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rs1g300gn nch 40v 30a power mosfet datasheet ll outline v dss 40v hsop8 r ds(on) (max.) 2.5m i d 30a p d 3w ll inner circuit ll features 1) low on - resistance. 2) high power package (hsop8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. 5) 100% rg and uis tested. ll packaging specifications type packing embossed tape reel size (mm) 330 ll application tape width (mm) 12 high-efficiency dc/dc converter application. basic ordering unit (pcs) 2500 motor drivers taping code tb marking rs1g300gn ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss 40 v continuous drain current i d 30 a pulsed drain current i d,pulse *1 120 a gate - source voltage v gss 20 v avalanche energy, single pulse e as *5 136 mj avalanche current i as *5 30 a power dissipation p d *2 3 w p d *3 35 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *2 - 41.7 - /w thermal resistance, junction - case r thjc *3 - 3.57 - /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 40 - - v breakdown voltage temperature coefficient v (br)dss i d = 1ma - 26.2 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = 40v, v gs = 0v - - 1 a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 100 na gate threshold voltage v gs(th) v ds = v gs , i d = 1ma 1.0 - 2.5 v gate threshold voltage temperature coefficient v gs(th) i d = 1ma - -4.9 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = 10v, i d = 30a - 1.9 2.5 m v gs = 4.5v, i d = 30a - 2.4 3.0 gate input resistance r g - 1.5 - transconductance g fs *4 v ds = 5v, i d = 30a 36 - - s *1 pw Q 10s, duty cycle Q 1% *2 mounted on 40mm40mm cu board *3 tc=25 *4 pulsed *5 l ? 0.2mh, v dd = 20v, r g = 25, starting t j = 25 fig.3-1,3-2 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 4230 - pf output capacitance c oss v ds = 20v - 680 - reverse transfer capacitance c rss f = 1mhz - 190 - turn - on delay time t d(on) *4 v dd ? 20v,v gs = 10v - 24.2 - ns rise time t r *4 i d = 15a - 19.8 - turn - off delay time t d(off) *4 r l = 1.33 - 89.7 - fall time t f *4 r g = 10 - 38.3 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? 20v, i d = 30a - 28.6 - nc v gs = 4.5v v dd ? 20v, i d = 30a - 56.8 - v gs = 10v gate - source charge q gs *4 v dd ? 20v, i d = 30a - 12.1 - gate - drain charge q gd *4 v gs = 4.5v - 7.9 - ll body diode electirical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. inverse diode continuous, forward current i s *1 t a = 25 - - 2.5 a forward voltage v sd *4 v gs = 0v, i s = 2.5a - - 1.2 v reverse recovery time t rr *4 i s = 30a, v gs =0v di/dt = 100a/s - 42 - ns reverse recovery charge q rr *4 - 47 - nc www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 forward transfer admittance vs. drain current www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig.11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig.1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 typical capacitance vs. drain - source voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll electrical characteristic c r ves fig.1 7 switching characteristics fig.18 dynamic input cha racteristics fig.19 source current vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll me asurement circuits fig.1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalan che waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20131213 - rev.001 downloaded from: http:///
rs1g300gn datasheet ll d imensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20131213 - rev.001 downloaded from: http:///
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