2012. 11. 27 1/4 semiconductor technical data KMD7D5P40QA p-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable forbattery protection circuit. features h v dss =-40v, i d =-7.5a. h drain-source on resistance. r ds(on) =30m ? (max.) @ v gs =-10v r ds(on) =37m ? (max.) @ v gs =-4.5v h super high dense cell design mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 gh l d a b1 dim 6.02 0.31.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note : *surface mounted on 1 ? 1 fr4 board, t ? 10sec 12 3 4 87 6 5 ss s g dd d d 12 3 4 87 6 5 kmd7d5p 40qa pin connection (top view) characteristic symbol rating unit drain source voltage v dss -40 v gate source voltage v gss ? 20 v drain current dc@ta=25 ? i d * -7.5 a pulsed i dp -30 a drain source diode forward current i s -30 a drain power dissipation dc@ta=25 ? p d * 2.0 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 62.5 ? /w downloaded from: http:///
2012. 11. 27 2/4 KMD7D5P40QA revision no : 2 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =-250 a -40 - - v drain cut-off current i dss v ds =-40v, v gs =0v - - -10 a gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 10 a gate threshold voltage v th v ds =v gs, i d =-250 a -1.0 - -3.0 v drain-source on resistance r ds(on)* v gs =-10v, i d =-3.8a - 24 30 m ? v gs =-4.5v, i d =-3.8a - 29 37 forward transconductance g fs* v ds =-10v, i d =-3.8a - 1.2 - s dynamic input capaclitance c iss v ds = 20v, f=mhz, v gs =0v - 1,480 - pf output capacitance c oss - 240 - reverse transfer capacitance c rss - 140 - gate resistance r g v gs =0v, v ds =0v, f=1mhz - 8 - ? total gate charge q g* v ds =-32v, v gs =-10v, i d =-7.5a - 32.0 - nc gate-source charge q gs* - 5.5 - gate-drain charge q gd* - 9.0 - turn-on delay time t d(on)* v dd =-20v, v gs =-10v i d =-7.5a, r g =4.7 ? - 11 - ns turn-on rise time t r* - 20 - turn-off delay time t d(off)* - 60 - turn-off fall time t f* - 22 - source-drain diode ratings source-drain forward voltage v sdf* v gs =0v, i dr =-7.5a, - - -1.2 v note) *pulse test : pulse width ? 300 k , duty cycle ? 2% downloaded from: http:///
2012. 11. 27 3/4 KMD7D5P40QA revision no : 2 -1 0- 2 - 3 - 4 - 5 -5 -10 -15 -20 -30 0 -3.5v v gs =-3.0v -4.0v drain - current i d (a) 0 0 10 30 -10 20 40 -20 -30 -40 drain- source on resistance r ds(on) (m ) 0 3010 20 40 -25 150 50 75 100 125 25 -50 0 -75 common source i d =-3.8a pulse test c common sourceta=25 pulse test junction temperature tj ( ) c fig1. i d - v ds drain current i d (a) drain - source voltage v ds (v) drain- source on resistance r ds(on) (m ) fig2. r ds(on) -i d fig4. r ds(on) - t j v gs =-4.5v v gs =-10v v gs =-4.5v v gs =-10v gate source volatage v gs (v) 0 0- 1 -15-10 -5 -20 -25 -30 -2 -3 -4 -5 common sourcev ds =v gs pulse test -75 -50 -25 0 50 100 75 125 150 25 0 -1 -4-2 -5-3 junction temperature tj ( ) c common sourcev gs =v ds i d =-250 a pulse test gate threshold voltage v th (v) drain current i d (a) fig3. i d - v gs fig5. v th - t j 25 c -55 c -5.0v -10v -4.5v t a =125 c -25 fig6. i s - v sdf -0.2 -0.1 -1 -0.01 -100 -10 -0.4 -0.8 -1.2 -1 -0.6 reverse drain current i s (a) source - drain forward voltage v sdf (v) tj=25 c tj = 125 c downloaded from: http:///
2012. 11. 27 4/4 KMD7D5P40QA revision no : 2 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area -10 0 -10 -2 -10 -2 -10 -1 -10 0 -10 1 -10 2 -10 -1 -10 2 -10 1 v gs = -10v single pulset a = 25 c dc 1s 10s 10ms 1ms 100 s r ds(on) limit 100ms gate - charge q g (nc) 0 -10 -6-2 -4 -8 28 21 71 4 03 5 fig7. q g - v gs gate - source voltage v gs (v) v ds = -32 v i d = -7.5 a f = 1mhz capacitance ( p f ) drain - source voltage v ds (v) fig8. c-v ds 10 0 10 2 10 3 10 4 53 0 15 20 ciss coss crss 25 square wave pulse duration tw (sec) 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 fig10. transient thermal response curve normalized effective transient thermal resistanc 0.1 0.01 0.02 0.05 d = 0.5 0.2 single t 1 t 2 p dm 1. duty cycle d = t 1 /t 2 2. per unit base = r thja =62.5 c/w downloaded from: http:///
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