APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 1 C 6 11 cr1 q2 10 9 12 ntc 12 34 6 5 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 1200 v t c = 25c 31 i d continuous drain current t c = 80c 23 i dm pulsed drain current 195 a v gs gate - source voltage 30 v r dson drain - source on resistance 360 m ? p d maximum power dissipation t c = 25c 657 w i ar avalanche current (repetitive and non repetitive) 25 a application ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? power mos 8? mosfet - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant boost chopper mosfet + sic chopper diode p ower module v dss = 1200v r dson = 300m ? typ @ tj = 25c i d = 31a @ tc = 25c downloaded from: http:///
APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 2 C 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 100 i dss zero gate voltage drain current v ds =1200v v gs = 0v t j = 125c 500 a r ds(on) drain C source on resistance v gs = 10v, i d = 25a 300 360 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate C source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 14560 c oss output capacitance 1340 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 172 pf q g total gate charge 560 q gs gate C source charge 90 q gd gate C drain charge v gs = 10v v bus = 600v i d = 25a 265 nc t d(on) turn-on delay time 100 t r rise time 60 t d(off) turn-off delay time 315 t f fall time resistive switching @ 25c v gs = 15v v bus = 800v i d = 25a r g = 2.2 ? 90 ns sic chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 64 400 i rm maximum reverse leakage current v r =1200v t j = 175c 112 2000 a i f dc forward current tc = 100c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2.3 3 v q c total capacitive charge i f = 20a, v r = 600v di/dt =1000a/s 80 nc f = 1mhz, v r = 200v 192 c total capacitance f = 1mhz, v r = 400v 138 pf thermal and package characteristics symbol characteristic min typ max unit transistor 0.19 r thjc junction to case thermal resistance sic diode 1 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 80 g downloaded from: http:///
APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 3 C 6 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single p ulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs p ulse duration t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 4 C 6 low voltage output characteristics t j =25c t j =125c 0 20 40 60 80 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 4.5v 5v 0 10 20 30 40 50 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =6, 7, 8 & 9v t j =125c normalized r ds(on) vs. temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 t j , junction temperature (c) r dson , drain to source on resistance v gs =10v i d =25a transfert characteristics t j =25c t j =125c 0 10 20 30 40 0123456 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d(on) xr ds(on) max 250s pulse test @ < 0.5 duty cycle gate charge vs gate to source v ds =240v v ds =600v v ds =960v 0 2 4 6 8 10 12 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage i d =25a t j =25c ciss crss coss 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage downloaded from: http:///
APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 5 C 6 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r reverse voltage c, capacitance (pf) downloaded from: http:///
APTM120DA30CT1G APTM120DA30CT1G C rev1 october, 2012 www.microsemi.com 6 C 6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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