to-247-2l ? IQBD30E120A1 pb free plating product IQBD30E120A1 30.0 ampere switchmode single fast recovery epitaxial diode pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature IQBD30E120A1 using the lastest fred fab process(planar passivation pellet) with ultrafast and soft recovery characteristic. rev.05 absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 12 00 v v maximum repetitive reverse voltage rrm 12 00 v i average forward current f(av) t c 30 = 110 c a i rms forward current f(rms) t c 42 =110 c a i non - repetitive surge forward current fsm t j 30 0 = 45 c , t=10ms, 50hz, sine a p power dissipation d 115 w t junction temperature j - 40 to +150 c t storage temperature range stg - 40 to +1 50 c torqu e module - to - sink recommended m 3 1. 1 n m r thermal resistance jc junction - to - case 1. 1 c /w weight 7 .0 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- = 12 00 v -- 100 a v r = 12 00 v, t j -- = 1 25 c -- 1 m a v forward voltage f i f -- = 30 a 2.15 2.5 v i f = 30 a , t j -- = 125 c 1.75 -- v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 30 -- ns t reverse recovery time r r v r = 6 00 v, i f = 30 a di f /dt= - 2 00a/s, t j - - =25 c 16 0 -- ns i max. reverse recovery current rrm -- 5 -- a t reverse recovery time r r v r = 6 00 v, i f = 30 a di f /dt= - 2 00a/s, t j -- =125 c 3 0 0 -- ns i max. reverse recovery current rrm -- 11 -- a
. . . ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05 i f (a) v f v fig1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 6 0 4 0 3 0 2 0 1 0 0 0 0. 5 1.0 2.0 2.5 3.0 di f /dt a/ s fig 2 . reverse recovery time vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 10 0 t rr ( ns ) 2 0 0 30 0 4 0 0 50 0 v r = 6 00 v t j =1 25 c i f = 6 0 a i rrm (a) di f /dt a/ s fig 3 . reverse recovery current vs di f /dt 50 4 0 30 2 0 10 0 0 200 400 600 800 1000 di f /dt a/ s fig 4 . reverse recovery charge vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 1 q rr ( c ) 2 3 4 v r = 6 00 v t j =1 25 c i f = 6 0a i f = 1 5a v r = 6 00 v t j =1 25 c i f = 6 0a i f = 30 a i f = 15 a k f 0 0. 2 0. 4 1. 4 0 .6 1 0 1 10 - 1 10 - 2 10 - 3 z thjc (k/w) 0.8 i rrm q rr t rr t j ( c ) fig 5 . dynamic parameters vs junction temperature 0 25 50 1 00 1 50 1 10 - 1 10 - 2 10 - 3 10 - 4 rectangular pulse duration (seconds) fig 6 . transient thermal impedance 75 125 1.5 1 .2 5 50 duty 0.5 0.2 0.1 0.05 single p ulse i f = 30 a i f = 15 a i f = 30 a 1.0 ? IQBD30E120A1
ejector pin hole thickne ss (h) d c1 a a1 b1 b e c l h l2 e1 e2 l1 ? symbol dimensions in millimeters dimensions in inches min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref. 0.138 ref. e2 3.600 ref. 0.142 ref. l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 ? 7.100 7.300 0.280 0.287 e 10.900 typ. 0.429 typ. h 5.980 typ. 0.235 typ. h 0.000 0.300 0.000 0.012 to-247-2l dimensions ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05 fig 7 . diode reverse recovery t est circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm ? IQBD30E120A1
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