sot-23-3l plastic-encapsulate mosfets CJK3407 p-channel enhancement mode field effect transistor general description the CJK3407 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. marking: r7 maximum ratings (t a =25 unless otherwise noted) parameter symbol v alue units drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -4.1 a drain current-pulsed i dm -20 a power dissipation p d 300 mw thermal resistance from junction to ambient r ja 41 7 /w junction temperature t j 150 storage temperature t stg -55~ +150 so t -23 -3l 1. gate 2. source 3. drain 1 of 2 sales@zpsemi.com www.zpsemi.com CJK3407
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs = 0v -1 a gate -source leakage current i gss v gs =20v, v ds = 0v 100 na v gs =-10v, i d =-4.1a 60 m ? drain-source on-resistance (note 1) r ds(on) v gs =-4.5v, i d =-3a 87 m ? forward tranconductance (note 1) g fs v ds =-5v, i d =-4a 5.5 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v diode forward voltage (note 1) v sd i s =-1a,v gs =0v -1 v dynamic characteristics (note 2) input capacitance c iss 700 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 75 pf switching characteristics (note 2) turn-on delay time t d(on) 8.6 ns turn-on rise time t r 5.0 ns turn-off delay time t d(off) 28.2 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ? ,r gen =3 ? 13.5 ns notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. these parameter have no way to verify. 2 of 2 sales@zpsemi.com www.zpsemi.com CJK3407
|
