2013. 1. 3 1/2 semiconductor technical data KDV144F silicon epitaxial pin type diode revision no : 2 for antenna switches in mobile applications.features h low capacitance : c t =0.30[pf] (max.) h low series resistance : r s =1.3[ ? ] (max.) h small package . maximum rating (ta=25 ? ) tfsc dim millimeters b 0.80+0.10/-0.05 e 0.40 max 0.13 0.05 f 0.10 max g 0.25 max h a 1.00 0.05 + _ c 0.60 0.05 + _ d 0.30 0.05 + _ + _ e f cathode mark c d b a h g electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.30 pf series resistance r s i f =10ma, f=100mhz - - 1.3 ? esd-capability * - c=200pf, r=0 ? , both forward and reverse direction 1 pulse 100 - - v * failure cirterion : i r >100na at v r =30v. type name marking a1 downloaded from: http:///
2013. 1. 3 2/2 KDV144F revision no : 2 downloaded from: http:///
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