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june 2011 doc id 018551 rev 1 1/11 11 STL12N3LLH5 n-channel 30 v, 0.0079 , 12 a, powerflat? (3.3 x 3.3) stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses applications switching applications description the STL12N3LLH5 is a 30 v n-channel stripfet? v. this power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (fom). figure 1. internal schematic diagram order code v dss r ds(on) max i d STL12N3LLH5 30 v < 0.009 12 a (1) 1. the value is rated according rthj-pcb powerflat?(3.3x3.3) (chip scale package) table 1. device summary order code marking package packaging STL12N3LLH5 12n3l powerflat? (3.3 x 3.3) tape and reel www.st.com
contents STL12N3LLH5 2/11 doc id 018551 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STL12N3LLH5 electrical ratings doc id 018551 rev 1 3/11 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 22 v i d (1) 1. the value is rated according to rthj-pcb drain current (continuous) at t c = 25 c 12 a i d (1) drain current (continuous) at t c = 100 c 7.5 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 48 a p tot (3) 3. the value is rated according to rthj-c total dissipation at t c = 25 c 50 w p tot (1) total dissipation at t c = 25 c 2 w derating factor 0.4 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain) 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu, t < 10 sec thermal resistance junction-pcb 42.8 c/w r thj-pcb (2) 2. steady-state thermal resistance junction-pcb 63.5 c/w
electrical characteristics STL12N3LLH5 4/11 doc id 018551 rev 1 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states table 5. dynamic symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 a, v gs =0 30 v i dss zero gate voltage drain current (v gs = 0) v ds =max. rating, v ds =max. rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds =v gs , i d =250 a 1 2.5 v r ds(on) static drain-source on resistance v gs =10 v, i d =6 a v gs =4.5 v, i d =6 a 0.0079 0.0095 0.0090 0.011 symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 1500 295 39 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d =12 a v gs =4.5 v (see figure 14) 12 4 4.7 nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain 0.5 1.5 2.5
STL12N3LLH5 electrical characteristics doc id 018551 rev 1 5/11 table 6. switching times table 7. source drain diode symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 6 a, r g =4.7 , v gs =4.5 v (see figure 13) - 9.3 14.5 22.7 4.5 - ns ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current - 15 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 60 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5 % forward on voltage i sd =12 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =12 a, di/dt=100 a/s, v dd =20 v, tj=150 c (see figure 18) - 25 17.5 1.4 ns nc a
test circuits STL12N3LLH5 6/11 doc id 018551 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform f igure 7. switching time wave form am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL12N3LLH5 package mechanical data doc id 018551 rev 1 7/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL12N3LLH5 8/11 doc id 018551 rev 1 figure 8. powerflat? (3.3 x 3.3) drawing table 8. powerflat? (3.3 x 3.3) mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.02 a3 0.20 b 0.23 0.30 0.38 c 0.328 c1 0.12 d3.30 d2 2.50 2.65 2.75 e3.30 e2 1.25 1.40 1.50 f 1.325 f1 0.975 g 0.850 g1 0.250 76 3 5509_rev_a
STL12N3LLH5 package mechanical data doc id 018551 rev 1 9/11 figure 9. recommended footprint am0 8 614v1
revision history STL12N3LLH5 10/11 doc id 018551 rev 1 5 revision history table 9. document revision history date revision changes 03-jun-2011 1 initial release.
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