bzm55-series document number 85597 rev. 2.0, 26-aug-10 vishay semiconductors www.vishay.com 1 9612315 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal zener diodes features ? saving space ? hermetic sealed parts ? electrical data iden tical with the devices bzt55..series/tzm..series ? fits onto sod-323/sod-110 footprints ? very sharp reverse characteristic ? low reverse current level ? very high stability ?low noise ? available with tighter tolerances ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? voltage stabilization mechanical data case: micromelf weight: approx. 12 mg packaging codes/options: tr/2.5 k per 7" reel, 12.5 k/box tr3/10 k per 13" reel, 10 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja 300 k/w p v 500 mw z-current i z p v /v z ma junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter test condition symbol value unit junction to ambient air mounted on epoxy-glass hard tissue, fig. 1 r thja 500 k/w junction tie point 35 m copper clad, 0.9 mm 2 copper area per electrode r thjl 300 k/w parameter test condition symbol min. ty p. max. unit forward voltage i f = 200 ma v f 1.5 v
www.vishay.com 2 document number 85597 rev. 2.0, 26-aug-10 bzm55-series vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics bzm55c.. notes: 1) t p 10 ms, t/t p > 1000 *) additionnal measurement of voltage group 9v1 to 75 % at 95 % v zmin. 35 na at t j 25 c part number zener voltage range 1) dynamic resistance te s t current temperature coefficient te s t current reverse leakage current v z at i zt r zjt at i zt , f = 1khz r zjk at i zk , f = 1khz i zt tk vz i zk i r at t amb = 25 c i r at t amb = 150 c at v r v ma %/k ma a v min. max. min. max. bzm55c2v4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 bzm55c2v7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 bzm55c3v0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1 bzm55c3v3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzm55c3v6 3.4 3.8 < 90 < 600 5 -0.08 - 0.05 1 < 2 < 40 1 bzm55c3v9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzm55c4v3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1 bzm55c4v7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 bzm55c5v1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1 bzm55c5v6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1 bzm55c6v2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzm55c6v8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzm55c7v5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzm55c8v2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzm55c9v1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzm55c10 * 9.4 0.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzm55c11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzm55c12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzm55c13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzm55c15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzm55c16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzm55c18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzm55c20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzm55c22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzm55c24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzm55c27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzm55c30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzm55c33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzm55c36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzm55c39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30 bzm55c43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzm55c47 * 44 50 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzm55c51 * 48 54 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzm55c56 * 52 60 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzm55c62 * 58 66 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzm55c68 * 64 72 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzm55c75 * 70 79 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
bzm55-series document number 85597 rev. 2.0, 26-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics bzm55b.. notes: 1) t p 10 ms, t/t p > 1000 *) additionnal measurement of voltage group 9v1 to 75 % at 95 % v zmin. 35 na at t j 25 c part number zener voltage range 1) dynamic resistance te s t current temperature coefficient te s t current reverse leakage current v z at i zt r zjt at i zt , f = 1khz r zjk at i zk , f = 1khz i zt tk vz i zk i r at t amb = 25 c i r at t amb = 150 c at v r v ma %/k ma a v min. max. min. max. bzm55b2v4 2.35 2.45 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 bzm55b2v7 2.64 2.76 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 bzm55b3v0 2.94 3.06 < 90 < 600 5 - 0.08 - 0.05 1 < 4 < 40 1 bzm55b3v3 3.24 3.36 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzm55b3v6 3.52 3.68 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzm55b3v9 3.82 3.98 < 90 < 600 5 - 0.08 - 0.05 1 < 2 < 40 1 bzm55b4v3 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 < 1 < 20 1 bzm55b4v7 4.6 4.80 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 bzm55b5v1 5 5.20 < 60 < 550 5 - 0.02 0.02 1 < 0.1 < 2 1 bzm55b5v6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 < 2 1 bzm55b6v2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzm55b6v8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzm55b7v5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 BZM55B8V2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzm55b9v1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzm55b10 * 9.8 10.20 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzm55b11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzm55b12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzm55b13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzm55b15 * 14.7 15.30 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzm55b16 * 15.7 16.30 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzm55b18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzm55b20 * 19.6 20.40 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzm55b22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzm55b24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzm55b27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzm55b30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzm55b33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzm55b36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzm55b39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 < 5 30 bzm55b43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzm55b47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzm55b51 * 50 52.0 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzm55b56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzm55b62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzm55b68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzm55b75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
www.vishay.com 4 document number 85597 rev. 2.0, 26-aug-10 bzm55-series vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. total power dissipati on vs. ambient temperature figure 2. typical change of work ing voltage under operating conditions at t amb =25c figure 3. temperature coeffi cient of vz vs. z-voltage 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 8 0 40 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 959 8 t j = 25 c i z = 5 ma 0 5 - 5 0 5 10 15 v z - z- v oltage ( v ) 95 9600 i z = 5 ma 0 10 203040 50 tk v z - temperat u re coefficient of v z (10 -4 /k) figure 4. diode capacitance vs. z-voltage figure 5. typical change of working voltage vs. junction temperature figure 6. forward current vs. forward voltage 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ztn - relative voltage change t j - junction temperature (c) 240 95 9599 0 v ztn = v zt /v z (25 c) 0 tk vz = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k 0 0.2 0.4 0.6 0. 8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c
bzm55-series document number 85597 rev. 2.0, 26-aug-10 vishay semiconductors www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 7. z-current vs. z-voltage figure 8. z-current vs. z-voltage figure 9. differential z- resistance vs. z-voltage 8 20 95 9604 0 20 40 60 8 0 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c 0 101520 1 10 100 1000 25 95 9606 t j = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance ( ) 5 figure 10. board for r thja definition (in mm) figure 11. recommended foot pads (in mm) figure 12. recommended foot pads (in mm) 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 1.2 0. 8 2.4 0. 8 0. 8 16773 reflo w soldering 1.4 1.0 2. 8 0.9 0.9 w a v e soldering 16774
www.vishay.com 6 document number 85597 rev. 2.0, 26-aug-10 bzm55-series vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): micromelf figure 13. thermal response 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t jmax - t am b i zm = (- v z + ( v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj ) cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1. 8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.09 8 ) < 1.35 (0.053) 0.6 (0.024) foot print recommendation: reflo w soldering w a v e soldering 2.4 (0.094) 2. 8 (0.110) 0. 8 (0.031) 0. 8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0. 8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap b et w een pl u g and glass can b e either on cathode or anode side
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