MBS6-T - mbs10-t creat by art - ideal for automated placement - reliable low cost construction utilizing molded plastic technique - high surge current capability - halogen-free according to iec 61249-2-21 packing code with suffix "g" means green compound (halogen-free) v rrm v v rms v v dc v i 2 ta 2 s c j pf t j c t stg c document number: ds_d0000160 version: a15 taiwan semiconductor 0.8a, 600v - 1000v glass passivated brid g e rectifiers features moisture sensitivity level: level 1, per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data maximum reverse current @ rated v r t j =25c t j =125c parameter symbol maximum rms voltage case: molded plastic body molding compound, ul flammability classification rating 94v-0 terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 35 mbs8-t mbs10-t a 600 polarity: polarity as marked on the body weight: 0.12 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) maximum repetitive peak reverse voltage marking code 420 unit v i r 5 100 a maximum dc blocking voltage maximum average forward rectified current on glass-epoxy p.c.b. on aluminum substrate i f(av) 0.5 0.8 a rating for fusing (t<8.3ms) note 1: pulse test with pw=300 s,1% duty cycle 5.08 typical junction capacitance per leg (note 2) 13 typical thermal resistance r jl r ja 20 85 maximum instantaneous forward voltage (note 1) i f = 0.4 a v f 1.0 600 800 1000 800 1000 700 560 c/w mbs mbs6 mbs8 mbs10 MBS6-T note 2: measure at 1.0mhz and applied reverse voltage of 4.0v dc. operating junction temperature range - 55 to +150 storage temperature range - 55 to +150
part no. note 1: "x" defines voltage from 600v (MBS6-T) to 1000v (mbs10-t) note 2: whole series with green compound (t a =25c unless otherwise noted) document number: ds_d0000160 version: a15 description packing packing code suffix g mbs10-t rcg mbsx-t (note 1, 2) rc rc ordering information 3,000 / 13" paper reel packing code mbs10-t part no. green compound ratings and characteristics curves packing code suffix package gmbs MBS6-T - mbs10-t taiwan semiconductor example example p/n packing code 0 0.2 0.4 0.6 0.8 1 0 20406080100120140160 average forward current (a) ambient temperature ( c) fig.1 maximum forward current derating curve aluminum substrate glass epoxy p.c.b. resistive of inductive load with heatsink 0 5 10 15 20 25 30 35 110100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine-wave 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current ( a) percent of rated peak reverse volyage(%) fig. 2 typical reverse characteristics t j =25 c t j =125 c 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics
min max min max a 4.50 4.90 0.177 0.193 b 0.56 0.84 0.022 0.033 c 3.60 5.00 0.142 0.197 d - 6.90 - 0.272 e 2.20 2.60 0.087 0.102 f 2.30 2.70 0.091 0.106 g - 0.20 - 0.008 h - 2.90 - 0.114 i 0.95 1.53 0.037 0.060 j 0.70 1.10 0.028 0.043 k 0.15 0.35 0.006 0.014 l 1.10 2.12 0.043 0.083 symbol a b c d e f p/n = marking code yw = date code f = factory code document number: ds_d0000160 version: a15 MBS6-T - mbs10-t taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) mbs 1.3 6.3 marking diagram suggested pad layout unit (mm) 1.7 0.9 4.4 8.1 unit (inch) 0.067 0.035 0.173 0.319 0.051 0.248 0 5 10 15 20 25 30 0.1 1 10 100 capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vslg=50mvp-p
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