DMP3030SN features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? lead free by design/rohs compliant (note 2) ? esd protected gate ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v drain current (note 1) steady state i d -0.7 a pulsed drain current (note 3) i dm -2.8 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient r ja 250 c/w operating and storage temperature range t j , t stg -65 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -10 a v ds = -30v, v gs = 0v gate-body leakage i gss ? ? 10 a v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -1.0 ? -3.0 v v ds = -10v, i d = -1.0ma static drain-source on-resistance r ds (on) ? 0.20 0.35 0.25 0.45 v gs = -10v, i d = -0.4a v gs = -4.5v, i d = -0.4a forward transfer admittance |y fs | ? 1 ? s v ds = -10v, i d = -0.4a diode forward voltage (note 5) v sd ? -0.8 -1.1 v v gs = 0v, i s = -0.7a dynamic characteristics input capacitance c iss ? 160 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 120 ? pf reverse transfer capacitance c rss ? 50 ? pf switching characteristics turn-on delay time t d ( on ) ? 10 ? ns v dd = -10v, i d = -0.4a, v gs = -5.0v, r gen = 50 turn-off delay time t d ( off ) ? 25 ? ns turn-on rise time t r ? 25 ? ns turn-off fall time t f ? 40 ? ns notes: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. sc59 top view internal schematic esd protected source equivalent circuit gate protection diode gate drain d g s 1 of 1 sales@zpsemi.com www.zpsemi.com
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