maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 800 0.39 0.45 0.5 20 200 100 2.1 3 3.9 ultra low r ds ( on ) low miller capacitance ultra low gate charge, q g avalanche energy rated to-247 package characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) drain-source on-state resistance 2 (v gs = 10v, i d = 7.1a) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = v dss , v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 680 a) "coolmos ? comprise a new family of transistors developed by in? neon technologies ag. "coolmos" is a trade- mark of in? neon technologies ag" 050-7136 rev c 3-2012 apt11n80bc3 800v 11a 0.45 symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 640v, i d = 11a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj apt11n80bc3 800 11 33 20 30 156 1.25 -55 to 150 260 50 11 0.2 470 super junction mosfet downloaded from: http:///
dynamic characteristics single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.900.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 11a ) reverse recovery time (i s = 11a , dl s /dt = -100a/ s, v r = 640v) reverse recovery charge (i s = 11a , dl s /dt = -100a/ s, v r = 640v) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 11 33 1 1.2 550 10 6 symbol r jc r ja min typ max 0.80 62 unit c/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 11a @ 25c resistive switching v gs = 10v v dd = 400v i d = 11a @ 25c r g = 7.5 inductive switching @ 25c v dd = 533v, v gs = 15v i d = 11a, r g = 5 inductive switching @ 125c v dd = 533v v gs = 15v i d = 11a, r g = 5 min typ max 1585 770 18 60 8 30 25 15 70 80 7 10 165 50 305 65 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 194mh, r g = 25 , peak i l = 2.2a 5 dv / dt numbers re ? ect the limitations of the test circuit rather than the device itself. i s - i d 11a di / dt 700a/ s v r v dss t j 150 c 6 eon includes diode reverse recovery. see ? gures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f apt reserves the right to change, without notice, the speci? cations and information contained herein. apt11n80bc3 050-7136 rev c 3-2012 downloaded from: http:///
050-7136 rev c 3-2012 apt11n80bc3 typical performance 5v 4v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle 6v normalized to v gs = 10v @ 5.5a 4540 35 30 25 20 15 10 50 1210 86 4 2 0 3.02.5 2.0 1.5 1.0 0.5 0 3025 20 15 10 50 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 1.21.1 1.0 0.9 0.8 0.7 0.6 i d = 5.5a v gs = 10v 0.3450.455 0.003750.101 power (watts) rc model junction temp. ( c) case temperature v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) downloaded from: http:///
apt11n80bc3 050-7136 rev c 3-2012 typical performance c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 20 40 60 80 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 3310 51 .1 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100 s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 5 w t j = 125c l = 100 h e on e off t r t f switching energy ( m j) t d(on) and t d(off) (ns) switching energy ( m j) t r and t f (ns) 5 8 11 14 17 20 5 8 11 14 17 20 5 8 11 14 17 20 0 5 10 15 20 25 30 35 40 45 50 v dd = 533v i d = 11a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 400v v ds = 160v v ds = 640v i d = 11a t d(on) t d(off) e on e off 7060 50 40 30 20 10 0 500400 300 200 100 0 v dd = 533v r g = 5 w t j = 125c l = 100 h v dd = 533v r g = 5 w t j = 125c l = 100 h e on includes diode reverse recovery. 10,000 1,000 100 10 1 100 10 1 operation here limited by r ds (on) 4030 20 10 0 500400 300 200 100 0 downloaded from: http:///
050-7136 rev c 3-2012 apt11n80bc3 typical performance to - 247 package outline figure 18, turn-on switching waveforms and de? nitions figure 19, turn-off switching waveforms and de? nitions i c d.u.t. apt15df60b v ce figure 20, inductive switching test circuit v dd g 10% 5% 10% t d(on) t r 90% collector current collector voltage gate voltage t j = 125 c 5 % switching energy t j = 125 c 90% t d(off) 0 t f 90% 10% gate voltage collector current collector voltage switching energy downloaded from: http:///
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