this is information on a product in full production. january 2016 docid024699 rev 3 1/8 8 STPSC10TH13TI dual 650 v power schottky sili con carbide diode in series datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? suited for specific bridge-less topologies ? high forward surge capability ? insulated package: ? capacitance: 7 pf ? insulated voltage: 2500 v rms description the sic diode is an ultrahigh performance power schottky diode. it is ma nufactured us ing a silicon carbide substrate. the wide band gap material allows the design of a schottky diode structure with a 650 v rating. due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. the minimal capacitive turn-off behavior is independent of temperature. especially suited for use in specific bridge-less topologies, this dual 650 v rectifier will boost the performance in hard switching conditions. its high forward surge capability ensures a good robustness during transient phases. . , q v x o d w h g 7 2 $ % table 1. device summary (per diode) symbol value i f(av) 10 a v rrm 650 v t j (max.) 175 c www.st.com
characteristics STPSC10TH13TI 2/8 docid024699 rev 3 1 characteristics when the diodes are used simultaneously: ? t j(diode1) = p (diode1) x r th(j-c) (per diode) + p (diode2) x r th(c) to evaluate the conduction loss es use the following equation: p = 1.35 x i f(av) + 0.115 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c unless otherwise specified, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 650 v i f(rms) forward rms current 22 a i f(av) average forward current t c = 70 c (1) , dc current 1. value based on r th(j-c) max (per diode) 10 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 125 c t p = 10 s sinusoidal, t c = 25 c 90 80 470 a i frm repetitive peak forward current t c = 70 c (1) , ? = 0.1 41 a t stg storage temperature range -55 to +175 c t j operating junction temperature (2) 2. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance symbol parameter typ. max. unit r th(j-c) junction to case per diode 3.1 4.1 c/w to ta l 1 . 8 2 . 3 r th(c) 0.5 c/w table 4. static electrical characteristics (per diode) symbol parameter tests conditions min. typ. max. unit i r (1) 1. pulse test: t p = 10 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm -9100 a t j = 150 c - 85 425 v f (2) 2. pulse test: t p = 500 s, ? < 2% forward voltage drop t j = 25 c i f = 10a - 1.56 1.75 v t j = 150 c - 1.98 2.5 dptot dtj --------------- 1 rth j a ? ?? ------------------------- - ?
docid024699 rev 3 3/8 STPSC10TH13TI characteristics table 5. dynamic electrical characteristics (per diode) symbol parameter test conditions typ. unit q cj (1) total capacitive charge v r = 400 v 28.5 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 480 pf v r = 400 v, t c = 25 c, f = 1 mhz 48 1. most accurate value fo r the capacitive charge: 4 f m y 5 g y 5 f m ? 9 2 8 7 figure 1. forward voltage drop versus forward current (typical values, low level, per diode) figure 2. forward voltage drop versus forward current (typical values, high level, per diode) 7 d ? & 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 7 d ? & 9 ) 0 9 , ) 0 $ 7 d ? & 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 7 d ? & 9 ) 0 9 , ) 0 $ figure 3. reverse leakage current versus reverse voltage applied (typical values, per diode) figure 4. peak forward current versus case temperature (per diode) ( ( ( ( ( ( 9 5 9 7 m ? & 7 m ? & 7 m ? & , 5 ? $ , 0 $ 7 w s 7 w s 7 & ? &
characteristics STPSC10TH13TI 4/8 docid024699 rev 3 figure 5. junction capacitance versus reverse voltage applied (typical values, per diode) figure 6. relative variation of thermal impedance junction to case versus pulse duration & m s ) ) 0 + ] 9 2 6 & p 9 5 0 6 7 m ? & 9 5 9 ( ( ( ( ( ( ( 6 l q j o h s x o v h w s v = w k m f 5 w k m f figure 7. non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) figure 8. total capacitive charges versus reverse voltage applied (typical values, per diode) ( ( ( ( ( ( ( 7 d ? & 7 d ? & w s v , ) 6 0 $ 9 5 9 4 & m q &
docid024699 rev 3 5/8 STPSC10TH13TI package information 2 package information ? epoxy meets ul94, v0 ? lead-free package ? cooling method: by conduction (c) ? recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. 2.1 insulated to-220ab package information figure 9. insulated to -220ab package outline & e f ) ? , / $ d d % h e , o o f 0
package information STPSC10TH13TI 6/8 docid024699 rev 3 table 6. insulated to-220ab package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m2.60 0.102
docid024699 rev 3 7/8 STPSC10TH13TI ordering information 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STPSC10TH13TI stpsc 10th13ti insulated to-220ab 2.3g 50 tube table 8. document revision history date revision changes 24-jun-2013 1 first issue. 07-nov-2013 2 updated figure 1 and figure 2. 05-jan-2016 3 updated table 7 . format updated to current standard.
STPSC10TH13TI 8/8 docid024699 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics ? all rights reserved
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