jiangsu changjiang electron ics technology co., lt d dfnwb2 3-6l-c plastic-encapsulate mosfets CJCD2007 dual n-channel mosfet description the CJCD2007 uses a dvanced tr ench technology to provide excellent r ds(on) and low gate charge. it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. marking: maximum ratings (t a =25 unless otherwis e noted) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous dr ain current i d 7 a pulsed drai n current i dm * 30 a thermal resistance from jun ction to ambient r ja 125 /w junction t emperature t j 150 storage temperature t stg -55~+150 lead te mperature for soldering purposes(1/8?? from case for 10 s) t l 260 *repetitive rating pluse width limited by junction temperature. dfn w b2 3-6l -c v (br)dss r ds(on) max i d 20v 20 m @ 10v ? 7a? 22 m @ 4.5v 24m @3.8v equivalent circuit www.cj-elec.com 1 d,may,2015 ? 26 m @2.5v 35m @1.8v
parameter sy mbol test condition min typ max unit stat ic parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 20 v zero gate volt age drain current i dss v ds =16v,v gs = 0v 1 a gate-body leak age current i gss v gs =4.5v, v ds = 0v 1 a v gs =8v, v ds = 0v 10 a gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =250a 0.4 1 v drain-source on-resistance (note 1) r ds( on) v gs =10v, i d =7a 20 m ? v gs =4.5v, i d =6.6a 22 m ? v gs =3.8v, i d =6a 24 m ? v gs =2.5v, i d =5.5a 26 m ? v gs =1.8v, i d =5a 35 m ? for ward tranconductance (note 1) g fs v ds =5v, i d =7a 9 s diode for ward voltage (note 1) v sd i s =1a, v gs = 0v 1 v dynam ic parameters (note 2) input capacita nce c iss v ds =10v,v gs =0v,f =1 mhz 1150 pf output capacit ance c oss 185 pf reverse tr ansfer capacitance c rss 145 pf total gate char ge q g v ds =10v,v gs =4.5v,i d =7a 15 nc gate-source charge q gs 0.8 nc gate-drain charge q gd 3.2 nc switching para meters (note 2) turn-on dela y time t d(on) v gs =5v,v dd =10v, r l =1.35 ? ,r gen =3 ? 6 ns turn-on rise time t r 13 ns turn-off delay time t d(of f) 52 ns turn-off fall time t f 16 ns notes : 1. pulse t est : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. mosfet electrical characteristics www.cj-elec.com 2 d , may ,2015 t =25 unless otherwise specified a
0123456 0 4 8 12 16 20 024681 0 0 20 40 60 80 0 4 8 12 16 20 0 20 40 60 80 0123 0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 25 50 75 100 125 0.55 0.60 0.65 0.70 0.75 0.80 22 2.2v 2.0v 1.8v 1.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.2v gate to source voltage v gs (v) on-r esistance r ds(on) (m ? ) i d =3a t a =25 pulsed v gs ?? r ds(on) t a =25 pulsed v gs =10v v gs =2v on-r esistance r ds(on) (m ? ) drain current i d (a) i d ?? r ds(on) outp ut characteristics drain current i d (a) gate to source voltage v gs (v) v ds =5v pulsed t a =100 t a =25 transf er characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? threshold volt age v th (v) ambient te mperature t a ( ) i d =250ua thres hold voltage 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 d , may ,2015
min. ma x. min. max. a 0.700 0.800 0.028 0.031 a1 0.000 0.050 0.000 0.002 a3 d 1.950 2.050 0.077 0.081 e 2.950 3.050 0.116 0.120 d1 1.4 0 0 1. 60 0 0.05 5 e 1 1.6 0 0 1. 80 k b 0.200 0.300 0.008 0.012 e l 0.300 0.400 0.012 0.016 0.500typ. 0.020typ. symbol dimensions in millimeters dimensions in inches 0.200min. 0.008min. 0.203ref. 0.008ref. 4 d,may,2015 c c 0 0.0 63 0 .0 63 0.071
dfnwb2x3-6l tape and reel www.cj-elec.com 5 d,may,2015
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