copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 1 /6 SW7N60K2F absolute maximum ratings symbol parameter value unit v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 7* a continuous drain current (@t c =100 o c) 4.4* a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 160 mj e ar repetitive avalanche energy (note 1) 16 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 89 w derating factor above 25 o c 0.7 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 1.4 o c /w *. drain current is limited by junction temperature. 1. gate 2. drain 3. source order codes item sales type marking package packaging 1 sw d 7n60k2f SW7N60K2F to - 252 reel n - channel enhanced mode to - 252 mosfet features ? high ruggedness ? low r ds( on ) (t yp 0.43 ? )@v gs =10v ? low gate charge ( typ 13nc) ? improved dv/dt capability ? 100% avalanche tested ? application: led , adaptor, charge general description this power mosfet is produced with super junction advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. bv dss : 600v i d : 7a r ds(on) : 0.43? 1 2 3 to - 252 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 2 /6 SW7N60K2F electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.23 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 5 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 n a gate to source leakage current, reverse v gs = - 30v, v ds =0v - 100 n a on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d =3.5a 0.43 0.5 ? g fs forward transconductance v ds =30v, i d =3.5a 4.5 s dynamic characteristics c iss input capacitance v gs =0v, v ds =200v, f=1mhz 597 pf c oss output capacitance 34 c rss reverse transfer capacitance 11 t d(on) turn on delay time v ds =300v, i d =7a, r g =25?, v gs =10v (note 4,5) 19 ns t r rising time 26 t d(off) turn off delay time 33 t f fall time 21 q g total gate charge v ds =480v, v gs =10v, i d =7a (note 4,5) 13 nc q gs gate - source charge 4.9 q gd gate - drain charge 5 r g gate resistance v ds =0v, scan f mode 1.8 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7a, v gs =0v 1.4 v t rr reverse recovery time i s =7a, v gs =0v, di f /dt=100a/us 92 ns q rr reverse recovery charge 319 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =80mh, i as =2a, v dd =50v, r g =25?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 3 /6 SW7N60K2F fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 4. on - state current vs. diode forward voltage fig. 3. on - resistance variation vs. drain current and gate voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on - resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 4 /6 SW7N60K2F fig. 9 . maximum safe operating area fig. 7. gate charge characteristics fig. 8. c apacitance characteristics fig. 10. transient thermal response curve
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 5 /6 SW7N60K2F v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 12 . switching time test circuit & waveform fig. 11. gate charge test circuit & waveform fig. 13 . unclamped inductive switching test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2016. rev. 2.0 6 /6 SW7N60K2F disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 14 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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