2011. 10 . 4 1/6 semiconductor technical data KF7N50D/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellentavalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss(min.) = 500v, i d = 5.5a h r ds(on) =1.0 ? (max) @v gs =10v h qg(typ.) =16nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate2. drain 3. source ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate2. drain 3. source pin connection kf7n50i KF7N50D characteristic symbol rating unit KF7N50D/i drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 5.5 a @t c =100 ? 3.5 pulsed (note1) i dp 21 single pulsed avalanche energy(note 2) e as 180 mj repetitive avalanche energy(note 1) e ar 4 mj peak diode recovery dv/dt(note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 69.4 w derate above25 ? 0.56 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.8 ? /w thermal resistance, junction-to-ambient r thja 110 ? /w downloaded from: http:///
2011. 10 . 4 2/6 KF7N50D/i revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.5 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =2.7a - 0.83 1.0 ? dynamic total gate charge q g v ds =400v, i d =7a v gs =10v (note4,5) - 16 - nc gate-source charge q gs - 3.5 - gate-drain charge q gd - 6.0 - turn-on delay time t d(on) v dd =200v, i d =7a r g =25 ? (note4,5) v gs =10v - 20 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 50 - turn-off fall time t f - 25 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 710 - pf output capacitance c oss - 95 - reverse transfer capacitance c rss - 8.5 - source-drain diode ratings continuous source current i s v gs 2011. 10 . 4 3/6 KF7N50D/i revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 41 0 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.21.1 1.0 05 0 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 3.01.0 0.2 0.5 1.5 2.52.0 01 2 61 8 9 31 5 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i d = 3.5a v gs = 0v i ds = 250 100 c 25 c 11 0 0 0.1 10 10 2 10 1 10 0 10 -1 v gs =10v v gs =10v v gs =7v v ds =30v v gs =5v 100 c 25 c v gs =7v downloaded from: http:///
2011. 10 . 4 4/6 KF7N50D/i revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 1210 62 4 8 21 24 9 3 15 12 18 6 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 4 10 3 10 2 10 1 10 0 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 0 31 2 65 4 75 150 125 50 100 02 5 drain current i d (a) i d =7 a c junction temperature t j ( ) fig10. i d - t j v ds = 400v t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) 10 s time ( sec ) fig11. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 10 1 duty=0.5 0 .02 0 . 05 0 . 1 0.2 0.01 single pulse - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm downloaded from: http:///
2011. 10 . 4 5/6 KF7N50D/i revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2011. 10 . 4 6/6 KF7N50D/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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