elektronische bauelemente bcp55 1a , 60v npn silicon medium power transistor 11-aug-2014 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features for af driver and output stages high collector current low collector-emitter saturation voltage classification of h fe product-rank BCP55-16 range 100~250 package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current -continuous i c 1 a collector power dissipation p d 1.5 w typical thermal resistance r ja 83.3 c /w storage temperature t stg -65~+150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. max . unit test conditions collector-base breakdown voltage v (br)cbo 60 - v i c =0.1ma , i e =0 collector-emitter breakdown voltage v (br)ceo 60 - v i c = 10ma, i b =0 emitter-base breakdown voltage v (br)ebo 5 - v i e = 10 a, i c =0 collector cut-off current i cbo - 100 na v cb = 30v, i e =0 25 - v ce = 2v, i c = 5ma 100 250 v ce = 2v, i c = 150ma dc current gain h fe 25 - v ce = 2v, i c = 500ma collector-emitter saturation voltage 1 v ce(sat) - 0.5 v i c =500ma, i b = 50ma base-emitter voltage 1 v be(on) - 1 v v ce = 2v, i c = 500ma transition frequency f t 100 - mhz v ce =10v, i c =50ma, f=100mhz top view 1 2 3 4 a m b d l k f g h j e c millimeter millimeter ref. min. max. ref. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 sot-223
elektronische bauelemente bcp55 1a , 60v npn silicon medium power transistor 11-aug-2014 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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