? auirf3315s absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. features ? advanced planar technology ? low on-resistance ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. 1 2015-11-13 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com automotive grade hexfet ? power mosfet v dss 150v r ds(on) max. 82m ? i d 21a ? d 2 pak auirf3315s s d g g d s gate drain source base part number package type standard pack orderable part number form quantity auirf3315s d 2 -pak tube 50 auirf3315s tape and reel left 800 AUIRF3315STRL symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 21 a i d @ t c = 100c continuous drain current, v gs @ 10v 15 i dm pulsed drain current ? 84 p d @t a = 25c maximum power dissipation 3.8 p d @t c = 25c maximum power dissipation 94 linear derating factor 0.63 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 350 mj i ar avalanche current ? 12 a e ar repetitive avalanche energy ? 9.4 mj dv/dt peak diode recovery ? 2.5 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? w thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 1.6 c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? 40
? auirf3315s 2 2015-11-13 notes: ? ? repetitive rating; pulse width limited by max. junc tion temperature. (see fig.11) ? limited by t jmax, starting t j = 25c, l = 4.9mh, r g = 25 ? , i as = 12a. (see fig.12) ? i sd ?? 12a, di/dt ?? 140a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 300s; duty cycle ? 2%. ? when mounted on 1" square pcb (fr-4 or g-10 material). for re commended footprint and soldering techniques refer to application note #an-994 ?? r ? is measured at t j of approximately 90c static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.187 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 82 m ??? v gs = 10v, i d = 12a ?? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na ? v gs = 20v ? gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? ??? 95 nc ? i d = 12a q gs gate-to-source charge ??? ??? 11 v ds = 120v q gd gate-to-drain charge ??? ??? 47 v gs = 10v ? t d(on) turn-on delay time ??? 9.6 ??? ns v dd = 75v t r rise time ??? 32 ??? i d = 12a t d(off) turn-off delay time ??? 49 ??? r g = 5.1 ???? t f fall time ??? 38 ??? r d = 5.9 ??? ? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1300 ??? pf ? v gs = 0v c oss output capacitance ??? 300 ??? v ds = 25v c rss reverse transfer capacitance ??? 160 ??? ? = 1.0mhz, see fig.5 diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 21 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 84 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 12a,v gs = 0v ?? t rr reverse recovery time ??? 174 260 ns t j = 25c ,i f = 12a q rr reverse recovery charge ??? 1.2 1.7 c di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? auirf3315s 3 2015-11-13 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 1 typical output characteristics fig. 4 normalized on-resistance vs. temperature
? auirf3315s 4 2015-11-13 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig. 7 typical source-to-drain diode forward voltage
? auirf3315s 5 2015-11-13 ? fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms
? auirf3315s 6 2015-11-13 fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12b. unclamped inductive waveforms fig 13b. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 13a. gate charge waveform
? auirf3315s 7 2015-11-13 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? auirf3315s 8 2015-11-13 ? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d 2 pak (to-263ab) part marking information ywwa xx ? xx date code y= year ww= work week auirf3315s lot code part number ir logo d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches))
? auirf3315s 9 2015-11-13 d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? auirf3315s 10 2015-11-13 ? ? highest passing voltage. published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. d 2 -pak msl1 ? esd machine model class m4 (+/- 600v) ? aec-q101-002 human body model ? class h1c (+/- 2000v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes ? moisture sensitivity level ? revision history date comments 11/13/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ?? corrected typo in test condition current from ?43a? to ?12a? for vsd and trr/qrr on page 2.
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