isahaya electronics corporation INJ0203BC1 silicon p-channel mosfet description INJ0203BC1 is a silicon p-channel mosfet. this product is most suitabl e for use such as portable machinery, because of low voltage drive and low on resistance. feature ?input impedance is hi gh, and not necessary to consider a drive electric current. ?drive voltage -2.5v ?low on resistance. r ds(on) =100m(typ). ?small package for easy mounting. application switching outline drawing unit 0.13 0 0.1 0.8 1.1 0.4 0.65 1.5 0.65 2.8 0.95 0.95 1.90 2.8 electrical characteristicsta=25 parameter symbol test condition limit unit min typ max drain-source breakdown voltage v (br)dss i d =-100a, v gs =0v -20 - - v gate-source leak current i gss v gs =10v, v ds =0v - - 10 a zero gate voltage drain current i dss v ds =-20v ,v gs =0v - - -10 a gate threshold voltage v th i d =-250a, v ds =v gs -0.4 - -1.2 v forward transfer admittance | y fs | v ds =-10v, i d =-1a - 3.0 - s static drain-source on-state resistance r ds(on) i d =-1a, v gs =-4.5v - 100 - m input capacitance c iss v ds =-10v, v gs =0v, f=1mhz - 340 - pf output capacitance c oss - 90 - pf switching time t on v dd =-15v, i d =-1a v gs =0-10v - 230 - ns t off - 940 - ns maximum ratingsta=25 symbol parameter rating unit v dss drain-source voltage -20 v v gss gate-source voltage -10 v i d drain current(dc) -2 a i dp drain current(pulse) 1 -4 a p d total power dissipation 200 mw t ch channel temperature +150 t stg storage temperature -55+150 1pwQ10s, duty cycleQ1% jeitasc-59 jedecsimilar to to-236 terminal connecter ?gate ?source ?drain marking ?j equivalent circuit g s d
isahaya electronics corporation INJ0203BC1 silicon p-channel mosfet typical characteristics rds(on)-vgs 0.01 0.1 1 10 -10 -8 -6 -4 -2 0 gate-source voltage vgs(v) drain-source on resistance rds(on)() id=-1a ta=100 75 25 -25 id-vgs -0.001 -0.01 -0.1 -1 -10 0 -0.5 -1 -1.5 -2 -2.5 -3 gate-source voltage vgs(v) drain current id(a) vds=-10v ta=100 75 25 -25 rds(on)-id 0.01 0.1 1 0 -0.5 -1 -1.5 -2 -2.5 -3 drain current id(a) drain-source on resistance rds(on)() vgs=-4.5v ta=100 75 25 -25 |yfs|-id 0.1 1 10 0 -0.5 -1 -1.5 -2 -2.5 -3 drain current id(a) forward transfer admittance |yfs|(s) vds=-10v ta=100 75 25 -25 idr-vds -0.001 -0.01 -0.1 -1 -10 00.511.52 drain-source voltage vds(v) reverse drain current idr(a) vgs=0v ta=100 75 25 -25 vth-ta -1.5 -1 -0.5 0 -50 -25 0 25 50 75 100 125 ambinet temperature ta() gate threshold voltage vth(v) id=250ua vds=vgs
isahaya electronics corporation INJ0203BC1 silicon p-channel mosfet typical characteristics c-vds 10 100 1000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ta=25 vgs=0v coss ciss t-id 1 10 100 1000 10000 -0.01 -0.1 -1 -10 drain current id (a) switching time t (ns) ta=25 vdd=-15v vgs=-10v rg=50,pw=10us t of f tf t on tr aso -0.001 -0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100 drain-source voltagevds (v) drain currentid (a) 1msec 1sec 100msec 10msec rds(on) limited vgs=-8.0v dc[pd=200mw] ta=25 single pulse package mounted on glass-epoxy substrate. (9*19*1mm) [pd=400mw] v dd =-15v duty Q 1% input:tr,tf<10ns common source ta=25 v ds(on -10v 0v 90% 10% v dd 90% 10% ton tof f t r t f 0 -10v 10 s switching time test circui t input waveform output waveform in 50 ou t r l v dd
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. mar.2013
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