APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 1 C 6 s3 g3 s4 g4 nt c2 s1 g1 out2 out1 vbus q1 q2 s2 g2 0/vbu s nt c1 q3q4 out1 out2 ntc1 ntc2 g3s3 vbus g1 s1 g4g2 s2 0/vbus s4 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed. see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 46 i d continuo us drain current t c = 80c 34 i dm pulsed drain current 184 a v gs gate - source voltage 30 v r dson drain - source on resistance 90 m ? p d maximum power dissipation t c = 25c 357 w i ar avalanche current (repetitive and non repetitive) 46 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 500v r dson = 75m ? typ @ tj = 25c i d = 46a @ tc = 25c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? fredfets - low r dson - low input and miller capacitance - low gate c harge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant f ull - bridge mosfet power module downloaded from: http:///
APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 2 C 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 500v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 500 a r ds(on) drain C source on resistance v gs = 10v, i d = 23a 75 90 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gs s gate C source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 5600 c oss output capacitance 1200 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 90 pf q g total gate charge 123 q gs gate C source charge 33 q gd gate C drain charge v gs = 10v v bus = 250v i d = 46a 65 nc t d(on) tur n-o n delay ti me 18 t r rise time 35 t d(off) turn-off delay time 87 t f fall time inductive switching @ 125c v gs = 15v v bus = 333v i d = 46a r g = 5 ? 77 ns e on turn-on switching energy 755 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 726 j e on turn-on switching energy 1241 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 46a, r g = 5 ? 846 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 46 i s continuo us so urce c urrent (body diode) tc = 80c 34 a v sd diode forward voltage v gs = 0v, i s = - 46a 1.3 v dv/dt peak diode recovery x 15 v/ns t j = 25c 233 t rr reverse recovery time t j = 125c 499 ns t j = 25c 1.9 q rr reverse recovery charge i s = - 46a v r = 333v di s /dt = 100a/s t j = 125c 5.7 c x dv/dt numbers reflect the limitations of the circuit rather than t he device itself. i s - 46a di/dt 700a/s v r v dss t j 150c downloaded from: http:///
APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 3 C 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.35 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more informa tion). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp4 package outline (dimensions in mm) al l d imensio ns marked " * " are t ol erenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 4 C 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse durati on 5.5v 6v 6.5v 7v 7.5v 8v 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =10&15v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 0 2 04 06 08 01 0 0 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 23a 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 5 C 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperatur e bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =23a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) limited b y r ds on maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =46a t j =25c downloaded from: http:///
APTM50HM75FTG APTM50HM75FTG C rev 2 july, 2006 www.microsemi.com 6 C 6 delay times vs current td(on) td(off) 0 20 40 60 80 100 10 20 30 40 50 60 70 i d , drain current (a) t d(on) and t d(off) (ns) v ds =333v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 10 20 30 40 50 60 70 i d , drain current (a) t r and t f (ns) v ds =333v r g =5 ? t j =125c l=100h hard switching zc s zvs 0 50 100 150 200 250 300 350 400 10 15 20 25 30 35 40 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =333v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage switching energy vs current e on e off 0 0.5 1 1.5 2 2.5 10 20 30 40 50 60 70 i d , drain current (a) switching energy (mj) v ds =333v r g =5 ? t j =125c l=100h e on e off e off 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 02 03 04 05 0 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =333v i d =46a t j =125c l=100h m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe ci ficatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5, 182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and fore ign patents pending. all rights reserved. downloaded from: http:///
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