ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 1 of 6 6b18n-rev.f001 description the ec736014 is a new generation of middle voltage and high current nCchannel enhancement mode trench power mosfet. this new technology increases the device re liability and electrical parameter repeatability. e c736014 is assembled in high reliability and qualified assembly house. features and benefits advanced trench process technology avalanche energy, 100% test fully characterized avalanche voltage and current application power switching application absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 60 i d @tc= 100? c continuous drain current,v gs @10v 42 i dm pulsed drain current 240 a p d @t c = 25? c power dissipation 115 w p d @t c = 25? c linear derating factor 0.74 w/ c? v gs gate-to-source voltage 20 v e as single pulse avalanche energy 235 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C55 to +175 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case 1.31 r ja junction-to-ambient 62 /w
ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 2 of 6 6b18n-rev.f001 electrical characteristics @tj=25 ? c (unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 60 v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance 12 14 m v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a gfs forward transconductance 60 s v ds =5v,i d =30a 2 a v ds =60v,v gs =0v i dss drain-to-source leakage current 10 a v ds =60v, v gs =0v,t j = 150? c gate-to-source forward leakage 100 na v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v qg total gate charge 45 i d =30a qgs gate-to-source charge 4 v dd =30v qgd gate-to-drain("miller") charge 15 nc v gs =10v t d(on) turn-on delay time 14.6 v dd =30v tr rise time 14.2 i d =2a ,r l =15 t d(off) turn-off delay time 40 r g =2.5 tf fall time 7.3 ns v gs =10v ciss input capacitance 1480 v gs =0v coss output capacitance 190 v ds =25v crss reverse transfer capacitance 135 pf f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 60 i sm pulsed source current (body diode) 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v t j = 25? c,i s =40a,v gs =0v trr reverse recovery time 33 ns qrr reverse recovery charge 61 nc t j = 25? c,i f =60a di/dt=100a/ s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is do minated by ls + ld) notes: repetitive rating; pulse width limited by max junc tion temperature. test condition: l =0.3mh, vdd = 30v,id=37a pulse width 300 s, duty cycle 1.5% ; rg = 25 ?? starting tj = 25c
ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 3 of 6 6b18n-rev.f001
ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 4 of 6 6b18n-rev.f001
ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 5 of 6 6b18n-rev.f001 ordering and marking information ec736014 x x part number package marking marking information EC736014AT to220 to220 a t tube
ec 73 6014 60 v 60 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 6 of 6 6b18n-rev.f001 package outline dimension
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