TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 1 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com applications ? small cell base station ? microcell base station driver ? active antenna ? general purpose applications 16 pin 3x3mm qfn functional block diagram product features ? operating frequency range: dc to 4 ghz ? output power (p sat ): 5 w ? drain efficiency: 68% ? linear gain: 19 db ? package dimensions: 3 x 3 x 0.85 mm general description the TQP0102 is a wide band over- molded qfn discrete gan power amplifier. the device is a single stage unmatched power amplifier transistor. the TQP0102 can be used in doherty architecture for the final stage of a base station power amplifier for s mall cell applications. the TQP0102 can also be used in micro ce ll and active antenna applications. the wide bandwidth of the TQP0102 makes it suitable for many different applications from dc to 4 ? ghz. TQP0102 can deliver p sat of 5 w at 28 to 32 v operation. lead-free and rohs compliant. ordering information part no. eccn description TQP0102 ear99 5 w, dc to 4 ghz, gan pa TQP0102-pcb ear99 2.5-2.7 ghz evaluation board pin configuration pin no. label 1, 3-9, 12-16 n/c 2 rf in, v g 10-11 rf out, v d backside paddle rf/dc gnd 9 10 11 12 4 3 2 1 16 15 14 13 5 6 7 8 n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c v g , rf in v d , rf out v d , rf out n/c
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 2 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter rating gate voltage (v g ) ?6 v drain voltage (v d ) +40 v peak rf input power 29 dbm vswr mismatch, p1db pulse (20% duty cycle, 100 s width), t = 25c 10:1 storage temperature ?65 to +150c operation of this device outside the parameter rang es given above may cause permanent damage. recommended operating conditions parameter min typ max units operating temperature ?40 +105 c gate voltage (v g ) ?2.9 v drain voltage (v d ) 32 v quiescent current (i cq ) 25 ma t ch for >10 6 hours mttf 225 c electrical performance is measured under conditions noted in the electrical specifications table. specification s are not guaranteed over all recommended operating condition s. electrical specifications test conditions unless otherwise noted: v g = ?2.67 v, v d = 32 v, i cq = 25 ma, t = 25c, 2.6 ghz single-ended applicatio n circuit parameter conditions min typ max units frequency range dc 4000 mhz quiescent current 20 25 30 ma linear gain p out = 25 dbm, pulsed (10% duty cycle, 100 s width) 17 19 db p3db pulsed (10% duty cycle, 100 s width) 36.5 37 dbm drain efficiency p3db 60 65 % input return loss measured in evb 10 db
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 3 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal information parameter conditions value units thermal resistance at average power ( jc ) t c = 85c, t ch = 114.1c, cw: p diss = 1.59 w, p out = 0.35 w 18.3 c/w thermal resistance at saturated power ( jc ) t c = 85c, t ch = 135.1c, cw: p diss = 2.65 w, p out = 5.59 w 18.9 c/w notes: 1. thermal resistance measured to package backside. median lifetime 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime (hours) channel temperature (c) median lifetime vs. channel temperature
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 4 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout bill of materials reference des. value description manuf. part number c1, c4, c5, c6, c7 22 pf capacitor, 0603 atc 600s220bt250xt c2, c3 0.7 pf capacitor, 0.5 pf, 0603 atc 600s005bt250xt c8 10 f capacitor, 6.3 v, 0612 tdk c1632x5r0j106m130ac c9 1 f capacitor, 1812 avx 18121c105kat2a c10 220 f capacitor, 10x10 mm, 50 v united chem con emvy500ada221mja0g r1 2.5 ? resistor, 2.5 ? , 0603 venkel cr0603 r2 75 ? resistor, 75 ? , 0805 venkel cr0805 r3 10 ? resistor, 1/10 w 1% 0603 venkel erj-3ekf10r0v r8 1 k ? resistor, 0805 venkel res 1k ohm 0805 r3, r4 10 ? resistor, 1/10 w 1% 0603 venkel erj-3ekf10r0v r5, r6 dnp r7 dnp
