of silicon and glass gives hmic devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. the top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. the gold metallization on the backside of the chip allows for attachment via 80/20 (gold/tin) solder or conductive silver epoxy. ordering information part number package ma4sw210b - 1 gel pack ma4sw310b - 1 gel pack *restrictions on hazardous substances, european union directive 2011/65/eu. ma4sw210b - 1 (sp2t) functional diagrams 1 ma4sw310b - 1 (sp3t) 1. yellow areas indicate ribbon/wire bonding pads
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 electrical specifications: t a = 25c, 20 ma parameter test conditions units min. typ. max. insertion loss 2 ghz 6 ghz 12 ghz 18 ghz db 1.5 0.7 0.9 1.2 1.8 1.0 1.2 1.8 isolation 2 ghz 6 ghz 12 ghz 18 ghz db 55 47 40 36 60 50 45 40 input return loss 2 ghz 6 ghz 12 ghz 18 ghz db 14 15 15 13 switching speed 2 ns 50 ma4sw210b - 1 (spdt) ma4sw310b - 1 (sp3t) parameter test conditions units min. typ. max. insertion loss 2 ghz 6 ghz 12 ghz 18 ghz db 1.6 0.8 1.0 1.3 2.0 1.1 1.3 1.9 isolation 2 ghz 6 ghz 12 ghz 18 ghz db 54 47 40 36 59 50 45 40 input return loss 2 ghz 6 ghz 12 ghz 18 ghz db 14 15 16 14 switching speed 2 ns 50 1. typical switching speed is measured from (10% to 90% and 90% to 10% of detected rf voltage), driven by ttl compatible drivers . i n the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) the switching speed is m eas ured using an rc network using the following values: r = 50 - 200 , c = 390 - 1000 pf. driver spike current, i c = c dv/dt, ratio of spike current to steady state current, is typically 10:1.
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 3 absolute maximum ratings 3,4,5 parameter absolute maximum rf cw incident power +33 dbm reverse voltage - 50 v bias current per port 50 ma @ +25c operating temperature - 65c to +125c storage temperature - 65c to +150c junction temperature +175c 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. macom does not recommend sustained operation near these survivability limits. 5. maximum operating conditions for a combination of rf power, dc bias and temperature: +33 dbm cw @ 15 ma (per diode) @ +85c. handling procedures please observe the following precautions to avoid damage: static sensitivity these electronic devices are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 0 (hbm) and class c1 (cdm).devices. cleanliness the chips should be handled in a clean environment free of dust and organic contamination. wire / ribbon bonding thermo compression wedge bonding using 0.003 x 0.00025 ribbon or 0.001 diameter gold wire is recommended. a work stage temperature of 150c - 200c, tool tip temperature of 120c - 150 and a downward force of 18 to 22 grams should be used. if ultrasonic energy is necessary, it should be adjusted to the minimum level required to achieve a good bond. excessive power or force will fracture the silicon beneath the bond pad causing it to lift. rf bond wires and ribbons should be kept as short as possible for optimum rf performance. chip mounting hmic switches have ti - pt - au backside metallization and can be mounted using a gold - tin eutectic solder or conductive epoxy. mounting surface must be free of contamination and flat. eutectic die attachment an 80/20, gold - tin, eutectic solder is recommended. adjust the work surface temperature to 255 o c and the tool tip temperature to 265 o c. after placing the chip onto the circuit board re - flow the solder by applying hot forming gas (95/5 ni/h) to the top surface of the chip. temperature should be approximately 290 o c and not exceed 320 o c for more than 20 seconds. typically no more than three seconds is necessary for attachment. solders rich in tin should be avoided epoxy die attachment a minimum amount of epoxy, 1 - 2 mils thick, should be used to attach chip. a thin epoxy fillet should be visible around the outer perimeter of the chip after placement. epoxy cure time is typically 1 hour at 150c.
