, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u s a silico n np n powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 mjf1300 9 descriptio n ? collector-emitte r sustainin g voltag e : vceo(sus ) = 400v(min. ) ? collecto r saturatio n voltag e :v ce (sat ) = 1.5(max)@l c =8.0 a ? switchin g tim e : t f = 0. 7 u s(max.) @ l c = 8.0 a application s ? designe d fo r us e i n high-voltage , high-speed , powe r swit - chin g i n inductiv e circuit , the y ar e particularl y suite d fo r 11 5 an d 220 v switchmod e application s suc h a s switchin g regulators , inverters , moto r controls.solenoid/rela y driver s an d deflectio n circuits . absolut e maximu m ratings(t a =25c ) symbo l vce v vce o v eb o i c ic m i b '|b m p c t i tst g paramete r collector-emitte r voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k bas e curren t bas e current-pea k collecto r powe r dissipatio n t c =25'c junctio n temperatur e storag e temperatur e rang e valu e 70 0 40 0 9 1 2 2 4 6 1 2 5 0 15 0 -65-15 0 uni t v vv a aa a w ' c ? c therma l characteristic s symbo l rt h j- c rt h j- a paramete r ma x therma l resistance.junctio n t o cas e 2. 5 therma l resistance.junctio n t o ambien t 62. 5 uni t ?c/ w ?c/ w 2 w w 3 f f? f ' pi n t.bas e 2 . collecto r 3 . emitte r 1 2 3 to-220 f packag e b - - c - -s - f \ ;-, . o q * : " ~~" r -n~~7n ' ?, - - ' ' . u ; i ; " r n v -- ' .- . [':?' ,..:-: j -.., v ; a ' 1 1 > ? ' .*-? 'i ?..^^~? t -?-^? . < u -- ? h o ' l , . , . , ' - r ? -,-..,; , k ; : - - d j . , - h ?? m m di m mi n ma x a 14.9 5 15.0 5 b 10.0 0 10.1 0 c 4.4 0 4.6 0 d 0.7 5 0.8 0 f 3.1 0 3.3 0 h 3.7 0 3.9 0 j 0.5 0 0.7 0 * k 13. 4 13. 6 l 1.1 0 1.3 0 n 5.0 0 5.2 0 c ! 2.7 0 2.9 0 r 2.2 0 2.4 0 s 2.6 5 2 8 5 u 4 6.4 0 6.6 0 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n. i semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r mjf1300 9 electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l vceo(sus ) vce(sat)- i vce(sat)- 2 vce(sat)- 3 vbe(sat)- 1 vbe(sat)- 2 ice v ieb o hpe- 1 hpe- 2 f r co b paramete r collector-emitte r sustainin g voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n current-gainbandwidt h produc t outpu t capacitanc e condition s l c =10ma ; i b = 0 i c =5a;i b =1 a l c =8a;lb=1.6 a i c =12a;i b =3 a i c =5a;i b =1 a i c =8a;i b =1.6 a vcev = 700 v v b e(off) = 1 5 v t c =100' c veb = 9v ; l c = 0 lc = 5a ; v ce = 5 v lc = 8a ; v ce = 5 v lc=0.5a;v c e=10v ; i e = 0 ; v cb = 10v ; f tes t = 0. 1 mh z mi n 40 0 8 6 4 typ . 18 0 ma x 1. 0 1. 5 3. 0 1. 2 1. 6 1 5 1 4 0 3 0 uni t v v v v v v m a m a mh z p f switchin g times ; resistiv e loa d to n t s tf storag e tim e storag e tim e fal l tim e ic - 8a ; vgc - 1 25v ; lsi = lb2 = 1.6a ; t p =25us ; dut y cycle d 1 % 1. 1 3. 0 0. 7 u s u s u s downloaded from: http:///
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