dec2011.version1.0 magnachipsemiconductorltd . 1 mdp13n50b/MDF13N50Bnchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol mdp13n50b MDF13N50B unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 13 13* a t c =100 o c 8.2 8.2* a pulseddraincurrent (1) i dm 52 52* a powerdissipation t c =25 o c p d 187 41 w derateabove25 o c 1.49 0.33 w/ o c repetitiveavalancheenergy (1) e ar 18.7 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 580 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol mdp13n50b MDF13N50B unit thermalresistance,junctiontoambient (1) r ja 62.5 62.5 o c/w thermalresistance,junctiontocase (1) r jc 0.67 3.05 mdp13n50 b/MDF13N50B nchannelmosfet500v,13.0a,0.5 generaldescription themdp/f13n50busesadvancedmagnachip s mosfettechnology,whichprovideslowonstate resistance,highswitchingperformanceand excellentquality. mdp/f13n50bissuitabledeviceforsmps,hid andgeneralpurposeapplications. features v ds =500v i d =13.0a @v gs =10v r ds(on) 0.5 @v gs =10v applications powersupply pfc ballast
dec2011.version1.0 magnachipsemiconductorltd . 2 mdp13n50b/MDF13N50Bnchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus mdp13n50bth 55~150 o c to220 tube halogenfree MDF13N50Bth 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =6.5a 0.39 0.5 forwardtransconductance g fs v ds =40v,i d =6.5a 13 s dynamiccharacteristics totalgatecharge q g v ds =400v,i d =13.0a,v gs =10v (3) 27 nc gatesourcecharge q gs 6.3 gatedraincharge q gd 8.6 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1459 pf reversetransfercapacitance c rss 7.4 outputcapacitance c oss 174 turnon delaytime t d(on) v gs =10v,v ds =250v,i d =13.0a, r g =25 (3) 21 ns risetime t r 47 turnoffdelaytime t d(off) 131 falltime t f 54 drainsourcebodydiodecharacteristics maximumcontinuousdraintosource diodeforwardcurrent i s 13 a sourcedraindiodeforwardvoltage v sd i s =13.0a,v gs =0v 1.4 v bodydiodereverserecoverytime t rr i f =13.0a,dl/dt=100a/s (3) 325 ns bodydiodereverserecoverycharge q rr 2.9 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth300us,dutycycle2%,pulse widthlimitedbyjunctiontemperaturet j(max) =150c. 3.i sd 13.0a,di/dt200a/us, v dd bv dss , r g =25,startingt j =25c 4.l=6.2mh,i as =13.0a,v dd =50v,,r g =25,startingt j =25c
dec2011.version1.0 magnachipsemiconductorltd . 3 mdp13n50b/MDF13N50Bnchannelmosfet500v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =5.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 3 4 5 6 7 0.1 1 10 55 25 150 *notes; 1.vds=30v i d (a ) v gs [v] 5 10 15 20 25 30 0.25 0.50 0.75 1.00 v gs =10v v gs =20v r d s (o n ) [ ] i d ,draincurrent[a] 0 5 10 15 20 25 0 5 10 15 20 25 30 35 notes 1.250 ? spulsetest 2.t c =25 v gs =5.0v =5.5v =6.0v =7.0v =8.0v =10.0v =15.0v i d ,d ra in c u rre n t[a ] v ds ,drainsourcevoltage[v]
dec2011.version1.0 magnachipsemiconductorltd . 4 mdp13n50b/MDF13N50Bnchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea mdp13n50b(to220) fig.10 maximum drain current vs. case temperature fig.11transientthermalresponsecurve mdp13n50b(to220) fig.12 single pulse maximum power dissipation C mdp13n50b(to220) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 400v 250v 100v note:i d =13.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 1 10 0 200 400 600 800 1000 1200 1400 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d ,draincurrent[a] t c ,casetemperature[ ] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.67 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 singlepulse r thjc =0.67 /w t c =25 power(w) pulsewidth(s)
dec2011.version1.0 magnachipsemiconductorltd . 5 mdp13n50b/MDF13N50Bnchannelmosfet500v fig.13maximumsafeoperatingarea MDF13N50B(to220f) fig.14 single pulse maximum power dissipation C MDF13N50B(to220f) fig.15transientthermalresponsecurve MDF13N50B(to220f) 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 singlepulse r thjc =3.0 /w t c =25 power(w) pulsewidth(s) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =3.0 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec]
dec2011.version1.0 magnachipsemiconductorltd . 6 mdp13n50b/MDF13N50Bnchannelmosfet500v physicaldimensions 3leads,to220 dimensionsareinmillimetersunlessotherwisespec ified
dec2011.version1.0 magnachipsemiconductorltd . 7 mdp13n50b/MDF13N50Bnchannelmosfet500v physicaldimension 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
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