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 4 typical rf performance at t amb = +25c, 20 ma bias current isolation vs frequency ma4sw210b-1 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz isolation, db insertion loss vs frequency ma4sw210-b1 -8 -6 -4 -2 0 2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz insertion loss, db isolation vs frequency ma4sw310b-1 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz isolation, db insertion loss vs frequency ma4sw310b-1 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz insertion loss, db return loss vs frequency ma4sw310b-1 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz return loss, db return loss vs frequency ma4sw210b-1 -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency, ghz return loss, db
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 5 6. the ma4sw310b - 1 contains the same pin diodes and will have similar performance. 20 40 60 80 100 120 140 10.00 15.00 20.00 25.00 30.00 35.00 tjunction ( deg. c ) c.w. incident power ( dbm ) ma4sw210b - 1 series diode junction temperature vs. incident power at 8 ghz series diode_5ma series diode_10ma series diode_20ma 5 ma 20 ma 10 ma 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 10.00 15.00 20.00 25.00 30.00 35.00 compression power ( db ) c.w. incident power ( dbm ) ma4sw210b - 1 compression power vs. incident power at 8 ghz series diode_5ma series diode_10ma series diode_20ma 5 ma 10 ma 20 ma
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 6 driver / bias connections ma4sw210b - 1 (sp2t) ma4sw310b - 1 (sp3t) dc control current (ma) rf output states j4 j5 j1 - j2 j1 - j3 - 20 +20 low loss isolation +20 - 20 isolation low loss dc control current (ma) rf output states j5 j6 j7 j1 - j2 j1 - j3 j1 - j4 - 20 +20 +20 low loss isolation isolation +20 - 20 +20 isolation low loss isolation +20 +20 - 20 isolation isolation low loss operation of ma4swx10b - 1 series operation of the ma4swx10b - 1 series pin diode switches is achieved by simultaneous application of dc currents to the bias pads. the required levels for the different states are shown in the tables below. the control currents should be supplied by constant current sources. the nominal 40 - 60 ? pull - up resistor voltage @ j4 and j5 is usually - 1 v for - 20 ma and +20 ma for +1 v. ma4sw210b - 1 (sp2t) ma4sw310b - 1 (sp3t) j 1 r f i n r f o u t j 3 j 5 b i a s i n r f o u t j 2 j 4 b i a s i n j 1 r f i n r f o u t j 4 j 7 b i a s i n r f o u t j 2 j 5 b i a s i n r f o u t b i a s i n j 6 j 3
hmic? silicon pin diode switches with integrated bias network rev. v6 ma4swx10b - 1 series 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 7 chip outline drawings 7,8 7. topside and backside metallization is gold, 2.5 m thick typical. 8. yellow areas indicate ribbon/wire bonding pads dim inches mm min. max. min. max. a 0.066 0.070 1.680 1.780 b 0.048 0.052 1.230 1.330 c 0.004 0.100 0.006 0.150 d 0.004 0.090 0.006 0.140 e 0.012 0.292 0.013 0.317 f 0.029 0.735 0.030 0.760 g 0.030 0.766 0.031 0.791 h 0.029 0.732 0.030 0.757 j 0.005 ref. 0.129 ref. k 0.005 ref. 0.129 ref. ma4sw210b - 1 ma4sw310b - 1 dim inches mm min. max. min. max. a 0.071 0.072 1.807 1.833 b 0.071 0.072 1.797 1.823 c 0.0045 0.100 0.0055 0.150 d 0.031 0.781 0.032 0.807 e 0.029 0.732 0.030 0.758 f 0.006 0.152 0.007 0.178 g 0.004 0.099 0.005 0.125 h 0.005 0.125 0.006 0.151 j 0.034 0.035 0.871 0.897 k 0.064 0.065 1.617 1.643 l 0.066 0.067 1.683 1.709 m 0.005 ref. 0.1250 ref. n 0.0046 ref. 0.1180 ref.
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