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 5 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance plots test conditions unless otherwise noted: v d = 32 v, i cq = 25 ma, t = 25c, 2.6 ghz single-ended applicatio n circuit 14 15 16 17 18 19 20 21 22 18 20 22 24 26 28 30 32 34 36 38 gain (db) output power (dbm) gain vs. output power v g = ?2.67 v, v d = 32 v, i cq = 25 ma pulse cw: duty cycle = 20%, pulse period = 500 s temp. = +25c 2500 mhz 2600 mhz 2700 mhz 0 10 20 30 40 50 60 70 80 18 20 22 24 26 28 30 32 34 36 38 drain efficiency (%) output power (dbm) drain efficiency vs. output power v g = ?2.67 v, v d = 32 v, i cq = 25 ma pulse cw: duty cycle = 20%, pulse period = 500 s temp. = +25c 2500 mhz 2600 mhz 2700 mhz 14 15 16 17 18 19 20 21 22 25 26 27 28 29 30 31 32 33 gain (db) average output power (dbm) gain vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?2.63 v, v d = 32 v, i cq = 25 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c 0 10 20 30 40 50 60 70 80 25 26 27 28 29 30 31 32 33 drain efficiency (%) average output power (dbm) drain efficiency vs. average output power v g = ?2.63 v, v d = 32 v, i cq = 25 ma wcdma, par = 8 db @ 0.01% ccdf 2500 mhz 2600 mhz 2700 mhz temp. = +25c 32 33 34 35 36 37 38 39 25 26 27 28 29 30 31 32 33 peak power at 0.01% ccdf (db) average output power (dbm) peak power vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?2.63 v, v d = 32 v, i cq = 25 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 25 26 27 28 29 30 31 32 33 acpr (dbc) average output power (dbm) acpr vs. average output power 2500 mhz 2600 mhz 2700 mhz v g = ?2.63 v, v d = 32 v, i cq = 25 ma wcdma, par = 8 db @ 0.01% ccdf temp. = +25c
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 6 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com performance plots test conditions unless otherwise noted: v d = 32 v, i cq = 25 ma, t = 25c, 2.6 ghz single-ended applicatio n circuit -20 -15 -10 -5 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 21 (db) frequency (ghz) small signal gain vs. frequency temp. = +25c -30 -25 -20 -15 -10 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 s 11 , s 22 (db) frequency (ghz) return loss vs. frequency temp. = +25c irl orl
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 7 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com load pull plots test conditions unless otherwise noted: v d = 32 v, i cq = 25 ma, t = 25c, pulse cw (duty cycle = 20%, pul se period = 500 s)
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 8 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin configuration and description pin no. label description 1, 3, 4, 5, 6, 7, 8, 9, 12, 13, 14, 15, 16 n/c no connection 2 rf in, v g rf input, gate bias 10, 11 rf out, v d rf output, drain bias backside paddle rf/dc gnd rf/dc ground 9 10 11 12 4 3 2 1 16 15 14 13 5 6 7 8 n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c n/c v g , rf in v d , rf out v d , rf out n/c
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 9 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com package marking and dimensions marking: part id ? 0102 year/workweek ? yyww ?m? + lot number ? mzzz notes: 1. all dimensions are in millimeters. angles are in degrees. pcb mounting pattern notes: 1. all dimensions are in millimeters. angles are in degrees. 0102 yyww mzzz
TQP0102 5 w, dc to 4 ghz, gan power transistor preliminary datasheet: rev e 09-28-15 - 10 of 10 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: class 1a value: passes 250 v test: human body model (hbm) standard: jedec standard js-001-2012 esd rating: class c3 value: passes 1000 v test: charged device model (cdm) standard: jedec standard jesd22-c101f solderability compatible with both lead- free (260c maximum reflow temperature) and tin/lead (245c maximum reflow temperature) soldering processes. contact plating: nipdau rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazar dous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating msl rating: level 3 test: 260c convection reflow standard: jedec standard ipc/jedec j-std-020d.1 eccn us department of commerce ear99 contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: btsapplications@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding th e information contained herein. triquint assumes no responsibility or liability wha tsoever for any of the information contained herein . triquint assumes no responsibility or liability wha tsoever for the use of the information contained he rein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated wit h such information is entirely with the user. all information containe d h erein is subject to change without notice. custome rs should obtain and verify the latest relevant information before p lacing orders for triquint products. the information contained herein or any use of such information does not grant, expl icitly or implic itly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard t o such information itself or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death.
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