, d nc. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . mtm55n0 8 mtm55n1 0 mtm60n0 5 mtm60n0 6 6 5 an d 6 0 amper e n-channe l two s powe r fet s n>s t c ? 125 c gate-bod y leakag e curren t (vq s = 2 0 vdc . vd s = 0 ) vbridss i ids s igs s s o 6 0 8 0 10 0 _ 1 0 10 0 10 0 vd c < nad c nad c o n characteristics * gat e threshol d voltag e (vd s = vgs . ' o - 1 ma) , vd s = vg s t j = 100- c stati c drain-sourc e on-resistanc e (vg s = 1 0 vdc , i d = 3 0 ad d mtm60nos/mtm60n0 6 (vg s - 1 0 vdc . i d = 27. 5 adc ) mtmssnob/mtmssni o drain-sourc e on-voltag e (vg s * 1 0 v ) ? d - 6 0 adc l mtm60n05/mtm60n0 6 (i d = 3 0 adc , t j = 100c ) mtm60n05/mtm60n0 6 (i d - 5 5 adc ) MTM55N08/mtm55n1 0 (i d - 27. 5 adc . t c - 100x ) MTM55N08/mtm5sn1 0 forwar d transconductanc e (vd s - i s v , i d - 3 0 a ) mtm60n05/mtm60n0 6 (vd s - i s v . i d - 27. 5 a ) mtmssnob/mtmssni o v gs(th ) r ds(on ) vds(on ) 9f s 2 1. 5 - - 1 0 1 0 4. 5 4 0.02 8 0.0 4 1.9 8 1.6 8 2. 6 2. 2 ~ vd c oh m vd c mho s wt o t dmeiisiamgamitokuncmihum s msm . na . 1 . contoum g dmenskm : mo f to-204 m n j semi-conductor s reserve s th e righ t t o chang e test conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e hot h accurat e an d reliabl e a t th e tim e ot'eoin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
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