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strong ir fet? IRFR7540PBF irfu7540pbf hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature d-pak IRFR7540PBF i-pak irfu7540pbf g d s gate drain source d g s d g s v dss 60v r ds(on) typ. 4.0m ? ? max 4.8m ? ? i d (silicon limited) 110a ? i d (package limited) 90a base part number package type standard pack orderable part number form quantity IRFR7540PBF tube 75 IRFR7540PBF tape and reel 2000 irfr7540trpbf irfu7540pbf i-pak tube 75 irfu7540pbf d-pak tape and reel left 3000 irfr7540trlpbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 66a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) limited by package downloaded from: http:///
? irfr/u7540pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 110 ? a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 78 i dm pulsed drain current ?? 440* p d @t c = 25c maximum power dissipation 140 w linear derating factor 0.95 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 160 mj e as (thermally limited) single pulse avalanche energy ?? 273 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 1.05 c/w ? r ? ja junction-to-ambient (pcb mount) ? CCC 50 r ? ja junction-to-ambient ? CCC 110 i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 90 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 48 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 4.0 4.8 v gs = 10v, i d = 66a ? CCC 5.2 CCC v gs = 6.0v, i d = 33a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 2.4 CCC ?? m ??? notes: ?? calculated continuous current based on maximum allowable j unction temperature. bond wire current limit is 90a by source bonding technology. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 72 h, r g = 50 ? , i as = 66a, v gs =10v. ?? i sd ? 66a, di/dt ? 1190a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994.please refer to application note to an-994 : http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 23a, v gs =10v. * pulse drain current is limited at 360a by source bonding technology. downloaded from: http:///
? irfr/u7540pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 200 CCC CCC s v ds = 10v, i d =66a q g total gate charge CCC 86 130 i d = 66a q gs gate-to-source charge CCC 22 CCC v ds = 30v q gd gate-to-drain charge CCC 27 CCC v gs = 10v q sync total gate charge sync. (qgC qgd) CCC 59 CCC t d(on) turn-on delay time CCC 8.7 CCC ns v dd = 30v t r rise time CCC 38 CCC i d = 66a t d(off) turn-off delay time CCC 59 CCC r g = 2.7 ?? t f fall time CCC 32 CCC v gs = 10v ? c iss input capacitance CCC 4360 CCC pf ? v gs = 0v c oss output capacitance CCC 410 CCC v ds = 25v c rss reverse transfer capacitance CCC 260 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 410 CCC v gs = 0v, vds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 530 CCC v gs = 0v, vds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 110 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 440* integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 66a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 11 CCC v/ns t j = 175c,i s = 66a,v ds = 60v t rr reverse recovery time CCC 34 CCC ns t j = 25c v dd = 51v CCC 37 CCC t j = 125c i f = 66a, q rr reverse recovery charge CCC 36 CCC nc t j = 25c di/dt = 100a/s ??? CCC 47 CCC t j = 125c ? i rrm reverse recovery current CCC 1.9 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? irfr/u7540pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 fig 6. normalized on-resistance vs. temperature fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 66a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v vds= 12v i d = 66a fig 8. typical gate charge vs. gate-to-source voltage downloaded from: http:///
? irfr/u7540pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -20 20 60 100 140 180 t j , temperature ( c ) 64 68 72 76 80 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 1 02 03 04 05 06 0 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e n e r g y ( j ) 0 50 100 150 200 i d , drain current (a) 2 5 8 11 14 17 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc limited by package downloaded from: http:///
? irfr/u7540pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 66a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
? irfr/u7540pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 fig 21. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 160 180 q r r ( n c ) i f = 66a v r = 51v t j = 25c t j = 125c fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 100a id = 250a id = 1.0ma id = 1.0a 0 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 44a v r =51v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 66a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 20 40 60 80 100 120 140 160 180 q r r ( n c ) i f = 44a v r = 51v t j = 25c t j = 125c downloaded from: http:///
? irfr/u7540pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? irfr/u7540pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline dimensio ns are shown in millimeters (inches) d-pak (to-252aa) part marking information international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 34 12 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional) downloaded from: http:///
? irfr/u7540pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 i-pak (to-251aa) package outline dimens ions are shown in millimeters (inches) i-pak (to-251aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 78 line a logo international rectifier or product (optional) p = designates lead-free a = assembly site code irfu120 part number week 19 date code year 1 = 2001 rectifier international logo assembly lot code irfu120 56 date code part number lot code assembly 56 78 year 1 = 2001 week 19 119a indicates lead-free" assembled on ww 19, 2001 in the assembly line "a" note: "p" in assembly line position example: with assembly this is an irfu120 lot code 5678 downloaded from: http:///
? irfr/u7540pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information di mensions are shown in millimeters (inches) downloaded from: http:///
? irfr/u7540pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback december 17, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d-pak msl1 i-pak n/a rohs compliant yes revision history date comment 11/5/2014 ?? updated e as (l =1mh) = 273mj on page 2 ?? updated note 10 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 23a, v gs =10v. on page 2 ?? updated package outline on page 9 & 10 12/17/2014 ?? added irfr7540trlpbf in orderable part number on page 1. downloaded from: http:///

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