APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 1 C 7 nt c2 out vbus nt c1 0/vbu s q1 g1 q2 s1s2 g2 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitive to electrostatic disc harge. proper handling proc edures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 900 v i d continuous drain current t c = 25c 59 a t c = 80c 44 i dm pulsed drain current 150 v gs gate - source voltage 20 v r dson drain - source on resistance 60 m p d maximum power dissipation t c = 25c 462 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy 2.9 mj e as single pulse avalanche energy 1940 application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant phase leg series & sic parallel diodes s u p er junction mosfet power module v dss = 900v r dson = 60m max @ tj = 25c i d = 59a @ tc = 25c downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 2 C 7 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 900v t j = 25c 200 a v gs = 0v,v ds = 900v t j = 125c 1000 r ds(on) drain C source on resistance v gs = 10v, i d = 52a 50 60 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 6ma 2.5 3 3.5 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v ; v ds = 100v f = 1mhz 13.6 nf c oss output capacitance 0.66 q g total gate charge v gs = 10v v bus = 400v i d = 52a 540 nc q gs gate C source charge 64 q gd gate C drain charge 230 t d(on) turn-on delay time inductive switching (125c) v gs = 10v v bus = 600v i d = 52a r g = 3.8 70 ns t r rise time 20 t d(off) turn-off delay time 400 t f fall time 25 e on turn-on switching energy inductive switching @ 25c v gs = 10v ; v bus = 600v i d = 52a ; r g = 3.8 1.8 mj e off turn-off switching energy 1.5 e on turn-on switching energy inductive switching @ 125c v gs = 10v ; v bus = 600v i d = 52a ; r g = 3.8 2.52 mj e off turn-off switching energy 1.7 r thjc junction to case thermal resistance 0.27 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 350 a i f dc forward current t c = 80c 90 a v f diode forward voltage i f = 90a 1.9 2.3 v i f = 180a 2.2 i f = 90a t j = 125c 1.7 t rr reverse recovery time i f = 90a v r = 667v di/dt = 600a/s t j = 25c 290 ns t j = 125c 390 q rr reverse recovery charge t j = 25c 2 c t j = 125c 7 r thjc junction to case thermal resistance 0.45 c/w downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 3 C 7 sic parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 64 400 a t j = 175c 112 2000 i f dc forward current tc = 100c 20 a v f diode forward voltage i f = 20a t j = 25c 1.6 1.8 v t j = 175c 2.3 3 q c total capacitive charge i f = 20a, v r = 1200v di/dt =1000a/s 160 nc c total capacitance f = 1mhz, v r = 200v 192 pf f = 1mhz, v r = 400v 138 r thjc junction to case thermal resistance 1 c/w thermal and package characteristics symbol characteristic min max unit v isol r ms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 4 C 7 sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com typical coolmos performance curve hard switching zcs zvs 0 100 200 300 400 20 25 30 35 40 45 50 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =600v d=50% r g =3.8 ? t j =125c t c =75c switching energy vs current eon eoff 0 1 2 3 4 10 20 30 40 50 60 70 80 i d , drain current (a) eon and eoff (mj) v ds =600v r g =3.8 ? t j =125c l=100h on resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds(on) , drain to source on resistance (normalized) switching energy vs gate resistance eon eoff 0 1 2 3 4 5 6 0 5 10 15 20 gate resistance (ohms) switching energy (mj) v ds =600v i d =52a t j =125c l=100h downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 5 C 7 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 0 80 160 240 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =20, 8v 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 900 925 950 975 1000 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage maximum safe operating area 10 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r d s on single pulse t j =150c t c =25c ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =52a t j =25c downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 6 C 7 typical parallel sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r reverse voltage c, capacitance (pf) coolmos? comprise a new family of transistors developed by in fineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
APTC90AM60SCTG APTC90AM60SCTG C rev 2 october, 2013 www.microsemi.com 7 C 7 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer s final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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