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| Datasheet File OCR Text: |
| i nchange semiconductor isc product sp ecification isc w ebsite is registered trademark 1 isc silicon pn p power transistor 2 sa 505 description collector - emitter breakdown voltage - v ( br ) ceo = - 5 0v ( min . ) collector - emitter saturation voltage - v ce (sat) = - 0.8 v ( m ax. ) @ i c = - 500m a applications designed for medium power amplifier applications. a bsolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector - b ase v oltage - 6 0 v v ceo collector - e mitter v oltage - 5 0 v v ebo emitter - b ase v oltage - 5 .0 v i c collector c urrent - continuous - 1 a i e e mitter c urrent - continuo us 1 a p c collector p ower d issipat i on 1 w t j junction temperature 150 t stg storage temperature range - 55~ 150
i nchange semiconductor isc product sp ecification isc w ebsite is registered trademark 2 isc silicon pnp power transistor 2 sa505 electrical characteristics t c =25 v (br) ceo collector - e mitter breakdown v oltage i c = - 10m a; i b = 0 - 50 v v (br) ebo emitter - b ase breakdown v oltage i e = - 1m a; i c = 0 - 5 v v c e( sat ) collector - e mitter s aturation v oltage i c = - 5 00m a; i b = - 50m a - 0.8 v v be( on ) ba se - e mitter o n v oltage i c = - 500m a; v ce = - 2 v - 1.3 v i c bo collector c utoff c urrent v c b = - 30 v ; i e = 0 - 1.0 a i ebo emitter c utoff c urrent v eb = - 5 ; i c = 0 - 1 .0 a h fe - 1 dc c urrent g ain i c = - 5 0 m a; v ce = - 2 v 40 240 h fe - 2 dc c urrent g ain i c = - 80 0 m a ; v ce = - 2 v 13 f t current - gain bandwidth product i c = - 10m a; v ce = - 10 v 10 0 mhz c ob output capacitance i e = 0 ; v c b = - 10 v ; f= 1.0mhz 20 pf ? h fe - 1 classifications r o y 40 - 80 70 - 140 120 - 240 |
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