t o ? 126 1. emitter 2. col lector 3. base jiangsu changjiang ele ctron ics technology co., ltd t o-126 plastic-encapsulate transistors ksb1 151 transist or (pnp) features z low collector-emitter saturation voltage z large collector current z high power dissipation z complement to ksd1691 maximum ratings (t a =25 unless other wise noted) symbol para meter value unit v cbo coll ector-base voltage -60 v v ce o coll ector-emitter voltage -60 v v eb o emitter-base v oltage -7 v i c coll ector current -5 a p c coll ector power dissipation 1.25 w r ja t hermal resistance from junction to ambient 100 / w t j junctio n temperature 150 t st g s torage temperature -55~+150 www.cj-elec.com 1 d , aug ,201 7 equivalent circuit b1151 ,!- o . s olid dot = green moldi ng compou nd dev ic e, if none, the norm al device ///, ode xxx ordering informa t ion part number package packing method pack quantity KSB1151 to-126 bulk ks b1151 -tu to-126 tube b1151 60pcs/tube 200pcs/bag
parameter symbol test conditions min typ max unit co llector-base breakdown voltage v (b r)cbo i c = -100a,i e = 0 -60 v co llector-emitter breakdown voltage v (b r)ceo i c =-1 ma,i b = 0 -60 v emitter-b ase breakdown voltage v ( br)ebo i e = -100a,i c =0 -7 v co llector cut-off current i cb o v cb = -50v,i e = 0 -10 a emitter cut-off current i ebo v eb =-7 v,i c = 0 -10 a h fe(1) v ce =-1 v, i c = -2a 100 400 h fe(2) v ce =-1 v, i c = -0.1a 60 dc cu rrent gain h fe(3) v ce =-2 v, i c = -5a 50 co llector-emitter saturation voltage v ce (sat) i c =-2 a,i b =-0.2a -0.3 v bas e-emitter saturation voltage v be( sat) i c =-2 a,i b =-0.2a -1.2 v classifica tion of h fe(1) r ank o y g ra nge 100-200 160-320 200-400 a t =25 unless otherwise specified www.cj-elec.com 2 d , aug ,201 7
t y pical characteristics -0 .1 -1 -1 0 10 100 1000 10000 - 0 -100 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -1100 -1200 -1e-3 -0.01 -0.1 -1 0 25 50 75 100 125 150 0 250 500 750 1000 1250 1500 -0 .0 1 -0.1 -1 -0 -200 -400 -600 -800 -1000 -1200 -1400 -1600 -1800 -0 .0 1 -0.1 -1 -0 -50 -100 -150 -200 -250 -300 -350 -1 e -3 -0.01 -0.1 -1 10 100 1000 10000 -0 -1 -2 -3 -4 -5 -0 .0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 capacit ance c ( pf) reverse vo lt age v (v) c ob c ib f=1m hz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ? ? -3 0 t a =1 0 0 t a =2 5 collcetor current i c (a) base-emiter voltage v be (mv) i c v be com m on emitter v ce =-1v co llect or power dissipation p c (mw) am bient temperature t a ( ) p c ? ? t a ? ? base- emit ter saturation voltage v bes a t (mv) collector current i c (a) =10 t a =100 t a =25 i c v b e sat ?? collector-emitter saturation vo lt age v ce s at (mv) collector current i c (a) i c v c e sat ?? t a =100 t a =25 =10 -5 -5 -5 -5 dc current gain h fe collector current i c (a) com m on emitter v ce =-1v t a =25 t a =100 i c h fe ? ? - 20m a - 18m a - 16m a - 12m a - 10m a -8 .0 ma -6 .0 ma -4 .0 ma - 14m a i b =- 2. 0ma collector current i c (a) collector-em itter voltage v ce (v) c o mmon emitter t a =25 s t atic characteristic www.cj-elec.com 3 d,aug,2017
www.cj-elec.com 4 c , feb ,201 7 to-126 package outline dimensions min max min max a 2.500 2.900 0.098 0.114 a1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 d 7.400 7.800 0.291 0.307 e 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 l 15.300 15.700 0.602 0.618 l1 2.100 2.300 0.083 0.091 p 3.900 4.100 0.154 0.161 3.000 3.200 0.118 0.126 symbol dimensions in millimete rs dimensions in inches 2.290 typ 0.090 typ
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